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Ohta, Hiroyuki, Hori, Masaru, Goto, Toshio (2001) Ultrathin fluorinated silicon nitride gate dielectric films formed by remote plasma enhanced chemical vapor deposition employing NH3 and SiF4. Journal of Applied Physics, 90 (4). 1955-1961 doi:10.1063/1.1381556

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Reference TypeJournal (article/letter/editorial)
TitleUltrathin fluorinated silicon nitride gate dielectric films formed by remote plasma enhanced chemical vapor deposition employing NH3 and SiF4
JournalJournal of Applied Physics
AuthorsOhta, HiroyukiAuthor
Hori, MasaruAuthor
Goto, ToshioAuthor
Year2001 (August 15)Volume90
Issue4
PublisherAIP Publishing
DOIdoi:10.1063/1.1381556Search in ResearchGate
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Mindat Ref. ID5110021Long-form Identifiermindat:1:5:5110021:8
GUID0
Full ReferenceOhta, Hiroyuki, Hori, Masaru, Goto, Toshio (2001) Ultrathin fluorinated silicon nitride gate dielectric films formed by remote plasma enhanced chemical vapor deposition employing NH3 and SiF4. Journal of Applied Physics, 90 (4). 1955-1961 doi:10.1063/1.1381556
Plain TextOhta, Hiroyuki, Hori, Masaru, Goto, Toshio (2001) Ultrathin fluorinated silicon nitride gate dielectric films formed by remote plasma enhanced chemical vapor deposition employing NH3 and SiF4. Journal of Applied Physics, 90 (4). 1955-1961 doi:10.1063/1.1381556
In(2001, August) Journal of Applied Physics Vol. 90 (4) AIP Publishing

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Ohta, Hiroyuki, Nagashima, Atsushi, Hori, Masaru, Goto, Toshio (2001) Effect of ions and radicals on formation of silicon nitride gate dielectric films using plasma chemical vapor deposition. Journal of Applied Physics, 89 (9). 5083-5087 doi:10.1063/1.1337939
Nagai, Hisao, Hori, Masaru, Goto, Toshio, Fujii, Toshiaki, Hiramatsu, Mineo (2003) Fabrication of Multilayered SiOCH Films with Low Dielectric Constant Employing Layer-by-Layer Process of Plasma Enhanced Chemical Vapor Deposition and Oxidation. Japanese Journal of Applied Physics, 42. 2775-2779 doi:10.1143/jjap.42.2775
Fujita, Kazushi, Ito, Masafumi, Hori, Masaru, Goto, Toshio (2003) Synthesis of Polytetrafluoroethylene-like Films by a Novel Plasma Enhanced Chemical Vapor Deposition Employing Solid Material Evaporation Technique. Japanese Journal of Applied Physics, 42. 650-656 doi:10.1143/jjap.42.650
Ohta, Takayuki, Hara, Ken-ichiro, Ishida, Tetsuro, Hori, Masaru, Goto, Toshio, Ito, Masafumi, Kawakami, Satoshi, Ishii, Nobuo (2003) Measurement of Si, SiF, and SiF2 radicals and SiF4 molecule using very high frequency capacitively coupled plasma employing SiF4. Journal of Applied Physics, 94 (3). 1428-1435 doi:10.1063/1.1592011
Livengood, R. E., Hess, D. W. (1987) Plasma enhanced chemical vapor deposition of fluorinated silicon nitride using SiH4‐NH3‐NF3mixtures. Applied Physics Letters, 50 (10). 560-562 doi:10.1063/1.98134
Ma, Y., Yasuda, T., Lucovsky, G. (1994) Ultrathin device quality oxide‐nitride‐oxide heterostructure formed by remote plasma enhanced chemical vapor deposition. Applied Physics Letters, 64 (17). 2226-2228 doi:10.1063/1.111681
Fujita, Kazushi, Kobayashi, Shigeto, Ito, Masafumi, Hori, Masaru, Goto, Toshio (2001) Amorphous Silicon and Tungsten Etching Employing Environmentally Benign Plasma Process. Japanese Journal of Applied Physics, 40. 832-836 doi:10.1143/jjap.40.832
Teii, Kungen, Hori, Masaru, Goto, Toshio (2002) Ion-to-CH3 flux ratio in diamond chemical-vapor deposition. Journal of Applied Physics, 92 (7). 4103-4108 doi:10.1063/1.1506384
Nagai, Hisao, Hiramatsu, Mineo, Hori, Masaru, Goto, Toshio (2003) Etching organic low dielectric film in ultrahigh frequency plasma using N2/H2 and N2/NH3 gases. Journal of Applied Physics, 94 (3). 1362-1367 doi:10.1063/1.1588351
Sumiya, Shigeaki, Mizutani, Yuko, Yoshida, Ryohei, Hori, Masaru, Goto, Toshio, Ito, Masafumi, Tsukada, Tsutomu, Samukawa, Seiji (2000) Plasma diagnostics and low-temperature deposition of microcrystalline silicon films in ultrahigh-frequency silane plasma. Journal of Applied Physics, 88 (1). 576-581 doi:10.1063/1.373698
Yamakawa, Koji, Hori, Masaru, Goto, Toshio, Den, Shoji, Katagiri, Toshirou, Kano, Hiroyuki (2005) Etching process of silicon dioxide with nonequilibrium atmospheric pressure plasma. Journal of Applied Physics, 98 (1). 13301pp. doi:10.1063/1.1944219
 
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