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Kretinin, A. V., Roshko, S. H., Savchenko, A. K., Mayorov, A. S., Kvon, Z. D. (2006) 1/f noise near the “metal-to-insulator transition” in the 2DEG in a Si-MOSFET. physica status solidi (c), 3 (2). 339-342 doi:10.1002/pssc.200562755

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Reference TypeJournal (article/letter/editorial)
Title1/f noise near the “metal-to-insulator transition” in the 2DEG in a Si-MOSFET
Journalphysica status solidi (c)
AuthorsKretinin, A. V.Author
Roshko, S. H.Author
Savchenko, A. K.Author
Mayorov, A. S.Author
Kvon, Z. D.Author
Year2006 (February)Volume3
Issue2
PublisherWiley
DOIdoi:10.1002/pssc.200562755Search in ResearchGate
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Mindat Ref. ID5111503Long-form Identifiermindat:1:5:5111503:4
GUID0
Full ReferenceKretinin, A. V., Roshko, S. H., Savchenko, A. K., Mayorov, A. S., Kvon, Z. D. (2006) 1/f noise near the “metal-to-insulator transition” in the 2DEG in a Si-MOSFET. physica status solidi (c), 3 (2). 339-342 doi:10.1002/pssc.200562755
Plain TextKretinin, A. V., Roshko, S. H., Savchenko, A. K., Mayorov, A. S., Kvon, Z. D. (2006) 1/f noise near the “metal-to-insulator transition” in the 2DEG in a Si-MOSFET. physica status solidi (c), 3 (2). 339-342 doi:10.1002/pssc.200562755
In(2006, February) physica status solidi (c) Vol. 3 (2) Wiley

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