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Snyman, Lukas W., Aharoni, Herzl, du Plessis, Monuko (1998) Characterization of breakdown phenomena in light emitting silicon n+p diodes. Journal of Applied Physics, 84 (5). 2953-2959 doi:10.1063/1.368401

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Reference TypeJournal (article/letter/editorial)
TitleCharacterization of breakdown phenomena in light emitting silicon n+p diodes
JournalJournal of Applied Physics
AuthorsSnyman, Lukas W.Author
Aharoni, HerzlAuthor
du Plessis, MonukoAuthor
Year1998 (September)Volume84
Issue5
PublisherAIP Publishing
DOIdoi:10.1063/1.368401Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5093303Long-form Identifiermindat:1:5:5093303:5
GUID0
Full ReferenceSnyman, Lukas W., Aharoni, Herzl, du Plessis, Monuko (1998) Characterization of breakdown phenomena in light emitting silicon n+p diodes. Journal of Applied Physics, 84 (5). 2953-2959 doi:10.1063/1.368401
Plain TextSnyman, Lukas W., Aharoni, Herzl, du Plessis, Monuko (1998) Characterization of breakdown phenomena in light emitting silicon n+p diodes. Journal of Applied Physics, 84 (5). 2953-2959 doi:10.1063/1.368401
In(1998, September) Journal of Applied Physics Vol. 84 (5) AIP Publishing

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du Plessis, Monuko, Aharoni, Herzl, Snyman, Lukas W. (2004) Two- and multi-terminal silicon light emitting devices in standard CMOS/BiCMOS IC technology. physica status solidi (a), 201 (10). 2225-2233 doi:10.1002/pssa.200404846
Snyman, Lukas W., du Plessis, Monuko, Aharoni, Herzl (2007) Injection-Avalanche-Based n+pn Silicon Complementary Metal–Oxide–Semiconductor Light-Emitting Device (450–750 nm) with 2-Order-of-Magnitude Increase in Light Emission Intensity. Japanese Journal of Applied Physics, 46 (4) 2474-2480 doi:10.1143/jjap.46.2474
Xu, Kaikai, Snyman, Lukas W., Polleux, Jean-Luc, Aharoni, Herzl (2017) A CMOS Microdisplay Utilizing Hot Carrier Electroluminescence From Reverse-biased Si PN Junctions. Journal of Physics: Conference Series, 844. 12040pp. doi:10.1088/1742-6596/844/1/012040
Lagerstedt, O., Monemar, B., Gislason, H. (1978) Properties of GaN tunneling MIS light‐emitting diodes. Journal of Applied Physics, 49 (5). 2953-2957 doi:10.1063/1.325137
Grandjean, N., Massies, J., Leroux, M., Lorenzini, P. (1998) Ultraviolet GaN light-emitting diodes grown by molecular beam epitaxy using NH3. Applied Physics Letters, 72 (1). 82-84 doi:10.1063/1.120651
Mihaychuk, J. G., Denhoff, M. W., McAlister, S. P., McKinnon, W. R., Chin, A. (2005) Broad-spectrum light emission at microscopic breakdown sites in metal-insulator-silicon tunnel diodes. Journal of Applied Physics, 98 (5). 54502pp. doi:10.1063/1.2031946
Kalinowski, J., Camaioni, N., Di Marco, P., Fattori, V., Martelli, A. (1998) Kinetics of charge carrier recombination in organic light-emitting diodes. Applied Physics Letters, 72 (5). 513-515 doi:10.1063/1.120805
Shrotriya, Vishal, Yang, Yang (2005) Capacitance–voltage characterization of polymer light-emitting diodes. Journal of Applied Physics, 97 (5). 54504pp. doi:10.1063/1.1857053
du Plessis, Monuko (2009) Investigating nanoporous silicon explosive devices. physica status solidi (c), 6 (7). 1763-1768 doi:10.1002/pssc.200881005
Bharathan, Jayesh M., Yang, Yang (1998) Polymer/metal interfaces and the performance of polymer light-emitting diodes. Journal of Applied Physics, 84 (6). 3207-3211 doi:10.1063/1.368473
Potter, Ralph M., Blank, John M., Addamiano, Arrigo (1969) Silicon Carbide Light‐Emitting Diodes. Journal of Applied Physics, 40 (5). 2253-2257 doi:10.1063/1.1657967
 
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