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Schulze, F., Dadgar, A., Bertram, F., Bläsing, J., Diez, A., Veit, P., Clos, R., Christen, J., Krost, A. (2007) Blue light emitting diodes on Si(001) grown by MOVPE. physica status solidi (c), 4 (1). 1 doi:10.1002/pssc.200790000

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Reference TypeJournal (article/letter/editorial)
TitleBlue light emitting diodes on Si(001) grown by MOVPE
Journalphysica status solidi (c)
AuthorsSchulze, F.Author
Dadgar, A.Author
Bertram, F.Author
Bläsing, J.Author
Diez, A.Author
Veit, P.Author
Clos, R.Author
Christen, J.Author
Krost, A.Author
Year2007 (January)Volume4
Issue1
PublisherWiley
DOIdoi:10.1002/pssc.200790000Search in ResearchGate
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Mindat Ref. ID5113002Long-form Identifiermindat:1:5:5113002:4
GUID0
Full ReferenceSchulze, F., Dadgar, A., Bertram, F., Bläsing, J., Diez, A., Veit, P., Clos, R., Christen, J., Krost, A. (2007) Blue light emitting diodes on Si(001) grown by MOVPE. physica status solidi (c), 4 (1). 1 doi:10.1002/pssc.200790000
Plain TextSchulze, F., Dadgar, A., Bertram, F., Bläsing, J., Diez, A., Veit, P., Clos, R., Christen, J., Krost, A. (2007) Blue light emitting diodes on Si(001) grown by MOVPE. physica status solidi (c), 4 (1). 1 doi:10.1002/pssc.200790000
In(2007, January) physica status solidi (c) Vol. 4 (1) Wiley

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Schulze, F., Dadgar, A., Bertram, F., Bläsing, J., Diez, A., Veit, P., Clos, R., Christen, J., Krost, A. (2007) Blue light emitting diodes on Si(001) grown by MOVPE. physica status solidi (c), 4 (1). 41-44 doi:10.1002/pssc.200673534
Schulze, F., Dadgar, A., Krtschil, A., Hums, C., Reissmann, L., Diez, A., Christen, J., Krost, A. (2008) MOVPE growth of blue InxGa1–xN/GaN LEDs on 150 mm Si(001). physica status solidi (c), 5 (6). 2238-2240 doi:10.1002/pssc.200778643
Schulze, F., Dadgar, A., Bläsing, J., Diez, A., Krost, A. (2006) Metalorganic vapor phase epitaxy grown InGaN∕GaN light-emitting diodes on Si(001) substrate. Applied Physics Letters, 88 (12). 121114pp. doi:10.1063/1.2188383
Schulze, F., Kisel, O., Dadgar, A., Krtschil, A., Bläsing, J., Kunze, M., Daumiller, I., Hempel, T., Diez, A., Clos, R., Christen, J., Krost, A. (2007) Crystallographic and electric properties of MOVPE-grown AlGaN/GaN-based FETs on Si(001) substrates. Journal of Crystal Growth, 299 (2). 399-403 doi:10.1016/j.jcrysgro.2006.11.264
Krost, A., Dadgar, A., Schulze, F., Bläsing, J., Strassburger, G., Clos, R., Diez, A., Veit, P., Hempel, T., Christen, J. (2005) In situ monitoring of the stress evolution in growing group-III-nitride layers. Journal of Crystal Growth, 275 (1). 209-216 doi:10.1016/j.jcrysgro.2004.10.090
Wieneke, Matthias, Bläsing, Jürgen, Dadgar, Armin, Veit, Peter, Metzner, Sebastian, Bertram, Frank, Christen, Jürgen, Krost, Alois (2009) Micro-structural anisotropy of a-plane GaN analyzed by high resolution X-ray diffraction. physica status solidi (c), 6. doi:10.1002/pssc.200880964
M��ki, J.-M., Tuomisto, F., Bastek, B., Bertam, F., Christen, J., Dadgar, A., Krost, A. (2009) Effect of growth conditions on vacancy defects in MOVPE grown AlN thin layers. physica status solidi (c), 6 (11). 2575-2577 doi:10.1002/pssc.200982108
Schulze, F., Dadgar, A., Bläsing, J., Hempel, T., Diez, A., Christen, J., Krost, A. (2006) Growth of single-domain GaN layers on Si(001) by metalorganic vapor-phase epitaxy. Journal of Crystal Growth, 289 (2). 485-488 doi:10.1016/j.jcrysgro.2005.12.073
Dadgar, A, Schulze, F, Wienecke, M, Gadanecz, A, Bläsing, J, Veit, P, Hempel, T, Diez, A, Christen, J, Krost, A (2007) Epitaxy of GaN on silicon—impact of symmetry and surface reconstruction. New Journal of Physics, 9. 389 doi:10.1088/1367-2630/9/10/389
Tripathy, S., Dadgar, A., Zang, K. Y., Lin, V. K. X., Liu, Y. C., Teo, S. L., Yong, A. M., Soh, C. B., Chua, S. J., Bläsing, J., Christen, J., Krost, A. (2009) GaN-based deep green light emitting diodes on silicon-on-insulator substrates. physica status solidi (c), 6. doi:10.1002/pssc.200880778
Poschenrieder, M., Schulze, F., Bläsing, J., Dadgar, A., Diez, A., Christen, J., Krost, A. (2002) Bright blue to orange photoluminescence emission from high-quality InGaN/GaN multiple-quantum-wells on Si(111) substrates. Applied Physics Letters, 81 (9). 1591-1593 doi:10.1063/1.1502909
 
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