Watch the Dallas Symposium LIVE, and fundraiser auction
Ticket proceeds support mindat.org! - click here...
Log InRegister
Quick Links : The Mindat ManualThe Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
Home PageAbout MindatThe Mindat ManualHistory of MindatCopyright StatusWho We AreContact UsAdvertise on Mindat
Donate to MindatCorporate SponsorshipSponsor a PageSponsored PagesMindat AdvertisersAdvertise on Mindat
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
Minerals by PropertiesMinerals by ChemistryAdvanced Locality SearchRandom MineralRandom LocalitySearch by minIDLocalities Near MeSearch ArticlesSearch GlossaryMore Search Options
Search For:
Mineral Name:
Locality Name:
Keyword(s):
 
The Mindat ManualAdd a New PhotoRate PhotosLocality Edit ReportCoordinate Completion ReportAdd Glossary Item
Mining CompaniesStatisticsUsersMineral MuseumsClubs & OrganizationsMineral Shows & EventsThe Mindat DirectoryDevice SettingsThe Mineral Quiz
Photo SearchPhoto GalleriesSearch by ColorNew Photos TodayNew Photos YesterdayMembers' Photo GalleriesPast Photo of the Day GalleryPhotography

Parry, C. P., Whall, T. E., Parker, E. H. C. (1997) Structural and electrical properties of p+n junctions in Si by low energy Ga+ implantation. Journal of Applied Physics, 82 (10). 4990-4993 doi:10.1063/1.366367

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleStructural and electrical properties of p+n junctions in Si by low energy Ga+ implantation
JournalJournal of Applied Physics
AuthorsParry, C. P.Author
Whall, T. E.Author
Parker, E. H. C.Author
Year1997 (November 15)Volume82
Issue10
PublisherAIP Publishing
DOIdoi:10.1063/1.366367Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5087337Long-form Identifiermindat:1:5:5087337:1
GUID0
Full ReferenceParry, C. P., Whall, T. E., Parker, E. H. C. (1997) Structural and electrical properties of p+n junctions in Si by low energy Ga+ implantation. Journal of Applied Physics, 82 (10). 4990-4993 doi:10.1063/1.366367
Plain TextParry, C. P., Whall, T. E., Parker, E. H. C. (1997) Structural and electrical properties of p+n junctions in Si by low energy Ga+ implantation. Journal of Applied Physics, 82 (10). 4990-4993 doi:10.1063/1.366367
In(1997, November) Journal of Applied Physics Vol. 82 (10) AIP Publishing

See Also

These are possibly similar items as determined by title/reference text matching only.

Braithwaite, G., Mattey, N. L., Parker, E. H. C., Whall, T. E., Brunthaler, G., Bauer, G. (1997) Hot hole energy relaxation in Si/Si0.8Ge0.2 two dimensional hole gases. Journal of Applied Physics, 81 (10). 6853-6856 doi:10.1063/1.365244
Knights, A. P., Gwilliam, R. M., Sealy, B. J., Grasby, T. J., Parry, C. P., Fulgoni, D. J. F., Phillips, P. J., Whall, T. E., Parker, E. H. C., Coleman, P. G. (2001) Growth temperature dependence for the formation of vacancy clusters in Si/Si0.64Ge0.36/Si structures. Journal of Applied Physics, 89 (1). 76-79 doi:10.1063/1.1329145
Sadeghzadeh, M. A., Parry, C. P., Phillips, P. J., Parker, E. H. C., Whall, T. E. (1999) Issues on the molecular-beam epitaxial growth of p-SiGe inverted-modulation-doped structures. Applied Physics Letters, 74 (4). 579-581 doi:10.1063/1.123151
Nicholas, G., Grasby, T. J., Parker, E. H. C., Whall, T. E., Skotnicki, T. (2005) Impact ionization in strained Si devices. Journal of Applied Physics, 98 (10). 104502pp. doi:10.1063/1.2136210
Grasby, T. J., Parry, C. P., Phillips, P. J., McGregor, B. M., Morris,, R. J. H., Braithwaite, G., Whall, T. E., Parker, E. H. C., Hammond, R., Knights, A. P., Coleman, P. G. (1999) Technique for producing highly planar Si/SiO0.64Ge0.36/Si metal–oxide–semiconductor field effect transistor channels. Applied Physics Letters, 74 (13). 1848-1850 doi:10.1063/1.123689
Parry, C. P., Kubiak, R. A., Newstead, S. M., Whall, T. E., Parker, E. H. C. (1992) Temperature dependence of incorporation processes during heavy boron doping in silicon molecular beam epitaxy. Journal of Applied Physics, 71 (1). 118-125 doi:10.1063/1.351363
Mattey, N. L., Dowsett, M. G., Parker, E. H. C., Whall, T. E., Taylor, S., Zhang, J. F. (1990) p‐type delta‐doped layers in silicon: Structural and electronic properties. Applied Physics Letters, 57 (16). 1648-1650 doi:10.1063/1.104076
Mei, P., Jalali, B., Yang, E. S., Stoffel, N. G., Hart, D. L. (1990) Electrical and structural properties of shallowp+junctions formed by dual (Ga/B) ion implantation. Applied Physics Letters, 56 (14). 1362-1364 doi:10.1063/1.102515
Parry, C. P., Newstead, S. M., Barlow, R. D., Augustus, P., Kubiak, R. A. A., Dowsett, M. G., Whall, T. E., Parker, E. H. C. (1991) Elemental boron doping behavior in silicon molecular beam epitaxy. Applied Physics Letters, 58 (5). 481-483 doi:10.1063/1.104614
Myronov, M., Phillips, P. J., Whall, T. E., Parker, E. H. C. (2002) Hall mobility enhancement caused by annealing of Si0.2Ge0.8/Si0.7Ge0.3/Si(001) p-type modulation-doped heterostructures. Applied Physics Letters, 80 (19). 3557-3559 doi:10.1063/1.1478779
Lander, R. J. P., Emeleus, C. J., McGregor, B. M., Parker, E. H. C., Whall, T. E., Evans, A. G. R., Kennedy, G. P. (1997) Study of Hall and effective mobilities in pseudomorphic Si1−xGex p-channel metal–oxide–semiconductor field-effect transistors at room temperature and 4.2 K. Journal of Applied Physics, 82 (10). 5210-5216 doi:10.1063/1.366385
 
and/or  
Mindat.org is an outreach project of the Hudson Institute of Mineralogy, a 501(c)(3) not-for-profit organization.
Copyright © mindat.org and the Hudson Institute of Mineralogy 1993-2025, except where stated. Most political location boundaries are © OpenStreetMap contributors. Mindat.org relies on the contributions of thousands of members and supporters. Founded in 2000 by Jolyon Ralph.
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
Privacy Policy - Terms & Conditions - Contact Us / DMCA issues - Report a bug/vulnerability Current server date and time: August 23, 2025 08:37:50
Go to top of page