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Cassan, Eric (2000) On the reduction of direct tunneling leakage through ultrathin gate oxides by a one-dimensional Schrödinger–Poisson solver. Journal of Applied Physics, 87 (11). 7931-7939 doi:10.1063/1.373477

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Reference TypeJournal (article/letter/editorial)
TitleOn the reduction of direct tunneling leakage through ultrathin gate oxides by a one-dimensional Schrödinger–Poisson solver
JournalJournal of Applied Physics
AuthorsCassan, EricAuthor
Year2000 (June)Volume87
Issue11
PublisherAIP Publishing
DOIdoi:10.1063/1.373477Search in ResearchGate
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Mindat Ref. ID5100152Long-form Identifiermindat:1:5:5100152:8
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Full ReferenceCassan, Eric (2000) On the reduction of direct tunneling leakage through ultrathin gate oxides by a one-dimensional Schrödinger–Poisson solver. Journal of Applied Physics, 87 (11). 7931-7939 doi:10.1063/1.373477
Plain TextCassan, Eric (2000) On the reduction of direct tunneling leakage through ultrathin gate oxides by a one-dimensional Schrödinger–Poisson solver. Journal of Applied Physics, 87 (11). 7931-7939 doi:10.1063/1.373477
In(2000, June) Journal of Applied Physics Vol. 87 (11) AIP Publishing

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Khairurrijal, , Mizubayashi, W., Miyazaki, S., Hirose, M. (2000) Analytic model of direct tunnel current through ultrathin gate oxides. Journal of Applied Physics, 87 (6). 3000-3005 doi:10.1063/1.372290
Cassan, E., Galdin, S., Dollfus, P., Hesto, P. (1999) Study of direct tunneling through ultrathin gate oxide of field effect transistors using Monte Carlo simulation. Journal of Applied Physics, 86 (7). 3804-3811 doi:10.1063/1.371291
Cassan, E., Dollfus, P., Galdin, S. (2001) Wave-mechanical study of gate tunneling leakage reduction in ultra-thin (<2 nm) dielectric MOS and H-MOS devices. Journal of Non-Crystalline Solids, 280 (1) 63-68 doi:10.1016/s0022-3093(00)00355-0
Jiménez-Molinos, F., Gámiz, F., Palma, A., Cartujo, P., López-Villanueva, J. A. (2002) Direct and trap-assisted elastic tunneling through ultrathin gate oxides. Journal of Applied Physics, 91 (8). 5116-5124 doi:10.1063/1.1461062
Hou, Y. T., Li, M. F., Jin, Y., Lai, W. H. (2002) Direct tunneling hole currents through ultrathin gate oxides in metal-oxide-semiconductor devices. Journal of Applied Physics, 91 (1). 258pp. doi:10.1063/1.1416861
Städele, M., Tuttle, B. R., Hess, K. (2001) Tunneling through ultrathin SiO2 gate oxides from microscopic models. Journal of Applied Physics, 89 (1). 348-363 doi:10.1063/1.1330764
Maitra, Kingsuk, Bhat, Navakanta (2003) Analytical approach to integrate the different components of direct tunneling current through ultrathin gate oxides in n-channel metal–oxide–semiconductor field-effect transistors. Journal of Applied Physics, 93 (2). 1064-1068 doi:10.1063/1.1527710
Khairurrijal, , Mizubayashi, W., Miyazaki, S., Hirose, M. (2000) Unified analytic model of direct and Fowler–Nordheim tunnel currents through ultrathin gate oxides. Applied Physics Letters, 77 (22). 3580-3582 doi:10.1063/1.1330220
Gerardi, C., Melanotte, M., Lombardo, S., Alessandri, M., Crivelli, B., Zonca, R. (2000) Effects of nitridation by nitric oxide on the leakage current of thin SiO2 gate oxides. Journal of Applied Physics, 87 (1). 498-501 doi:10.1063/1.371916
Samanta, Piyas, Man, Tsz Yin, Zhang, Qingchun, Zhu, Chunxiang, Chan, Mansun (2006) Direct tunneling stress-induced leakage current in ultrathin HfO2∕SiO2 gate dielectric stacks. Journal of Applied Physics, 100 (9). 94507pp. doi:10.1063/1.2372313
Eriguchi, Koji, Harada, Yoshinao, Niwa, Masaaki (2000) Effects of strained layer near SiO2–Si interface on electrical characteristics of ultrathin gate oxides. Journal of Applied Physics, 87 (4). 1990-1995 doi:10.1063/1.372125
 
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