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du Plessis, Monuko, Aharoni, Herzl, Snyman, Lukas W. (2004) Two- and multi-terminal silicon light emitting devices in standard CMOS/BiCMOS IC technology. physica status solidi (a), 201 (10). 2225-2233 doi:10.1002/pssa.200404846

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Reference TypeJournal (article/letter/editorial)
TitleTwo- and multi-terminal silicon light emitting devices in standard CMOS/BiCMOS IC technology
Journalphysica status solidi (a)
Authorsdu Plessis, MonukoAuthor
Aharoni, HerzlAuthor
Snyman, Lukas W.Author
Year2004 (August)Volume201
Issue10
PublisherWiley
DOIdoi:10.1002/pssa.200404846Search in ResearchGate
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Mindat Ref. ID5089802Long-form Identifiermindat:1:5:5089802:4
GUID0
Full Referencedu Plessis, Monuko, Aharoni, Herzl, Snyman, Lukas W. (2004) Two- and multi-terminal silicon light emitting devices in standard CMOS/BiCMOS IC technology. physica status solidi (a), 201 (10). 2225-2233 doi:10.1002/pssa.200404846
Plain Textdu Plessis, Monuko, Aharoni, Herzl, Snyman, Lukas W. (2004) Two- and multi-terminal silicon light emitting devices in standard CMOS/BiCMOS IC technology. physica status solidi (a), 201 (10). 2225-2233 doi:10.1002/pssa.200404846
In(2004, August) physica status solidi (a) Vol. 201 (10) Wiley

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Snyman, Lukas W., Aharoni, Herzl, du Plessis, Monuko (1998) Characterization of breakdown phenomena in light emitting silicon n+p diodes. Journal of Applied Physics, 84 (5). 2953-2959 doi:10.1063/1.368401
Snyman, Lukas W., du Plessis, Monuko, Aharoni, Herzl (2007) Injection-Avalanche-Based n+pn Silicon Complementary Metal–Oxide–Semiconductor Light-Emitting Device (450–750 nm) with 2-Order-of-Magnitude Increase in Light Emission Intensity. Japanese Journal of Applied Physics, 46 (4) 2474-2480 doi:10.1143/jjap.46.2474
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Chen, Yanxu, Xu, Dongliang, Xu, Kaikai, Zhang, Ning, Liu, Siyang, Zhao, Jianming, Luo, Qian, Snyman, Lukas W, Swart, Jacobus W (2019) Optoelectronic properties analysis of silicon light-emitting diode monolithically integrated in standard CMOS IC. Chinese Physics B, 28. 107801pp. doi:10.1088/1674-1056/ab3e44
Zimmermann, W. (1972) Temperature dependence of carrier lifetime in silicon power devices. physica status solidi (a), 10 (1). doi:10.1002/pssa.2210100147
Xu, Kaikai, Snyman, Lukas W., Polleux, Jean-Luc, Aharoni, Herzl (2017) A CMOS Microdisplay Utilizing Hot Carrier Electroluminescence From Reverse-biased Si PN Junctions. Journal of Physics: Conference Series, 844. 12040pp. doi:10.1088/1742-6596/844/1/012040
Louren�o, M. A., Siddiqui, M. S. A., Shao, G., Gwilliam, R. M., Homewood, K. P. (2004) Ion beam fabricated silicon light emitting diodes. physica status solidi (a), 201 (2). 239-244 doi:10.1002/pssa.200303913
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