Nashima, S., Morikawa, O., Takata, K., Hangyo, M. (2001) Temperature dependence of optical and electronic properties of moderately doped silicon at terahertz frequencies. Journal of Applied Physics, 90 (2). 837-842 doi:10.1063/1.1376673
| Reference Type | Journal (article/letter/editorial) | ||
|---|---|---|---|
| Title | Temperature dependence of optical and electronic properties of moderately doped silicon at terahertz frequencies | ||
| Journal | Journal of Applied Physics | ||
| Authors | Nashima, S. | Author | |
| Morikawa, O. | Author | ||
| Takata, K. | Author | ||
| Hangyo, M. | Author | ||
| Year | 2001 (July 15) | Volume | 90 |
| Issue | 2 | ||
| Publisher | AIP Publishing | ||
| DOI | doi:10.1063/1.1376673Search in ResearchGate | ||
| Generate Citation Formats | |||
| Mindat Ref. ID | 5109679 | Long-form Identifier | mindat:1:5:5109679:3 |
| GUID | 0 | ||
| Full Reference | Nashima, S., Morikawa, O., Takata, K., Hangyo, M. (2001) Temperature dependence of optical and electronic properties of moderately doped silicon at terahertz frequencies. Journal of Applied Physics, 90 (2). 837-842 doi:10.1063/1.1376673 | ||
| Plain Text | Nashima, S., Morikawa, O., Takata, K., Hangyo, M. (2001) Temperature dependence of optical and electronic properties of moderately doped silicon at terahertz frequencies. Journal of Applied Physics, 90 (2). 837-842 doi:10.1063/1.1376673 | ||
| In | (2001, July) Journal of Applied Physics Vol. 90 (2) AIP Publishing | ||
See Also
These are possibly similar items as determined by title/reference text matching only.
