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M��ki, J.-M., Tuomisto, F., Bastek, B., Bertam, F., Christen, J., Dadgar, A., Krost, A. (2009) Effect of growth conditions on vacancy defects in MOVPE grown AlN thin layers. physica status solidi (c), 6 (11). 2575-2577 doi:10.1002/pssc.200982108

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Reference TypeJournal (article/letter/editorial)
TitleEffect of growth conditions on vacancy defects in MOVPE grown AlN thin layers
Journalphysica status solidi (c)
AuthorsM��ki, J.-M.Author
Tuomisto, F.Author
Bastek, B.Author
Bertam, F.Author
Christen, J.Author
Dadgar, A.Author
Krost, A.Author
Year2009 (November)Volume6
Issue11
PublisherWiley
DOIdoi:10.1002/pssc.200982108Search in ResearchGate
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Mindat Ref. ID5117934Long-form Identifiermindat:1:5:5117934:2
GUID0
Full ReferenceM��ki, J.-M., Tuomisto, F., Bastek, B., Bertam, F., Christen, J., Dadgar, A., Krost, A. (2009) Effect of growth conditions on vacancy defects in MOVPE grown AlN thin layers. physica status solidi (c), 6 (11). 2575-2577 doi:10.1002/pssc.200982108
Plain TextM��ki, J.-M., Tuomisto, F., Bastek, B., Bertam, F., Christen, J., Dadgar, A., Krost, A. (2009) Effect of growth conditions on vacancy defects in MOVPE grown AlN thin layers. physica status solidi (c), 6 (11). 2575-2577 doi:10.1002/pssc.200982108
In(2009, November) physica status solidi (c) Vol. 6 (11) Wiley

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Ruiz-Zepeda, F., Contreras, O., Dadgar, A., Krost, A. (2008) GaN growth on silane exposed AlN seed layers. physica status solidi (c), 5 (6). 1675-1677 doi:10.1002/pssc.200778583
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