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Butcher, K. S. A., Timmers, H., Afifuddin, , Chen, Patrick P.-T., Weijers, T. D. M., Goldys, E. M., Tansley, T. L., Elliman, R. G., Freitas, J. A. (2002) Crystal size and oxygen segregation for polycrystalline GaN. Journal of Applied Physics, 92 (6). 3397-3403 doi:10.1063/1.1499232

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Reference TypeJournal (article/letter/editorial)
TitleCrystal size and oxygen segregation for polycrystalline GaN
JournalJournal of Applied Physics
AuthorsButcher, K. S. A.Author
Timmers, H.Author
Afifuddin, Author
Chen, Patrick P.-T.Author
Weijers, T. D. M.Author
Goldys, E. M.Author
Tansley, T. L.Author
Elliman, R. G.Author
Freitas, J. A.Author
Year2002 (September 15)Volume92
Issue6
PublisherAIP Publishing
DOIdoi:10.1063/1.1499232Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5116626Long-form Identifiermindat:1:5:5116626:9
GUID0
Full ReferenceButcher, K. S. A., Timmers, H., Afifuddin, , Chen, Patrick P.-T., Weijers, T. D. M., Goldys, E. M., Tansley, T. L., Elliman, R. G., Freitas, J. A. (2002) Crystal size and oxygen segregation for polycrystalline GaN. Journal of Applied Physics, 92 (6). 3397-3403 doi:10.1063/1.1499232
Plain TextButcher, K. S. A., Timmers, H., Afifuddin, , Chen, Patrick P.-T., Weijers, T. D. M., Goldys, E. M., Tansley, T. L., Elliman, R. G., Freitas, J. A. (2002) Crystal size and oxygen segregation for polycrystalline GaN. Journal of Applied Physics, 92 (6). 3397-3403 doi:10.1063/1.1499232
In(2002, September) Journal of Applied Physics Vol. 92 (6) AIP Publishing

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Butcher, K.S.A., Afifuddin, , Chen, Patrick P.-T., Godlewski, M., Szczerbakow, A., Goldys, E.M., Tansley, T.L., Freitas, J.A. (2002) Recrystallization prospects for freestanding low-temperature GaN grown using ZnO buffer layers. Journal of Crystal Growth, 246 (3). 237-243 doi:10.1016/s0022-0248(02)01747-5
Butcher, K. S. A., Wintrebert-Fouquet, M., Chen, P. P.-T., Tansley, T. L., Dou, H., Shrestha, S. K., Timmers, H., Kuball, M., Prince, K. E., Bradby, J. E. (2004) Nitrogen-rich indium nitride. Journal of Applied Physics, 95 (11). 6124-6128 doi:10.1063/1.1711173
Butcher, K.S.A, Afifuddin, , Tansley, T.L, Brack, N, Pigram, P.J, Timmers, H, Prince, K.E, Elliman, R.G (2004) Gallium and oxygen accumulations on gallium nitride surfaces following argon ion milling in ultra-high vacuum conditions. Applied Surface Science, 230. 18-23 doi:10.1016/j.apsusc.2004.02.029
Butcher, K. S. A., Fernandes, A. J., Chen, P. P.-T., Wintrebert-Fouquet, M., Timmers, H., Shrestha, S. K., Hirshy, H., Perks, R. M., Usher, Brian F. (2007) The nature of nitrogen related point defects in common forms of InN. Journal of Applied Physics, 101 (12). 123702pp. doi:10.1063/1.2736654
Abbas, G. A., Papakonstantinou, P., McLaughlin, J. A., Weijers-Dall, T. D. M., Elliman, R. G., Filik, J. (2005) Hydrogen softening and optical transparency in Si-incorporated hydrogenated amorphous carbon films. Journal of Applied Physics, 98 (10). 103505pp. doi:10.1063/1.2132088
Butcher, K.S.A., Afifuddin, , Chen, P.P.-T., Goldys, E.M., Tansley, T.L. (2001) UV Moderation of Nitride Films during Remote Plasma Enhanced Chemical Vapour Deposition. physica status solidi (a), 188 (2). 667-671 doi:10.1002/1521-396x(200112)188:2<667::aid-pssa667>3.0.co;2-s
Nygren, E., Pogany, A. P., Short, K. T., Williams, J. S., Elliman, R. G., Poate, J. M. (1988) Impurity‐stimulated crystallization and diffusion in amorphous silicon. Applied Physics Letters, 52 (6). 439-441 doi:10.1063/1.99436
Tournear, D. M., Hoffbauer, M. A., Akhadov, E. A., Chen, A. T., Pendleton, S. J., Williamson, T. L., Cha, K. C., Epstein, R. I. (2008) Gamma-ray waveguides. Applied Physics Letters, 92 (15). 153502pp. doi:10.1063/1.2905280
Goldys, E. M., Chin, V. W. L., Tansley, T. L., Vaughan, M. R. (1994) Photoluminescence excitation interpreted by photon recycling in GaAs/GaAlAs multiple‐quantum‐well structure. Journal of Applied Physics, 75 (8). 4194-4200 doi:10.1063/1.356004
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Butcher, K. S. A., Tansley, T. L. (2001) Ultrahigh resistivity aluminum nitride grown on mercury cadmium telluride. Journal of Applied Physics, 90 (12). 6217-6221 doi:10.1063/1.1415532
 
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