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Trassoudaine, A., Siozade, L., Aujol, E., Cadoret, R., Castelluci, D., Vasson, A. (2002) Thickness Influence on Optical and Morphological Properties of HVPE GaN Layers Grown on MOCVD GaN Layers. physica status solidi (a), 190 (1). 53-58 doi:10.1002/1521-396x(200203)190:1<53::aid-pssa53>3.0.co;2-e

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Reference TypeJournal (article/letter/editorial)
TitleThickness Influence on Optical and Morphological Properties of HVPE GaN Layers Grown on MOCVD GaN Layers
Journalphysica status solidi (a)
AuthorsTrassoudaine, A.Author
Siozade, L.Author
Aujol, E.Author
Cadoret, R.Author
Castelluci, D.Author
Vasson, A.Author
Year2002 (March)Volume190
Issue1
PublisherWiley
DOIdoi:10.1002/1521-396x(200203)190:1<53::aid-pssa53>3.0.co;2-eSearch in ResearchGate
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Mindat Ref. ID5087672Long-form Identifiermindat:1:5:5087672:1
GUID0
Full ReferenceTrassoudaine, A., Siozade, L., Aujol, E., Cadoret, R., Castelluci, D., Vasson, A. (2002) Thickness Influence on Optical and Morphological Properties of HVPE GaN Layers Grown on MOCVD GaN Layers. physica status solidi (a), 190 (1). 53-58 doi:10.1002/1521-396x(200203)190:1<53::aid-pssa53>3.0.co;2-e
Plain TextTrassoudaine, A., Siozade, L., Aujol, E., Cadoret, R., Castelluci, D., Vasson, A. (2002) Thickness Influence on Optical and Morphological Properties of HVPE GaN Layers Grown on MOCVD GaN Layers. physica status solidi (a), 190 (1). 53-58 doi:10.1002/1521-396x(200203)190:13.0.co;2-e
In(2002, March) physica status solidi (a) Vol. 190 (1) Wiley

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Trassoudaine, A., Aujol, E., Disseix, P., Castelluci, D., Cadoret, R. (1999) Experimental and Theoretical Study of the Growth of GaN on Sapphire by HVPE. physica status solidi (a), 176 (1). 425-428 doi:10.1002/(sici)1521-396x(199911)176:1<425::aid-pssa425>3.0.co;2-q
Kvietkova, J., Siozade, L., Disseix, P., Vasson, A., Leymarie, J., Damilano, B., Grandjean, N., Massies, J. (2002) Optical Investigations and Absorption Coefficient Determination of InGaN/GaN Quantum Wells. physica status solidi (a), 190 (1). 135-140 doi:10.1002/1521-396x(200203)190:1<135::aid-pssa135>3.0.co;2-1
Darakchieva, V., Birch, J., Paskov, P.P., Tungasmita, S., Paskova, T., Monemar, B. (2002) Strain Evolution in High Temperature AlN Buffer Layers for HVPE-GaN Growth. physica status solidi (a), 190 (1). 59-64 doi:10.1002/1521-396x(200203)190:1<59::aid-pssa59>3.0.co;2-f
Cadoret, R., Trassoudaine, A., Aujol, E. (2001) Computed Growth Rates of (001) GaN Substrates in the Hydride Vapour Phase Method. physica status solidi (a), 183 (1). 5-9 doi:10.1002/1521-396x(200101)183:1<5::aid-pssa5>3.0.co;2-k
Sacconi, F., Di Carlo, A., Lugli, P. (2002) Modeling of GaN-Based Resonant Tunneling Diodes: Influence of Polarization Fields. physica status solidi (a), 190 (1). 295-299 doi:10.1002/1521-396x(200203)190:1<295::aid-pssa295>3.0.co;2-a
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Kishino, K., Kikuchi, A. (2002) Improved Molecular Beam Epitaxy for Fabricating AlGaN/GaN Heterojunction Devices. physica status solidi (a), 190 (1). 23-31 doi:10.1002/1521-396x(200203)190:1<23::aid-pssa23>3.0.co;2-k
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