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McCaffrey, J. P., Robertson, M. D., Poole, P. J., Riel, B. J., Fafard, S. (2001) Interpretation and modeling of buried InAs quantum dots on GaAs and InP substrates. Journal of Applied Physics, 90 (4). 1784-1787 doi:10.1063/1.1384861

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Reference TypeJournal (article/letter/editorial)
TitleInterpretation and modeling of buried InAs quantum dots on GaAs and InP substrates
JournalJournal of Applied Physics
AuthorsMcCaffrey, J. P.Author
Robertson, M. D.Author
Poole, P. J.Author
Riel, B. J.Author
Fafard, S.Author
Year2001 (August 15)Volume90
Issue4
PublisherAIP Publishing
DOIdoi:10.1063/1.1384861Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5110070Long-form Identifiermindat:1:5:5110070:4
GUID0
Full ReferenceMcCaffrey, J. P., Robertson, M. D., Poole, P. J., Riel, B. J., Fafard, S. (2001) Interpretation and modeling of buried InAs quantum dots on GaAs and InP substrates. Journal of Applied Physics, 90 (4). 1784-1787 doi:10.1063/1.1384861
Plain TextMcCaffrey, J. P., Robertson, M. D., Poole, P. J., Riel, B. J., Fafard, S. (2001) Interpretation and modeling of buried InAs quantum dots on GaAs and InP substrates. Journal of Applied Physics, 90 (4). 1784-1787 doi:10.1063/1.1384861
In(2001, August) Journal of Applied Physics Vol. 90 (4) AIP Publishing

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Fafard, S., Spanner, M., McCaffrey, J. P., Wasilewski, Z. R. (2000) Coupled InAs/GaAs quantum dots with well-defined electronic shells. Applied Physics Letters, 76 (16). 2268-2270 doi:10.1063/1.126317
Fafard, S., Wasilewski, Z., McCaffrey, J., Raymond, S., Charbonneau, S. (1996) InAs self‐assembled quantum dots on InP by molecular beam epitaxy. Applied Physics Letters, 68 (7). 991-993 doi:10.1063/1.116122
Allen, C. Nı̀., Poole, P. J., Marshall, P., Fraser, J., Raymond, S., Fafard, S. (2002) InAs self-assembled quantum-dot lasers grown on (100) InP. Applied Physics Letters, 80 (19). 3629-3631 doi:10.1063/1.1479200
Dion, C., Desjardins, P., Schiettekatte, F., Chicoine, M., Robertson, M. D., Shtinkov, N., Poole, P. J., Wu, X., Raymond, S. (2008) Vacancy-mediated intermixing in InAs/InP(001) quantum dots subjected to ion implantation. Journal of Applied Physics, 104 (4). 43527pp. doi:10.1063/1.2970093
McCaffrey, J. P., Robertson, M. D., Fafard, S., Wasilewski, Z. R., Griswold, E. M., Madsen, L. D. (2000) Determination of the size, shape, and composition of indium-flushed self-assembled quantum dots by transmission electron microscopy. Journal of Applied Physics, 88 (5). 2272-2277 doi:10.1063/1.1287226
Dion, C., Desjardins, P., Shtinkov, N., Robertson, M. D., Schiettekatte, F., Poole, P. J., Raymond, S. (2008) Intermixing during growth of InAs self-assembled quantum dots in InP: A photoluminescence and tight-binding investigation. Physical Review B, 77 (7) doi:10.1103/physrevb.77.075338
Riel, B.J, Hinzer, K, Moisa, S, Fraser, J, Finnie, P, Piercy, P, Fafard, S, Wasilewski, Z.R (2002) InAs/GaAs(100) self-assembled quantum dots: arsenic pressure and capping effects. Journal of Crystal Growth, 236 (1). 145-154 doi:10.1016/s0022-0248(01)02391-0
Dalacu, D., Poitras, D., Lefebvre, J., Poole, P. J., Aers, G. C., Williams, R. L. (2003) InAs/InP quantum dots in SiO2/Ta2O5-based microcavities. Applied Physics Letters, 82 (26). 4803-4805 doi:10.1063/1.1588369
Chithrani, D., Williams, R. L., Lefebvre, J., Poole, P. J., Aers, G. C. (2004) Optical spectroscopy of single, site-selected, InAs/InP self-assembled quantum dots. Applied Physics Letters, 84 (6). 978-980 doi:10.1063/1.1646455
Reimer, M. E., Dalacu, D., Lapointe, J., Poole, P. J., Kim, D., Aers, G. C., McKinnon, W. R., Williams, R. L. (2009) Single electron charging in deterministically positioned InAs/InP quantum dots. Applied Physics Letters, 94 (1). 11108pp. doi:10.1063/1.3063048
Kim, D., Lefebvre, J., Mckee, J., Studenikin, S., Williams, R. L., Sachrajda, A., Zawadzki, P., Hawrylak, P., Sheng, W., Aers, G. C., Poole, P. J. (2005) Photoluminescence of single, site-selected, InAs∕InP quantum dots in high magnetic fields. Applied Physics Letters, 87 (21). 212105pp. doi:10.1063/1.2135377
 
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