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Butcher, K. S. A., Tansley, T. L. (2001) Ultrahigh resistivity aluminum nitride grown on mercury cadmium telluride. Journal of Applied Physics, 90 (12). 6217-6221 doi:10.1063/1.1415532

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Reference TypeJournal (article/letter/editorial)
TitleUltrahigh resistivity aluminum nitride grown on mercury cadmium telluride
JournalJournal of Applied Physics
AuthorsButcher, K. S. A.Author
Tansley, T. L.Author
Year2001 (December 15)Volume90
Issue12
PublisherAIP Publishing
DOIdoi:10.1063/1.1415532Search in ResearchGate
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Mindat Ref. ID5109511Long-form Identifiermindat:1:5:5109511:0
GUID0
Full ReferenceButcher, K. S. A., Tansley, T. L. (2001) Ultrahigh resistivity aluminum nitride grown on mercury cadmium telluride. Journal of Applied Physics, 90 (12). 6217-6221 doi:10.1063/1.1415532
Plain TextButcher, K. S. A., Tansley, T. L. (2001) Ultrahigh resistivity aluminum nitride grown on mercury cadmium telluride. Journal of Applied Physics, 90 (12). 6217-6221 doi:10.1063/1.1415532
In(2001, December) Journal of Applied Physics Vol. 90 (12) AIP Publishing

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Butcher, K. S. A., Wintrebert-Fouquet, M., Chen, P. P.-T., Tansley, T. L., Dou, H., Shrestha, S. K., Timmers, H., Kuball, M., Prince, K. E., Bradby, J. E. (2004) Nitrogen-rich indium nitride. Journal of Applied Physics, 95 (11). 6124-6128 doi:10.1063/1.1711173
Murakami, S., Okamoto, T., Maruyama, K., Takigawa, H. (1993) Iodine doping in mercury cadmium telluride (Hg1−xCdxTe) grown by direct alloy growth using metalorganic chemical vapor deposition. Applied Physics Letters, 63 (7). 899-901 doi:10.1063/1.109895
Raccah, P. M., Garland, J. W., Zhang, Z., Lee, U., Ugur, S., Mioc, S., Ghandi, S. K., Bhat, I. (1985) Study of mercury cadmium telluride epilayers grown by metalorganic vapor‐phase epitaxy. Journal of Applied Physics, 57 (6). 2014-2017 doi:10.1063/1.334388
Malloy, K. J., Van Vechten, J. A. (1989) Temperature dependence of the mercury telluride‐cadmium telluride band offset. Applied Physics Letters, 54 (10). 937-939 doi:10.1063/1.100813
Tansley, T. L., Foley, C. P. (1986) Infrared absorption in indium nitride. Journal of Applied Physics, 60 (6). 2092-2095 doi:10.1063/1.337213
Butcher, K. S. A., Timmers, H., Afifuddin, , Chen, Patrick P.-T., Weijers, T. D. M., Goldys, E. M., Tansley, T. L., Elliman, R. G., Freitas, J. A. (2002) Crystal size and oxygen segregation for polycrystalline GaN. Journal of Applied Physics, 92 (6). 3397-3403 doi:10.1063/1.1499232
Agnihotri, O. P., Sehgal, H. K., Pal, R., Gopal, Vishnu (2000) Photon-induced modifications in cadmium telluride/mercury cadmium telluride heterostructure interfaces. Applied Physics Letters, 77 (9). 1330-1332 doi:10.1063/1.1290145
Tansley, T. L., Foley, C. P. (1986) Optical band gap of indium nitride. Journal of Applied Physics, 59 (9). 3241-3244 doi:10.1063/1.336906
Jones, K. A., Datta, A., Lynn, K. G., Franks, L. A. (2010) Variations in μτ measurements in cadmium zinc telluride. Journal of Applied Physics, 107 (12). 123714pp. doi:10.1063/1.3428475
Aoki, T., Smith, David J., Chang, Y., Zhao, J., Badano, G., Grein, C., Sivananthan, S. (2003) Mercury cadmium telluride/tellurium intergrowths in HgCdTe epilayers grown by molecular-beam epitaxy. Applied Physics Letters, 82 (14). 2275-2277 doi:10.1063/1.1566462
Janik, E, Triboulet, R (1983) Ohmic contacts to p-type cadmium telluride and cadmium mercury telluride. Journal of Physics D: Applied Physics, 16. 2333-2340 doi:10.1088/0022-3727/16/12/011
 
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