Teii, Kungen, Hori, Masaru, Goto, Toshio (2002) Ion-to-CH3 flux ratio in diamond chemical-vapor deposition. Journal of Applied Physics, 92 (7). 4103-4108 doi:10.1063/1.1506384
Reference Type | Journal (article/letter/editorial) | ||
---|---|---|---|
Title | Ion-to-CH3 flux ratio in diamond chemical-vapor deposition | ||
Journal | Journal of Applied Physics | ||
Authors | Teii, Kungen | Author | |
Hori, Masaru | Author | ||
Goto, Toshio | Author | ||
Year | 2002 (October) | Volume | 92 |
Issue | 7 | ||
Publisher | AIP Publishing | ||
DOI | doi:10.1063/1.1506384Search in ResearchGate | ||
Generate Citation Formats | |||
Mindat Ref. ID | 5116959 | Long-form Identifier | mindat:1:5:5116959:4 |
GUID | 0 | ||
Full Reference | Teii, Kungen, Hori, Masaru, Goto, Toshio (2002) Ion-to-CH3 flux ratio in diamond chemical-vapor deposition. Journal of Applied Physics, 92 (7). 4103-4108 doi:10.1063/1.1506384 | ||
Plain Text | Teii, Kungen, Hori, Masaru, Goto, Toshio (2002) Ion-to-CH3 flux ratio in diamond chemical-vapor deposition. Journal of Applied Physics, 92 (7). 4103-4108 doi:10.1063/1.1506384 | ||
In | (2002, October) Journal of Applied Physics Vol. 92 (7) AIP Publishing |
See Also
These are possibly similar items as determined by title/reference text matching only.