Stesmans, A., Afanas’ev, V. V. (1998) Electron spin resonance features of interface defects in thermal (100)Si/SiO2. Journal of Applied Physics, 83 (5). 2449-2457 doi:10.1063/1.367005
Reference Type | Journal (article/letter/editorial) | ||
---|---|---|---|
Title | Electron spin resonance features of interface defects in thermal (100)Si/SiO2 | ||
Journal | Journal of Applied Physics | ||
Authors | Stesmans, A. | Author | |
Afanas’ev, V. V. | Author | ||
Year | 1998 (March) | Volume | 83 |
Issue | 5 | ||
Publisher | AIP Publishing | ||
DOI | doi:10.1063/1.367005Search in ResearchGate | ||
Generate Citation Formats | |||
Mindat Ref. ID | 5091208 | Long-form Identifier | mindat:1:5:5091208:7 |
GUID | 0 | ||
Full Reference | Stesmans, A., Afanas’ev, V. V. (1998) Electron spin resonance features of interface defects in thermal (100)Si/SiO2. Journal of Applied Physics, 83 (5). 2449-2457 doi:10.1063/1.367005 | ||
Plain Text | Stesmans, A., Afanas’ev, V. V. (1998) Electron spin resonance features of interface defects in thermal (100)Si/SiO2. Journal of Applied Physics, 83 (5). 2449-2457 doi:10.1063/1.367005 | ||
In | (1998, March) Journal of Applied Physics Vol. 83 (5) AIP Publishing |
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