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Mizuno, Tomohisa, Ohba, Ryuji (1997) Experimental study of nonstationary electron transport in sub-0.1 μm metal–oxide–silicon devices: Velocity overshoot and its degradation mechanism. Journal of Applied Physics, 82 (10). 5235-5240 doi:10.1063/1.366389

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Reference TypeJournal (article/letter/editorial)
TitleExperimental study of nonstationary electron transport in sub-0.1 μm metal–oxide–silicon devices: Velocity overshoot and its degradation mechanism
JournalJournal of Applied Physics
AuthorsMizuno, TomohisaAuthor
Ohba, RyujiAuthor
Year1997 (November 15)Volume82
Issue10
PublisherAIP Publishing
DOIdoi:10.1063/1.366389Search in ResearchGate
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Mindat Ref. ID5087382Long-form Identifiermindat:1:5:5087382:1
GUID0
Full ReferenceMizuno, Tomohisa, Ohba, Ryuji (1997) Experimental study of nonstationary electron transport in sub-0.1 μm metal–oxide–silicon devices: Velocity overshoot and its degradation mechanism. Journal of Applied Physics, 82 (10). 5235-5240 doi:10.1063/1.366389
Plain TextMizuno, Tomohisa, Ohba, Ryuji (1997) Experimental study of nonstationary electron transport in sub-0.1 μm metal–oxide–silicon devices: Velocity overshoot and its degradation mechanism. Journal of Applied Physics, 82 (10). 5235-5240 doi:10.1063/1.366389
In(1997, November) Journal of Applied Physics Vol. 82 (10) AIP Publishing

See Also

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Mizuno, Tomohisa, Ohba, Ryuji, Ohuchi, Kazuya (1996) Velocity overshoot greater than 107 cm/s at room temperature in sub‐0.1‐μm silicon‐on‐insulator devices. Applied Physics Letters, 69 (1). 106-108 doi:10.1063/1.118089
Ohba, Ryuji, Mizuno, Tomohisa (1997) Experimental Analysis of Velocity Overshoot Degradation in Sub-0.1 µm Fully-Depleted SOI-MOSFETs. Japanese Journal of Applied Physics, 36. 1543-1547 doi:10.1143/jjap.36.1543
Ohuchi, Kazuya, Ohba, Ryuji, Niiyama, Hiromi, Nakajima, Kazuaki, Mizuno, Tomohisa (1996) A High-Performance 0.05 µm SOI MOS FET: Possibility of Velocity Overshoot. Japanese Journal of Applied Physics, 35. 960-964 doi:10.1143/jjap.35.960
Kuo, James B., Chang, Yao-Wen, Chen, Yu-Guang (1996) An Analytical Velocity Overshoot Model for 0.1 µm N-Channel Metal-Oxide-Silicon Devices Considering Energy Transport. Japanese Journal of Applied Physics, 35. 2573-2577 doi:10.1143/jjap.35.2573
Mizuno, Tomohisa, Moriyama, Yoshihiko, Tezuka, Tsutomu, Sugiyama, Naoharu, Takagi, Shin-ichi (2011) Single Source Heterojunction Metal–Oxide–Semiconductor Transistors for Quasi-Ballistic Devices: Optimization of Source Heterostructures and Electron Velocity Characteristics at Low Temperature. Japanese Journal of Applied Physics, 50. 10107 doi:10.1143/jjap.50.010107
Mizuno, Tomohisa, Moriyama, Yoshihiko, Tezuka, Tsutomu, Sugiyama, Naoharu, Takagi, Shin-ichi (2011) Single Source Heterojunction Metal–Oxide–Semiconductor Transistors for Quasi-Ballistic Devices: Optimization of Source Heterostructures and Electron Velocity Characteristics at Low Temperature. Japanese Journal of Applied Physics, 50 (1) 10107 doi:10.7567/jjap.50.010107
Mizuno, Tomohisa, Toriumi, Akira (1995) Experimental evidence for statistical‐inhomogeneous distributed dopant atoms in a Si metal‐oxide‐semiconductor field‐effect transistor. Journal of Applied Physics, 77 (7). 3538-3540 doi:10.1063/1.358581
Yamada, Hiroshi (1997) Density of ultradry ultrathin silicon oxide films and its correlation with reliability. Journal of Applied Physics, 82 (10). 4916-4922 doi:10.1063/1.366357
Mizuno, Tomohisa, Tobe, Keisuke, Maruyama, Yohichi, Sameshima, Toshiyuki (2012) Experimental Study of Silicon Monolayers for Future Extremely Thin Silicon-on-Insulator Devices: Phonon/Band Structures Modulation Due to Quantum Confinement Effects. Japanese Journal of Applied Physics, 51 (2) 2 doi:10.1143/jjap.51.02bc03
Mizuno, Tomohisa, Tobe, Keisuke, Maruyama, Yohichi, Sameshima, Toshiyuki (2012) Experimental Study of Silicon Monolayers for Future Extremely Thin Silicon-on-Insulator Devices: Phonon/Band Structures Modulation Due to Quantum Confinement Effects. Japanese Journal of Applied Physics, 51 (2) 2 doi:10.7567/jjap.51.02bc03
Ghis, A., Constant, E., Boittiaux, B. (1983) Ballistic and overshoot electron transport in bulk semiconductors and in submicronic devices. Journal of Applied Physics, 54 (1). 214-221 doi:10.1063/1.331744
 
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