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Martínez-Criado, G., Cros, A., Cantarero, A., Dimitrov, R., Ambacher, O., Stutzmann, M. (2000) Optical characterization of Mg-doped GaN films grown by metalorganic chemical vapor phase deposition. Journal of Applied Physics, 88 (6). 3470-3478 doi:10.1063/1.1289794

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Reference TypeJournal (article/letter/editorial)
TitleOptical characterization of Mg-doped GaN films grown by metalorganic chemical vapor phase deposition
JournalJournal of Applied Physics
AuthorsMartínez-Criado, G.Author
Cros, A.Author
Cantarero, A.Author
Dimitrov, R.Author
Ambacher, O.Author
Stutzmann, M.Author
Year2000 (September 15)Volume88
Issue6
PublisherAIP Publishing
DOIdoi:10.1063/1.1289794Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5105145Long-form Identifiermindat:1:5:5105145:3
GUID0
Full ReferenceMartínez-Criado, G., Cros, A., Cantarero, A., Dimitrov, R., Ambacher, O., Stutzmann, M. (2000) Optical characterization of Mg-doped GaN films grown by metalorganic chemical vapor phase deposition. Journal of Applied Physics, 88 (6). 3470-3478 doi:10.1063/1.1289794
Plain TextMartínez-Criado, G., Cros, A., Cantarero, A., Dimitrov, R., Ambacher, O., Stutzmann, M. (2000) Optical characterization of Mg-doped GaN films grown by metalorganic chemical vapor phase deposition. Journal of Applied Physics, 88 (6). 3470-3478 doi:10.1063/1.1289794
In(2000, September) Journal of Applied Physics Vol. 88 (6) AIP Publishing

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Miskys, C. R., Kelly, M. K., Ambacher, O., Martı́nez-Criado, G., Stutzmann, M. (2000) GaN homoepitaxy by metalorganic chemical-vapor deposition on free-standing GaN substrates. Applied Physics Letters, 77 (12). 1858pp. doi:10.1063/1.1311596
Martı́nez-Criado, G., Miskys, C. R., Cros, A., Ambacher, O., Cantarero, A., Stutzmann, M. (2001) Photoluminescence study of excitons in homoepitaxial GaN. Journal of Applied Physics, 90 (11). 5627-5631 doi:10.1063/1.1413713
Martı́nez-Criado, G., Cros, A., Cantarero, A., Ambacher, O., Miskys, C. R., Dimitrov, R., Stutzmann, M., Smart, J., Shealy, J. R. (2001) Residual strain effects on the two-dimensional electron gas concentration of AlGaN/GaN heterostructures. Journal of Applied Physics, 90 (9). 4735-4740 doi:10.1063/1.1408268
Dimitrov, R., Murphy, M., Smart, J., Schaff, W., Shealy, J. R., Eastman, L. F., Ambacher, O., Stutzmann, M. (2000) Two-dimensional electron gases in Ga-face and N-face AlGaN/GaN heterostructures grown by plasma-induced molecular beam epitaxy and metalorganic chemical vapor deposition on sapphire. Journal of Applied Physics, 87 (7). 3375-3380 doi:10.1063/1.372353
Kelly, M. K., Ambacher, O., Dahlheimer, B., Groos, G., Dimitrov, R., Angerer, H., Stutzmann, M. (1996) Optical patterning of GaN films. Applied Physics Letters, 69 (12). 1749-1751 doi:10.1063/1.117473
Götz, W., Johnson, N. M., Bour, D. P. (1996) Deep level defects in Mg‐doped, p‐type GaN grown by metalorganic chemical vapor deposition. Applied Physics Letters, 68 (24). 3470-3472 doi:10.1063/1.116075
Mart�nez-Criado, G., Miskys, C.R., Cros, A., Cantarero, A., Ambacher, O., Stutzmann, M. (2001) Excitonic Transitions in Homoepitaxial GaN. physica status solidi (b), 228 (2). 497-500 doi:10.1002/1521-3951(200111)228:2<497::aid-pssb497>3.0.co;2-r
Joshi, N. V., Cros, A., Cantarero, A., Medina, H., Ambacher, O., Stutzmann, M. (2002) Role of defect centers in recombination processes in GaN monocrystals. Applied Physics Letters, 80 (16). 2824-2826 doi:10.1063/1.1471938
Xu, Dapeng, Yang, Hui, Zhao, D. G., Li, S. F., Wu, R. H. (2000) Room-temperature optical transitions in Mg-doped cubic GaN/GaAs(100) grown by metalorganic chemical vapor deposition. Journal of Applied Physics, 87 (4). 2064-2066 doi:10.1063/1.372139
Pan, M., Steckl, A. J. (2003) Red emission from Eu-doped GaN luminescent films grown by metalorganic chemical vapor deposition. Applied Physics Letters, 83 (1). 9-11 doi:10.1063/1.1590738
Götz, W., Johnson, N. M., Walker, J., Bour, D. P., Street, R. A. (1996) Activation of acceptors in Mg‐doped GaN grown by metalorganic chemical vapor deposition. Applied Physics Letters, 68 (5). 667-669 doi:10.1063/1.116503
 
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