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Thapa, S. B., Hertkorn, J., Scholz, F., Prinz, G. M., Feneberg, M., Schirra, M., Thonke, K., Sauer, R., Biskupek, J., Kaiser, U. (2008) MOVPE growth of high quality AlN layers and effects of Si doping. physica status solidi (c), 5 (6). 1774-1776 doi:10.1002/pssc.200778634

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Reference TypeJournal (article/letter/editorial)
TitleMOVPE growth of high quality AlN layers and effects of Si doping
Journalphysica status solidi (c)
AuthorsThapa, S. B.Author
Hertkorn, J.Author
Scholz, F.Author
Prinz, G. M.Author
Feneberg, M.Author
Schirra, M.Author
Thonke, K.Author
Sauer, R.Author
Biskupek, J.Author
Kaiser, U.Author
Year2008 (May)Volume5
Issue6
PublisherWiley
DOIdoi:10.1002/pssc.200778634Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5116369Long-form Identifiermindat:1:5:5116369:7
GUID0
Full ReferenceThapa, S. B., Hertkorn, J., Scholz, F., Prinz, G. M., Feneberg, M., Schirra, M., Thonke, K., Sauer, R., Biskupek, J., Kaiser, U. (2008) MOVPE growth of high quality AlN layers and effects of Si doping. physica status solidi (c), 5 (6). 1774-1776 doi:10.1002/pssc.200778634
Plain TextThapa, S. B., Hertkorn, J., Scholz, F., Prinz, G. M., Feneberg, M., Schirra, M., Thonke, K., Sauer, R., Biskupek, J., Kaiser, U. (2008) MOVPE growth of high quality AlN layers and effects of Si doping. physica status solidi (c), 5 (6). 1774-1776 doi:10.1002/pssc.200778634
In(2008, May) physica status solidi (c) Vol. 5 (6) Wiley


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