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Shlimak, I., Friedland, K.-J., Ginodman, V., Kravchenko, S.V. (2006) Disorder-induced features of the transverse resistance in a Si-MOSFET in the quantum Hall effect regime. physica status solidi (c), 3 (2). 309-312 doi:10.1002/pssc.200562743

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Reference TypeJournal (article/letter/editorial)
TitleDisorder-induced features of the transverse resistance in a Si-MOSFET in the quantum Hall effect regime
Journalphysica status solidi (c)
AuthorsShlimak, I.Author
Friedland, K.-J.Author
Ginodman, V.Author
Kravchenko, S.V.Author
Year2006 (February)Volume3
Issue2
PublisherWiley
DOIdoi:10.1002/pssc.200562743Search in ResearchGate
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Mindat Ref. ID5111488Long-form Identifiermindat:1:5:5111488:6
GUID0
Full ReferenceShlimak, I., Friedland, K.-J., Ginodman, V., Kravchenko, S.V. (2006) Disorder-induced features of the transverse resistance in a Si-MOSFET in the quantum Hall effect regime. physica status solidi (c), 3 (2). 309-312 doi:10.1002/pssc.200562743
Plain TextShlimak, I., Friedland, K.-J., Ginodman, V., Kravchenko, S.V. (2006) Disorder-induced features of the transverse resistance in a Si-MOSFET in the quantum Hall effect regime. physica status solidi (c), 3 (2). 309-312 doi:10.1002/pssc.200562743
In(2006, February) physica status solidi (c) Vol. 3 (2) Wiley

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Shlimak, I., Friedland, K.-J., Kravchenko, S. V., Ginodman, V., Butenko, A., Klapwijk, T. M. (2008) Longitudinal resistivity in the quantum Hall effect regime in a split-gate Si MOSFET with variable electron density. physica status solidi (c), 5 (3). 839-841 doi:10.1002/pssc.200777585
Shlimak, I., Ginodman, V., Friedland, K.-J., Kravchenko, S. V. (2006) Manifestation of the exchange enhancement of valley splitting in the quantum Hall effect regime. Physical Review B, 73 (20) doi:10.1103/physrevb.73.205324
Shlimak, I, Ginodman, V, Gerber, A. B, Milner, A, Friedland, K.-J, Paul, D. J (2005) Transverse “resistance overshoot” in a Si/SiGe two-dimensional electron gas in the quantum Hall effect regime. Europhysics Letters (EPL), 69. 997-1002 doi:10.1209/epl/i2004-10454-4
Shlimak, I., Ginodman, V., Butenko, A., Friedland, K.-J., Kravchenko, S. V. (2008) Electron transport in a slot-gate Si MOSFET. EPL (Europhysics Letters), 82. 47001pp. doi:10.1209/0295-5075/82/47001
Shlimak, I., Golosov, D.I., Butenko, A., Friedland, K.-J., Kravchenko, S.V. (2009) Conductance asymmetry of a slot gate Si-MOSFET in a strong parallel magnetic field. Annalen der Physik, 18. 913-917 doi:10.1002/andp.200910400
Friedland, K.-J., Hey, R., Riedel, A., Maude, D. K. (2010) Static skin effect in the quantum Hall regime for high-mobility electrons on a cylindrical surface. physica status solidi (c), 7 (10). 2562-2565 doi:10.1002/pssc.200983892
Shlimak, I., Ginodman, V., Levin, M., Potemski, M., Maude, D. K., Gerber, A., Milner, A., Paul, D. J. (2004) Conductivity of weakly and strongly localized electrons in an-type Si/SiGe heterostructure. physica status solidi (c), 1 (1). 67-70 doi:10.1002/pssc.200303643
Levin, M., Lu, Tie-Cheng, Shlimak, I., Ginodman, V., Resnick, L., Sandomirskii, V., Friedland, K.-J., Hey, R. (2002) Low-Temperature Saturation of 2D Variable-Range-Hopping Conductivity Induced by the Gate Covering the Mesa Edge. physica status solidi (b), 230 (1). 217-220 doi:10.1002/1521-3951(200203)230:1<217::aid-pssb217>3.0.co;2-#
Sohrmann, Christoph, Römer, Rudolf A. (2006) Compressibility in the integer Quantum Hall Effect within Hartree-Fock approximation. physica status solidi (c), 3 (2). 313-316 doi:10.1002/pssc.200562744
Kretinin, A. V., Roshko, S. H., Savchenko, A. K., Mayorov, A. S., Kvon, Z. D. (2006) 1/f noise near the “metal-to-insulator transition” in the 2DEG in a Si-MOSFET. physica status solidi (c), 3 (2). 339-342 doi:10.1002/pssc.200562755
Shlimak, I., Butenko, A., Golosov, D. I., Friedland, K.-J., Kravchenko, S. V. (2012) Influence of spin polarization on resistivity of a two-dimensional electron gas in Si MOSFET at metallic densities. EPL (Europhysics Letters), 97. 37002pp. doi:10.1209/0295-5075/97/37002
 
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