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Gillin, W. P. (1999) Effect of strain on the interdiffusion of InGaAs/GaAs heterostructures. Journal of Applied Physics, 85 (2). 790-793 doi:10.1063/1.369160

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Reference TypeJournal (article/letter/editorial)
TitleEffect of strain on the interdiffusion of InGaAs/GaAs heterostructures
JournalJournal of Applied Physics
AuthorsGillin, W. P.Author
Year1999 (January 15)Volume85
Issue2
PublisherAIP Publishing
DOIdoi:10.1063/1.369160Search in ResearchGate
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Mindat Ref. ID5094823Long-form Identifiermindat:1:5:5094823:1
GUID0
Full ReferenceGillin, W. P. (1999) Effect of strain on the interdiffusion of InGaAs/GaAs heterostructures. Journal of Applied Physics, 85 (2). 790-793 doi:10.1063/1.369160
Plain TextGillin, W. P. (1999) Effect of strain on the interdiffusion of InGaAs/GaAs heterostructures. Journal of Applied Physics, 85 (2). 790-793 doi:10.1063/1.369160
In(1999, January) Journal of Applied Physics Vol. 85 (2) AIP Publishing

See Also

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Khreis, O. M., Homewood, K. P., Gillin, W. P. (1998) Interdiffusion in InGaAs/GaAs: The effect of growth conditions. Journal of Applied Physics, 84 (1). 232-236 doi:10.1063/1.368079
Gillin, W. P., Dunstan, D. J., Homewood, K. P., Howard, L. K., Sealy, B. J. (1993) Interdiffusion in InGaAs/GaAs quantum well structures as a function of depth. Journal of Applied Physics, 73 (8). 3782-3786 doi:10.1063/1.352884
Bollet, F., Gillin, W. P., Hopkinson, M., Gwilliam, R. (2005) Concentration dependent interdiffusion in InGaAs∕GaAs as evidenced by high resolution x-ray diffraction and photoluminescence spectroscopy. Journal of Applied Physics, 97 (1). 13536pp. doi:10.1063/1.1825613
Bollet, F., Gillin, W. P. (2003) Photoluminescence and x-ray diffraction studies of the diffusion behavior of lattice matched InGaAs/InP heterostructures. Journal of Applied Physics, 94 (2). 988-992 doi:10.1063/1.1586975
Wee, S. F., Chai, M. K., Homewood, K. P., Gillin, W. P. (1997) The activation energy for GaAs/AlGaAs interdiffusion. Journal of Applied Physics, 82 (10). 4842-4846 doi:10.1063/1.366345
Ryu, Sang‐Wan, Kim, In, Choe, Byung‐Doo, Jeong, Weon Guk (1995) The effect of strain on the interdiffusion in InGaAs/GaAs quantum wells. Applied Physics Letters, 67 (10). 1417-1419 doi:10.1063/1.114512
Gillin, W. P., Perrin, S. D., Homewood, K. P. (1995) Comparative study of silicon nitride encapsulated and phosphine overpressure annealing on the interdiffusion of InxGa1−xAs‐InxGa1−xAsyP1−y heterostructures. Journal of Applied Physics, 77 (4). 1463-1465 doi:10.1063/1.358893
Bollet, F., Gillin, W. P. (2007) Characterization of interdiffusion around miscibility gap of lattice matched InGaAs∕InP quantum wells by high resolution x-ray diffraction. Journal of Applied Physics, 101 (1). 13502pp. doi:10.1063/1.2404784
Bradley, I. V., Gillin, W. P., Homewood, K. P., Webb, R. P. (1993) The effects of ion implantation on the interdiffusion coefficients in InxGa1−xAs/GaAs quantum well structures. Journal of Applied Physics, 73 (4). 1686-1692 doi:10.1063/1.353204
Gillin, W. P., Dunstan, D. J. (1994) Strain and interdiffusion in semiconductor heterostructures. Physical Review B, 50 (11) 7495-7498 doi:10.1103/physrevb.50.7495
Gillin, W. P., Bradley, I. V., Howard, L. K., Gwilliam, R., Homewood, K. P. (1993) The effects of silicon and beryllium on the interdiffusion of GaAs/ AlxGa1−xAs and InxGa1−xAs/GaAs quantum well structures. Journal of Applied Physics, 73 (11). 7715-7719 doi:10.1063/1.353969
 
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