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Eriguchi, Koji, Niwa, Masaaki (1998) Temperature and stress polarity-dependent dielectric breakdown in ultrathin gate oxides. Applied Physics Letters, 73 (14). 1985-1987 doi:10.1063/1.122343

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Reference TypeJournal (article/letter/editorial)
TitleTemperature and stress polarity-dependent dielectric breakdown in ultrathin gate oxides
JournalApplied Physics Letters
AuthorsEriguchi, KojiAuthor
Niwa, MasaakiAuthor
Year1998 (October 5)Volume73
Issue14
PublisherAIP Publishing
DOIdoi:10.1063/1.122343Search in ResearchGate
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Mindat Ref. ID8521963Long-form Identifiermindat:1:5:8521963:6
GUID0
Full ReferenceEriguchi, Koji, Niwa, Masaaki (1998) Temperature and stress polarity-dependent dielectric breakdown in ultrathin gate oxides. Applied Physics Letters, 73 (14). 1985-1987 doi:10.1063/1.122343
Plain TextEriguchi, Koji, Niwa, Masaaki (1998) Temperature and stress polarity-dependent dielectric breakdown in ultrathin gate oxides. Applied Physics Letters, 73 (14). 1985-1987 doi:10.1063/1.122343
In(1998, October) Applied Physics Letters Vol. 73 (14) AIP Publishing

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Eriguchi, Koji, Harada, Yoshinao, Niwa, Masaaki (2000) Effects of strained layer near SiO2ā€“Si interface on electrical characteristics of ultrathin gate oxides. Journal of Applied Physics, 87 (4). 1990-1995 doi:10.1063/1.372125
Harada, Yoshinao, Eriguchi, Koji, Niwa, Masaaki, Watanabe, Takanobu, Ohdomari, Iwao (2000) Impact of Structural Strained Layer near SiO2/Si Interface on Activation Energy of Time-Dependent Dielectric Breakdown. Japanese Journal of Applied Physics, 39. 4687-4691 doi:10.1143/jjap.39.4687
Houssa, M., Nigam, T., Mertens, P. W., Heyns, M. M. (1998) Soft breakdown in ultrathin gate oxides: Correlation with the percolation theory of nonlinear conductors. Applied Physics Letters, 73 (4). 514-516 doi:10.1063/1.121918
Chen, C.-C., Chang, C.-Y., Chien, C.-H., Huang, T.-Y., Lin, H.-C., Liang, M.-S. (1999) Temperature-accelerated dielectric breakdown in ultrathin gate oxides. Applied Physics Letters, 74 (24). 3708-3710 doi:10.1063/1.123228
Cheung, Kin P. (2003) Temperature effect on ultrathin SiO2 time-dependent-dielectric-breakdown. Applied Physics Letters, 83 (12). 2399-2401 doi:10.1063/1.1613367
Lombardo, S., La Magna, A., Crupi, I., Gerardi, C., Crupi, F. (2001) Reduction of thermal damage in ultrathin gate oxides after intrinsic dielectric breakdown. Applied Physics Letters, 79 (10). 1522-1524 doi:10.1063/1.1400083
Yamada, Hiroshi, Makino, Takahiro (1991) Correlations between stressā€induced positive charges and timeā€dependent dielectric breakdown in ultrathin silicon oxide films. Applied Physics Letters, 59 (17). 2159-2161 doi:10.1063/1.106114
Miranda, E., JimƩnez, D., SuƱƩ, J. (2011) Progressive breakdown dynamics and entropy production in ultrathin SiO2 gate oxides. Applied Physics Letters, 98 (25). 253504pp. doi:10.1063/1.3602318
Mizubayashi, Wataru, Yoshida, Yuichi, Miyazaki, Seiichi, Hirose, Masataka (2002) Quantitative Analysis of Oxide Voltage and Field Dependence of Time-Dependent Dielectric Soft Breakdown and Hard Breakdown in Ultrathin Gate Oxides. Japanese Journal of Applied Physics, 41. 2426-2430 doi:10.1143/jjap.41.2426
McPherson, J. W. (2016) Polarity dependent thermochemical E-model for describing time dependent dielectric breakdown in metal-oxide-semiconductor devices with hyper-thin gate dielectrics. Journal of Applied Physics, 120 (10). 104102pp. doi:10.1063/1.4962320
Asamoto, Yuya, Hattori, Tatsuya, Noma, Masao, Yamashita, Michiru, Hasegawa, Shigehiko, Urabe, Keiichiro, Eriguchi, Koji (2025) Characterization of time-dependent dielectric degradation and breakdown in bulk hexagonal BN/Si structures. Journal of Applied Physics, 137 (10). doi:10.1063/5.0254990
 
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