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Birkhahn, R., Steckl, A. J. (1998) Green emission from Er-doped GaN grown by molecular beam epitaxy on Si substrates. Applied Physics Letters, 73 (15). 2143-2145 doi:10.1063/1.122404

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Reference TypeJournal (article/letter/editorial)
TitleGreen emission from Er-doped GaN grown by molecular beam epitaxy on Si substrates
JournalApplied Physics Letters
AuthorsBirkhahn, R.Author
Steckl, A. J.Author
Year1998 (October 12)Volume73
Issue15
PublisherAIP Publishing
DOIdoi:10.1063/1.122404Search in ResearchGate
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Mindat Ref. ID8522014Long-form Identifiermindat:1:5:8522014:6
GUID0
Full ReferenceBirkhahn, R., Steckl, A. J. (1998) Green emission from Er-doped GaN grown by molecular beam epitaxy on Si substrates. Applied Physics Letters, 73 (15). 2143-2145 doi:10.1063/1.122404
Plain TextBirkhahn, R., Steckl, A. J. (1998) Green emission from Er-doped GaN grown by molecular beam epitaxy on Si substrates. Applied Physics Letters, 73 (15). 2143-2145 doi:10.1063/1.122404
In(1998, October) Applied Physics Letters Vol. 73 (15) AIP Publishing

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Steckl, A. J., Birkhahn, R. (1998) Visible emission from Er-doped GaN grown by solid source molecular beam epitaxy. Applied Physics Letters, 73 (12). 1700-1702 doi:10.1063/1.122250
Steckl, A. J., Garter, M., Birkhahn, R., Scofield, J. (1998) Green electroluminescence from Er-doped GaN Schottky barrier diodes. Applied Physics Letters, 73 (17). 2450-2452 doi:10.1063/1.122478
Birkhahn, R., Garter, M., Steckl, A. J. (1999) Red light emission by photoluminescence and electroluminescence from Pr-doped GaN on Si substrates. Applied Physics Letters, 74 (15). 2161-2163 doi:10.1063/1.123787
Steckl, A. J., Garter, M., Lee, D. S., Heikenfeld, J., Birkhahn, R. (1999) Blue emission from Tm-doped GaN electroluminescent devices. Applied Physics Letters, 75 (15). 2184-2186 doi:10.1063/1.124958
Heikenfeld, J., Garter, M., Lee, D. S., Birkhahn, R., Steckl, A. J. (1999) Red light emission by photoluminescence and electroluminescence from Eu-doped GaN. Applied Physics Letters, 75 (9). 1189-1191 doi:10.1063/1.124686
Citrin, P. H., Northrup, P. A., Birkhahn, R., Steckl, A. J. (2000) Local structure and bonding of Er in GaN: A contrast with Er in Si. Applied Physics Letters, 76 (20). 2865-2867 doi:10.1063/1.126499
Lorenz, K, Vianden, R, Birkhahn, R, Steckl, A.J, da Silva, M.F, Soares, J.C, Alves, E (2000) RBS/Channeling study of Er doped GaN films grown by MBE on Si substrates. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 161. 946-951 doi:10.1016/s0168-583x(99)00683-7
Lee, D. S., Heikenfeld, J., Birkhahn, R., Garter, M., Lee, B. K., Steckl, A. J. (2000) Voltage-controlled yellow or orange emission from GaN codoped with Er and Eu. Applied Physics Letters, 76 (12). 1525-1527 doi:10.1063/1.126084
Nottenburg, R., Bühlmann, H. J., Frei, M., Ilegems, M. (1984) Compensation effects in Si‐doped GaAs grown by molecular beam epitaxy. Applied Physics Letters, 44 (1). 71-73 doi:10.1063/1.94556
Müllhäuser, J. R., Brandt, O., Trampert, A., Jenichen, B., Ploog, K. H. (1998) Green photoluminescence from cubic In0.4Ga0.6N grown by radio frequency plasma-assisted molecular beam epitaxy. Applied Physics Letters, 73 (9). 1230-1232 doi:10.1063/1.122136
Pan, M., Steckl, A. J. (2003) Red emission from Eu-doped GaN luminescent films grown by metalorganic chemical vapor deposition. Applied Physics Letters, 83 (1). 9-11 doi:10.1063/1.1590738
 
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