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Pan, M., Steckl, A. J. (2003) Red emission from Eu-doped GaN luminescent films grown by metalorganic chemical vapor deposition. Applied Physics Letters, 83 (1). 9-11 doi:10.1063/1.1590738

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Reference TypeJournal (article/letter/editorial)
TitleRed emission from Eu-doped GaN luminescent films grown by metalorganic chemical vapor deposition
JournalApplied Physics Letters
AuthorsPan, M.Author
Steckl, A. J.Author
Year2003 (July 7)Volume83
Issue1
PublisherAIP Publishing
DOIdoi:10.1063/1.1590738Search in ResearchGate
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Mindat Ref. ID8536154Long-form Identifiermindat:1:5:8536154:0
GUID0
Full ReferencePan, M., Steckl, A. J. (2003) Red emission from Eu-doped GaN luminescent films grown by metalorganic chemical vapor deposition. Applied Physics Letters, 83 (1). 9-11 doi:10.1063/1.1590738
Plain TextPan, M., Steckl, A. J. (2003) Red emission from Eu-doped GaN luminescent films grown by metalorganic chemical vapor deposition. Applied Physics Letters, 83 (1). 9-11 doi:10.1063/1.1590738
In(2003, July) Applied Physics Letters Vol. 83 (1) AIP Publishing

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Heikenfeld, J., Garter, M., Lee, D. S., Birkhahn, R., Steckl, A. J. (1999) Red light emission by photoluminescence and electroluminescence from Eu-doped GaN. Applied Physics Letters, 75 (9). 1189-1191 doi:10.1063/1.124686
Lee, D. S., Steckl, A. J. (2003) Enhanced blue emission from Tm-doped AlxGa1−xN electroluminescent thin films. Applied Physics Letters, 83 (11). 2094-2096 doi:10.1063/1.1611275
Lee, D. S., Steckl, A. J. (2001) Room-temperature-grown rare-earth-doped GaN luminescent thin films. Applied Physics Letters, 79 (13). 1962-1964 doi:10.1063/1.1406138
Sato, Michio (1996) Highly resistive CH‐doped GaN grown by plasma‐assisted metalorganic chemical vapor deposition. Applied Physics Letters, 68 (7). 935-937 doi:10.1063/1.116236
Li, X., Coleman, J. J. (1996) Time‐dependent study of low energy electron beam irradiation of Mg‐doped GaN grown by metalorganic chemical vapor deposition. Applied Physics Letters, 69 (11). 1605-1607 doi:10.1063/1.117045
Steckl, A. J., Birkhahn, R. (1998) Visible emission from Er-doped GaN grown by solid source molecular beam epitaxy. Applied Physics Letters, 73 (12). 1700-1702 doi:10.1063/1.122250
Birkhahn, R., Garter, M., Steckl, A. J. (1999) Red light emission by photoluminescence and electroluminescence from Pr-doped GaN on Si substrates. Applied Physics Letters, 74 (15). 2161-2163 doi:10.1063/1.123787
Sugiura, Lisa, Suzuki, Mariko, Nishio, Johji (1998) p-type conduction in as-grown Mg-doped GaN grown by metalorganic chemical vapor deposition. Applied Physics Letters, 72 (14). 1748-1750 doi:10.1063/1.121172
Guo, J. D., Feng, M. S., F.M.Pan, (1995) Se-doped GaN Films Grown by Low-Pressure Metalorganic Chemical Vapor Deposition. Japanese Journal of Applied Physics, 34. 5510-5514 doi:10.1143/jjap.34.5510
Birkhahn, R., Steckl, A. J. (1998) Green emission from Er-doped GaN grown by molecular beam epitaxy on Si substrates. Applied Physics Letters, 73 (15). 2143-2145 doi:10.1063/1.122404
Li, X., Coleman, J. J. (1997) Depth-resolved and excitation power dependent cathodoluminescence study of GaN films grown by metalorganic chemical vapor deposition. Applied Physics Letters, 70 (4). 438-440 doi:10.1063/1.118174
 
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