Vote for your favorite mineral in #MinCup25! - Carpathite vs. Leucite
Brace for oddness in a match between one of the very few hydrocarbon minerals carpathite and the temperature-flipping mineral leucite.
Log InRegister
Quick Links : The Mindat ManualThe Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
Home PageAbout MindatThe Mindat ManualHistory of MindatCopyright StatusWho We AreContact UsAdvertise on Mindat
Donate to MindatCorporate SponsorshipSponsor a PageSponsored PagesMindat AdvertisersAdvertise on Mindat
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
Minerals by PropertiesMinerals by ChemistryAdvanced Locality SearchRandom MineralRandom LocalitySearch by minIDLocalities Near MeSearch ArticlesSearch GlossaryMore Search Options
Search For:
Mineral Name:
Locality Name:
Keyword(s):
 
The Mindat ManualAdd a New PhotoRate PhotosLocality Edit ReportCoordinate Completion ReportAdd Glossary Item
Mining CompaniesStatisticsUsersMineral MuseumsClubs & OrganizationsMineral Shows & EventsThe Mindat DirectoryDevice SettingsThe Mineral Quiz
Photo SearchPhoto GalleriesSearch by ColorNew Photos TodayNew Photos YesterdayMembers' Photo GalleriesPast Photo of the Day GalleryPhotography

Eriguchi, Koji, Harada, Yoshinao, Niwa, Masaaki (2000) Effects of strained layer near SiO2–Si interface on electrical characteristics of ultrathin gate oxides. Journal of Applied Physics, 87 (4). 1990-1995 doi:10.1063/1.372125

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleEffects of strained layer near SiO2–Si interface on electrical characteristics of ultrathin gate oxides
JournalJournal of Applied Physics
AuthorsEriguchi, KojiAuthor
Harada, YoshinaoAuthor
Niwa, MasaakiAuthor
Year2000 (February 15)Volume87
Issue4
PublisherAIP Publishing
DOIdoi:10.1063/1.372125Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5100852Long-form Identifiermindat:1:5:5100852:1
GUID0
Full ReferenceEriguchi, Koji, Harada, Yoshinao, Niwa, Masaaki (2000) Effects of strained layer near SiO2–Si interface on electrical characteristics of ultrathin gate oxides. Journal of Applied Physics, 87 (4). 1990-1995 doi:10.1063/1.372125
Plain TextEriguchi, Koji, Harada, Yoshinao, Niwa, Masaaki (2000) Effects of strained layer near SiO2–Si interface on electrical characteristics of ultrathin gate oxides. Journal of Applied Physics, 87 (4). 1990-1995 doi:10.1063/1.372125
In(2000, February) Journal of Applied Physics Vol. 87 (4) AIP Publishing

See Also

These are possibly similar items as determined by title/reference text matching only.

Harada, Yoshinao, Eriguchi, Koji, Niwa, Masaaki, Watanabe, Takanobu, Ohdomari, Iwao (2000) Impact of Structural Strained Layer near SiO2/Si Interface on Activation Energy of Time-Dependent Dielectric Breakdown. Japanese Journal of Applied Physics, 39. 4687-4691 doi:10.1143/jjap.39.4687
Eriguchi, Koji, Niwa, Masaaki (1998) Temperature and stress polarity-dependent dielectric breakdown in ultrathin gate oxides. Applied Physics Letters, 73 (14). 1985-1987 doi:10.1063/1.122343
Harada, Yoshinao, Niwa, Masaaki, Nagatomi, Takaharu, Shimizu, Ryuichi (2000) Initial Stage of Oxidation of Si(001)-2×1Surface Studied by X-Ray Photoelectron Spectroscopy. Japanese Journal of Applied Physics, 39. 560-567 doi:10.1143/jjap.39.560
Niwa, Masaaki, Okada, Kenji, Sinclair, Robert (1996) Atomically flat, ultrathin-SiO2/Si(001)interface formation by UHV heating. Applied Surface Science, 100. 425-430 doi:10.1016/0169-4332(96)00313-3
Cassan, Eric (2000) On the reduction of direct tunneling leakage through ultrathin gate oxides by a one-dimensional Schrödinger–Poisson solver. Journal of Applied Physics, 87 (11). 7931-7939 doi:10.1063/1.373477
Gerardi, C., Melanotte, M., Lombardo, S., Alessandri, M., Crivelli, B., Zonca, R. (2000) Effects of nitridation by nitric oxide on the leakage current of thin SiO2 gate oxides. Journal of Applied Physics, 87 (1). 498-501 doi:10.1063/1.371916
Khairurrijal, , Mizubayashi, W., Miyazaki, S., Hirose, M. (2000) Analytic model of direct tunnel current through ultrathin gate oxides. Journal of Applied Physics, 87 (6). 3000-3005 doi:10.1063/1.372290
Kim, D. S., Lee, Jino, Char, K. (2005) Electrical characteristics of SiOxFy gate oxides formed by a plasma fluorination technique. Applied Physics Letters, 87 (4). 42107pp. doi:10.1063/1.1999844
Kim, Woo-Byoung, Asuha, , Matsumoto, Taketoshi, Kobayashi, Hikaru (2008) Ultrathin SiO2 layer on atomically flat Si(111) surfaces with excellent electrical characteristics formed by nitric acid oxidation method. Applied Physics Letters, 93 (7). 72101pp. doi:10.1063/1.2970040
Kar, S. (2000) Ultimate gate oxide thinness set by recombination-tunneling of electrons via Si–SiO2 interface traps. Journal of Applied Physics, 88 (5). 2693-2695 doi:10.1063/1.1287114
Hwang, Hyunsang, Ting, Wenchi, Maiti, Bikas, Kwong, Dim‐Lee, Lee, Jack (1990) Electrical characteristics of ultrathin oxynitride gate dielectric prepared by rapid thermal oxidation of Si in N2O. Applied Physics Letters, 57 (10). 1010-1011 doi:10.1063/1.103550
 
and/or  
Mindat.org is an outreach project of the Hudson Institute of Mineralogy, a 501(c)(3) not-for-profit organization.
Copyright © mindat.org and the Hudson Institute of Mineralogy 1993-2025, except where stated. Most political location boundaries are © OpenStreetMap contributors. Mindat.org relies on the contributions of thousands of members and supporters. Founded in 2000 by Jolyon Ralph.
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
Privacy Policy - Terms & Conditions - Contact Us / DMCA issues - Report a bug/vulnerability Current server date and time: September 6, 2025 20:37:42
Go to top of page