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Finnie, P., Charbonneau, S., Buchanan, M., Lacelle, C., Fraser, J., Roth, A. P. (1997) Faceted GaInAs/InP nanostructures grown by selective area chemical beam epitaxy. Journal of Applied Physics, 82 (10). 4883-4888 doi:10.1063/1.366351

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Reference TypeJournal (article/letter/editorial)
TitleFaceted GaInAs/InP nanostructures grown by selective area chemical beam epitaxy
JournalJournal of Applied Physics
AuthorsFinnie, P.Author
Charbonneau, S.Author
Buchanan, M.Author
Lacelle, C.Author
Fraser, J.Author
Roth, A. P.Author
Year1997 (November 15)Volume82
Issue10
PublisherAIP Publishing
DOIdoi:10.1063/1.366351Search in ResearchGate
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Mindat Ref. ID5087306Long-form Identifiermindat:1:5:5087306:1
GUID0
Full ReferenceFinnie, P., Charbonneau, S., Buchanan, M., Lacelle, C., Fraser, J., Roth, A. P. (1997) Faceted GaInAs/InP nanostructures grown by selective area chemical beam epitaxy. Journal of Applied Physics, 82 (10). 4883-4888 doi:10.1063/1.366351
Plain TextFinnie, P., Charbonneau, S., Buchanan, M., Lacelle, C., Fraser, J., Roth, A. P. (1997) Faceted GaInAs/InP nanostructures grown by selective area chemical beam epitaxy. Journal of Applied Physics, 82 (10). 4883-4888 doi:10.1063/1.366351
In(1997, November) Journal of Applied Physics Vol. 82 (10) AIP Publishing

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Finnie, P., Buchanan, M., Lacelle, C., Roth, A.P. (1996) Growth of quantum wire structures by selective area chemical beam epitaxy. Journal of Crystal Growth, 160 (3). 220-228 doi:10.1016/0022-0248(95)00749-0
Rao, T. Sudersena, Lacelle, C., Benzaquen, R., Rolfe, S. J., Charbonneau, S., Berger, P. D., Roth, A. P., Steiner, T., Thewalt, M. L. W. (1994) Electrical, optical properties, and surface morphology of high purity InP grown by chemical beam epitaxy. Journal of Applied Physics, 76 (9). 5300-5308 doi:10.1063/1.357181
Benzaquen, R., Benzaquen, M., Charbonneau, S., Poole, P. J., Rao, T. Sudersena, Lacelle, C., Roth, A. P., Leonelli, R. (1994) Evidence from electrical transport and photoluminescence spectroscopy of a band of localized deep donors in high-purityn-type InP grown by chemical-beam epitaxy. Physical Review B, 50 (23) 16964-16972 doi:10.1103/physrevb.50.16964
Temkin, H., Panish, M. B., Petroff, P. M., Hamm, R. A., Vandenberg, J. M., Sumski, S. (1985) GaInAs(P)/InP quantum well structures grown by gas source molecular beam epitaxy. Applied Physics Letters, 47 (4). 394-396 doi:10.1063/1.96178
Rao, T. Sudersena, Lacelle, C., Rolfe, S. J., Dion, M., Thompson, J., Marshall, P., Chow‐Chong, P., Ross, D., Davies, M., Roth, A. P. (1994) Chemical beam epitaxy growth of 1.3 μm InGaAsP/InP double heterostructure lasers using all gas source doping. Applied Physics Letters, 65 (8). 1015-1017 doi:10.1063/1.112210
Palmstro/m, C. J., Van der Gaag, B. P., Song, J.‐I., Hong, W.‐P., Schwarz, S. A., Novak, S. (1994) Growth of heavy carbon‐doped GaInAs lattice matched to InP by chemical beam epitaxy. Applied Physics Letters, 64 (23). 3139-3141 doi:10.1063/1.111344
Galeuchet, Y. D., Roentgen, P., Graf, V. (1990) GaInAs/InP selective area metalorganic vapor phase epitaxy for one‐step‐grown buried low‐dimensional structures. Journal of Applied Physics, 68 (2). 560-568 doi:10.1063/1.346829
Vandenberg, J. M., Hamm, R. A., Macrander, A. T., Panish, M. B., Temkin, H. (1986) Structural characterization of GaInAs(P)/InP quantum well structures grown by gas source molecular beam epitaxy. Applied Physics Letters, 48 (17). 1153-1155 doi:10.1063/1.96454
Lin, S. D., Lin, Z. C., Lee, C. P. (2006) Transmission electron microscopy studies of GaAs nanostructures in InGaAs∕InP matrix grown by molecular beam epitaxy. Journal of Applied Physics, 100 (5). 54312pp. doi:10.1063/1.2345031
Panish, M. B., Temkin, H., Hamm, R. A., Chu, S. N. G. (1986) Optical properties of very thin GaInAs(P)/InP quantum wells grown by gas source molecular beam epitaxy. Applied Physics Letters, 49 (3). 164-166 doi:10.1063/1.97212
Aina, O., Serio, M., Mattingly, M., O’Connor, J., Shastry, S. K., Hill, D. S., Salerno, J. P., Ferm, P. (1991) High‐speed InP/GaInAs heterojunction phototransistor on InP‐on‐Si grown by organometallic vapor phase epitaxy. Applied Physics Letters, 59 (3). 268-270 doi:10.1063/1.105617
 
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