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Keunen, K., Stesmans, A., Afanas’ev, V. V. (2011) Paramagnetic Pb-type interface defects in thermal (110)Si/SiO2. Applied Physics Letters, 98 (21). 213503pp. doi:10.1063/1.3590271

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Reference TypeJournal (article/letter/editorial)
TitleParamagnetic Pb-type interface defects in thermal (110)Si/SiO2
JournalApplied Physics Letters
AuthorsKeunen, K.Author
Stesmans, A.Author
Afanas’ev, V. V.Author
Year2011 (May 23)Volume98
Issue21
PublisherAIP Publishing
DOIdoi:10.1063/1.3590271Search in ResearchGate
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Mindat Ref. ID8593194Long-form Identifiermindat:1:5:8593194:1
GUID0
Full ReferenceKeunen, K., Stesmans, A., Afanas’ev, V. V. (2011) Paramagnetic Pb-type interface defects in thermal (110)Si/SiO2. Applied Physics Letters, 98 (21). 213503pp. doi:10.1063/1.3590271
Plain TextKeunen, K., Stesmans, A., Afanas’ev, V. V. (2011) Paramagnetic Pb-type interface defects in thermal (110)Si/SiO2. Applied Physics Letters, 98 (21). 213503pp. doi:10.1063/1.3590271
In(2011, May) Applied Physics Letters Vol. 98 (21) AIP Publishing

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Thoan, N. H., Keunen, K., Afanas’ev, V. V., Stesmans, A. (2011) Interface state energy distribution and Pb defects at Si(110)/SiO2 interfaces: Comparison to (111) and (100) silicon orientations. Journal of Applied Physics, 109 (1). 13710pp. doi:10.1063/1.3527909
Keunen, K., Stesmans, A., Afanas’ev, V. V. (2011) Inherent Si dangling bond defects at the thermal (110)Si/SiO2interface. Physical Review B, 84 (8) doi:10.1103/physrevb.84.085329
Stesmans, A., Afanas’ev, V. V. (1998) Electron spin resonance features of interface defects in thermal (100)Si/SiO2. Journal of Applied Physics, 83 (5). 2449-2457 doi:10.1063/1.367005
Afanas’ev, V. V., Stesmans, A. (1998) Positive charging of thermal SiO2/(100)Si interface by hydrogen annealing. Applied Physics Letters, 72 (1). 79-81 doi:10.1063/1.120650
Stesmans, A., Afanas’ev, V. V. (2003) Si dangling-bond-type defects at the interface of (100)Si with ultrathin HfO2. Applied Physics Letters, 82 (23). 4074-4076 doi:10.1063/1.1579564
Stesmans, A., Afanas’ev, V. V. (1998) Hydrogen-induced thermal interface degradation in (111) Si/SiO2 revealed by electron-spin resonance. Applied Physics Letters, 72 (18). 2271-2273 doi:10.1063/1.121335
Stesmans, A., Afanas’ev, V. V., Revesz, A. G. (1999) Suppression of thermal interface degradation in (111) Si/SiO2 by noble gases. Applied Physics Letters, 74 (10). 1466-1468 doi:10.1063/1.123595
Stesmans, A., Clémer, K., Afanas’ev, V. V., Edge, L. F., Schlom, D. G. (2006) Nature and stability of the (100)Si∕LaAlO3 interface probed by paramagnetic defects. Applied Physics Letters, 89 (11). 112121pp. doi:10.1063/1.2219334
Stesmans, A., Afanas’ev, V. V. (1998) Electrical activity of interfacial paramagnetic defects in thermal (100)Si/SiO2. Physical Review B, 57 (16) 10030-10034 doi:10.1103/physrevb.57.10030
Stesmans, A., Afanas’ev, V. V. (2000) Paramagnetic defects at the interface of ultrathin oxides grown under vacuum ultraviolet photon excitation on (111) and (100) Si. Applied Physics Letters, 77 (10). 1469-1471 doi:10.1063/1.1289265
Hurley, P. K., Stesmans, A., Afanas’ev, V. V., O’Sullivan, B. J., O’Callaghan, E. (2003) Analysis of Pb centers at the Si(111)/SiO2 interface following rapid thermal annealing. Journal of Applied Physics, 93 (7). 3971-3973 doi:10.1063/1.1559428
 
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