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(2008, May) physica status solidi (c) Vol. 5 (6) Wiley

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Reference TypeJournal (issue)
Journalphysica status solidi (c)
Year2008 (May)Volume5
Issue<   6   >
PublisherWiley
Mindat Ref. ID5115997Long-form Identifiermindat:1:5:5115997:7
GUID0
Full Reference(2008, May) physica status solidi (c) Vol. 5 (6) Wiley
Plain Text(2008, May) physica status solidi (c) Vol. 5 (6) Wiley
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Ive, T., Ben-Yaacov, T., Asamizu, H., Van de Walle, C. G., Mishra, U., DenBaars, S. P., Speck, J. S. (2008) Properties of ZnO(0001) layers grown by metalorganic chemical vapor deposition on GaN(0001) templates. physica status solidi (c), 5 (6). doi:10.1002/pssc.200890006
(2008) physica status solidi (c), 5 (6). Wiley. doi:10.1002/pssc.v5:6
(2008) Contents: phys. stat. sol. (c) 5/6. physica status solidi (c), 5 (6). 1447-1469 doi:10.1002/pssc.200860018
Nakamura, Shuji, Mishra, Umesh, DenBaars, Steven, Speck, James S., Wraback, Mike, Arakawa, Yasuhiko, Allerman, Andrew, Grandjean, Nicholas, Shealy, Jeff, Krames, Mike, Palacios, Tomas, Jena, Debdeep (2008) Preface: phys. stat. sol. (c) 5/6. physica status solidi (c), 5 (6). 1472-1474 doi:10.1002/pssc.200860019
Oliver, R. A., Kappers, M. J., Humphreys, C. J. (2008) Gross well-width fluctuations in InGaN quantum wells. physica status solidi (c), 5 (6). 1475-1481 doi:10.1002/pssc.200778557
Emiroglu, D., Evans-Freeman, J., Kappers, M. J., McAleese, C., Humphreys, C. J. (2008) High resolution Laplace deep level transient spectroscopy studies of electron and hole traps in n-type GaN. physica status solidi (c), 5 (6). 1482-1484 doi:10.1002/pssc.200778408
Franssen, G., Suski, T., Kryƛko, M., Ɓucznik, B., Grzegory, I., Krukowski, S., Khachapuridze, A., Czernecki, R., Grzanka, S., Mensz, P., LeszczyƄski, M., Porowski, S., Albrecht, M. (2008) Influence of substrate misorientation on properties of InGaN layers grown on freestanding GaN. physica status solidi (c), 5 (6). 1485-1487 doi:10.1002/pssc.200778409
Franssen, G., KamiƄska, A., Suski, T., Gorczyca, I., Christensen, N. E., Svane, A., Lu, H., Schaff, W. J., Dimakis, E., Georgakilas, A., Che, S.B., Ishitani, Y., Yoshikawa, A. (2008) Conduction band filling in In-rich InGaN and InN under hydrostatic pressure. physica status solidi (c), 5 (6). 1488-1490 doi:10.1002/pssc.200778410
Jetter, Michael, Michler, Peter (2008) Pulsed layer growth of AlInGaN nanostructures. physica status solidi (c), 5 (6). 1491-1494 doi:10.1002/pssc.200778412
Shi, Junxia, Chandrashekhar, M. V. S., Reiherzer, Jesse, Schaff, William, Lu, Jie, Disalvo, Francis, Spencer, Michael (2008) High intensity red emission from Eu doped GaN powders. physica status solidi (c), 5 (6). 1495-1498 doi:10.1002/pssc.200778413
Fu, Y. K., Tun, C. J., Kuo, C. H. (2008) Dislocation annihilation in GaN with multiple MgxNy/GaN buffer layers by metal organic chemical vapor deposition. physica status solidi (c), 5 (6). 1499-1501 doi:10.1002/pssc.200778419
Bickermann, M., Epelbaum, B. M., Filip, O., Heimann, P., Nagata, S., Winnacker, A. (2008) Structural properties of aluminum nitride bulk single crystals grown by PVT. physica status solidi (c), 5 (6). 1502-1504 doi:10.1002/pssc.200778422
Wakamiya, Y., Hasegawa, F., Kawanishi, H. (2008) Investigation on conductivity at the GaN/AlN/SiC substrate interface for vertical nitride power FETs. physica status solidi (c), 5 (6). 1505-1507 doi:10.1002/pssc.200778426
Fang, Z.-Q., Claflin, B., Look, D. C., Elhamri, S., Smith, H. E., Mitchel, W. C., Hanser, D., Preble, E. A., Evans, K. R. (2008) Deep centers in semi-insulating Fe-doped native GaN substrates grown by hydride vapour phase epitaxy. physica status solidi (c), 5 (6). 1508-1511 doi:10.1002/pssc.200778430
Kumagai, Y., Nagashima, T., Murakami, H., Takada, K., Koukitu, A. (2008) Characterization of a freestanding AlN substrate prepared by hydride vapor phase epitaxy. physica status solidi (c), 5 (6). 1512-1514 doi:10.1002/pssc.200778432
Tajima, J., Kubota, Y., Togashi, R., Murakami, H., Kumagai, Y., Koukitu, A. (2008) Growth of thin protective AlN layers on sapphire substrates at 1065 °C for hydride vapor phase epitaxy of AlN above 1300 °C. physica status solidi (c), 5 (6). 1515-1517 doi:10.1002/pssc.200778433
Togashi, R., Kamoshita, T., Nishizawa, Y., Murakami, H., Kumagai, Y., Koukitu, A. (2008) Experimental andab-initio studies of temperature dependent InN decomposition in various ambient. physica status solidi (c), 5 (6). 1518-1521 doi:10.1002/pssc.200778434
Liu, Yu-Huai, Koide, Shinya, Miyake, Hideto, Hiramatsu, Kazumasa, Nakamura, Atsushi, Nambu, Nobuyoshi (2008) Thermal analysis of GaN powder formation via reaction of gallium ethylenediamine tetraacetic acid complexes with ammonia. physica status solidi (c), 5 (6). 1522-1524 doi:10.1002/pssc.200778436
Takeuchi, H., Shirahama, T., Yamamoto, Y., Kamo, Y., Kunii, T., Oku, T., Tanaka, H., Nakayama, M. (2008) High sensitivity of photoluminescence- excitation spectroscopy for probing effects of plasma-induced surface damages on carrier transport in AlxGa1–xN/GaN heterostructures. physica status solidi (c), 5 (6). 1525-1528 doi:10.1002/pssc.200778437
Wang, X. J., Buyanova, I. A., Chen, W. M., Hong, Y. G., Tu, C. W. (2008) Effects of grown-in defects on electron spin polarization in dilute nitride alloys. physica status solidi (c), 5 (6). 1529-1531 doi:10.1002/pssc.200778444
Kimura, S., Emura, S., Tokuda, K., Hiromura, Y., Hayakawa, S., Zhou, Y. K., Hasegawa, S., Asahi, H. (2008) Growth and characterization of InCrN and (In,Ga,Cr)N. physica status solidi (c), 5 (6). 1532-1535 doi:10.1002/pssc.200778447
Lin, Kung-Liang, Chang, Edward-Yi, Huang, Jui-Chien, Huang, Wei-Ching, Hsiao, Yu-Lin, Chiang, Chen-Hao, Li, Tingkai, Tweet, Doug, Maa, Jer-Shen, Hsu, Sheng-Teng (2008) MOVPE high quality GaN film grown on Si (111) substrates using a multilayer AlN buffer. physica status solidi (c), 5 (6). 1536-1538 doi:10.1002/pssc.200778454
Bockowski, M., Strak, P., Kempisty, P., Grzegory, I., Lucznik, B., Krukowski, S., Porowski, S. (2008) Liquid phase epitaxy of GaN on MOCVD GaN/sapphire and HVPE free-standing substrates under high nitrogen pressure. physica status solidi (c), 5 (6). 1539-1542 doi:10.1002/pssc.200778462
Rost, H.-J., Siche, D., Böttcher, K., Gogova, D., Fornari, R. (2008) Growth of single crystalline GaN from chlorine-free gas phase. physica status solidi (c), 5 (6). 1543-1546 doi:10.1002/pssc.200778463
Veis, M., Hagihara, K., Nakagawa, S., Inoue, Y., Ishida, A. (2008) AlN/GaN superlattice quality improvement by using multiple superlattice structure. physica status solidi (c), 5 (6). 1547-1549 doi:10.1002/pssc.200778464
Mitchel, W. C., Elhamri, S., Landis, G., Gaska, R., Schujman, S. B., Schowalter, L. J. (2008) Electrical characterization of AlGaN/GaN on AlN substrates. physica status solidi (c), 5 (6). 1550-1552 doi:10.1002/pssc.200778470
Mauder, C., Khoshroo, L. Rahimzadeh, Rzheutski, M. V., Lutsenko, E. V., Yablonskii, G., Kozlovsky, V. I., Woitok, J., Dikme, Y., Heuken, M., Kalisch, H., Jansen, R. H. (2008) MOVPE growth and investigation of AlInN/AlN multiple quantum wells. physica status solidi (c), 5 (6). 1553-1555 doi:10.1002/pssc.200778474
Tchernycheva, M., Sartel, C., Cirlin, G., Travers, L., Patriarche, G., Largeau, L., Mauguin, O., Harmand, J.-C., Dang, Le Si, Renard, J., Gayral, B., Nevou, L., Julien, F. (2008) GaN/AlN free-standing nanowires grown by molecular beam epitaxy. physica status solidi (c), 5 (6). 1556-1558 doi:10.1002/pssc.200778479
Kato, Naofumi, Sato, S., Sugimura, H., Sumii, T., Okada, N., Imura, M., Iwaya, M., Kamiyama, S., Amano, H., Akasaki, I., Maruyama, H., Takagi, T., Bandoh, A. (2008) Growth of high-quality thick AlGaN by high-temperature metalorganic vapor phase epitaxy. physica status solidi (c), 5 (6). 1559-1561 doi:10.1002/pssc.200778480
Lazić, S., Gallardo, E., Calleja, J.M., Agulló-Rueda, F., Grandal, J., Sánchez-García, M.A., Calleja, E. (2008) Raman scattering by coupled plasmon-LO phonons in InN nanocolumns. physica status solidi (c), 5 (6). 1562-1564 doi:10.1002/pssc.200778488
Ougazzaden, A., Moudakir, T., Aggerstam, T., Orsal, G., Salvestrini, J. P., Gautier, S., Sirenko, A. A. (2008) GaN thin films onz- andx -cut LiNbO3 substrates by MOVPE. physica status solidi (c), 5 (6). 1565-1567 doi:10.1002/pssc.200778490
Tahtamouni, T. Al, Sedhain, A., Lin, J. Y., Jiang, H. X. (2008) Growth and optical properties of a-plane AlN and Al rich AlN/AlxGa1–xN quantum wells grown on r-plane sapphire substrates. physica status solidi (c), 5 (6). 1568-1570 doi:10.1002/pssc.200778491
Houchin, Y., Hashimoto, A., Yamamoto, A. (2008) Atmospheric-pressure MOVPE growth of In-rich InAlN. physica status solidi (c), 5 (6). 1571-1574 doi:10.1002/pssc.200778499
Iida, Daisuke, Kawashima, Takeshi, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu (2008) Sidewall epitaxial lateral overgrowth of nonpolar a-plane GaN by metalorganic vapor phase epitaxy. physica status solidi (c), 5 (6). 1575-1578 doi:10.1002/pssc.200778502
Inoue, T., Iwahashi, Y., Oishi, S., Orihara, M., Hijikata, Y., Yaguchi, H., Yoshida, S. (2008) Photoluminescence of cubic InN films on MgO (001) substrates. physica status solidi (c), 5 (6). 1579-1581 doi:10.1002/pssc.200778505
Imura, M., Sugimura, H., Okada, N., Iwaya, M., Kamiyama, S., Amano, H., Akasaki, I., Bando, A. (2008) Microstructure of threading dislocations caused by grain boundaries in AlN on sapphire substrates. physica status solidi (c), 5 (6). 1582-1584 doi:10.1002/pssc.200778506
Zang, K. Y., Chua, S. J. (2008) Orders of magnitude reduction in dislocation density in GaN grown on Si (111) by nano lateral epitaxial overgrowth. physica status solidi (c), 5 (6). 1585-1588 doi:10.1002/pssc.200778509
Chua, S. J., Zhou, Hailong, Srolovitz, D. J., Du, Danxu (2008) Anisotropic coalescence behaviors of GaN islands grown by metal-organic chemical vapor deposition. physica status solidi (c), 5 (6). 1589-1593 doi:10.1002/pssc.200778512
Chang, P. H., Wei, Y. Y., Chen, C. W., Peng, H. C., Ling, D. C., Chen, N. C., Chang, C. A. (2008) Growth and characterization of InN thin film by metal-organic vapor phase epitaxy (MOVPE) on different buffers. physica status solidi (c), 5 (6). 1594-1599 doi:10.1002/pssc.200778515
Cheng, Kai, Leys, M., Derluyn, J., Balachander, K., Degroote, S., Germain, M., Borghs, G. (2008) AlGaN-based heterostructures grown on 4 inch Si(111) by MOVPE. physica status solidi (c), 5 (6). 1600-1602 doi:10.1002/pssc.200778518
Ecke, G., Wang, Ch. Y., Cimalla, V., Ambacher, O. (2008) Ozone and UV assisted oxidation of InN surfaces. physica status solidi (c), 5 (6). 1603-1605 doi:10.1002/pssc.200778519
Yamada, Norihide, Imade, Mamoru, Kitano, Yoshihiro, Kawamura, Fumio, Yoshimura, Masashi, Kitaoka, Yasuo, Sasaki, Takatomo, Mori, Yusuke (2008) The effects of growth temperature on the crystallinity of GaN in gallium hydride vapor phase epitaxy method. physica status solidi (c), 5 (6). 1606-1608 doi:10.1002/pssc.200778520
NiebelschĂŒtz, M., Cimalla, V., Ambacher, O., Machleidt, T., Franke, K.-H., Ristic, J., Grandal, J., SĂĄnchez-GarcĂ­a, M. A., Calleja, E. (2008) Space charged region in GaN and InN nanocolumns investigated by atomic force microscopy. physica status solidi (c), 5 (6). 1609-1611 doi:10.1002/pssc.200778533
Chemekova, T. Yu., Avdeev, O. V., Barash, I. S., Mokhov, E. N., Nagalyuk, S. S., Roenkov, A. D., Segal, A. S., Makarov, Yu. N., Ramm, M. G., Davis, S., Huminic, G., Helava, H. (2008) Sublimation growth of 2 inch diameter bulk AlN crystals. physica status solidi (c), 5 (6). 1612-1614 doi:10.1002/pssc.200778534
Ng, W. N., Wang, X. H., Leung, C. H., Lai, P. T., Choi, H. W. (2008) Nanopatterning GaN with microspheres. physica status solidi (c), 5 (6). 1615-1617 doi:10.1002/pssc.200778540
Yu, Hongbo, Jung, Taeil, Ku, P. C. (2008) Fabrication and optical properties of nano-structured semipolar InGaN/GaN quantum wells on c-plane GaN template. physica status solidi (c), 5 (6). 1618-1620 doi:10.1002/pssc.200778541
Komissarova, T. A., Plotnikov, D. S., Jmerik, V. N., Shubina, T. V., Mizerov, A. M., Semenov, A. N., Ivanov, S. V., Ryabova, L. I., Khokhlov, D. R. (2008) Electrical properties and optical absorption in InN:In structures. physica status solidi (c), 5 (6). 1621-1623 doi:10.1002/pssc.200778543
Cheng, Kai, Motsnyi, V., Leys, M., Degroote, S., Sijmus, B., Germain, M., Borghs, G. (2008) Epitaxial lateral overgrowth of GaN on 4 inch Si(111) by MOVPE. physica status solidi (c), 5 (6). 1624-1626 doi:10.1002/pssc.200778547
Wang, Ch. Y., Cimalla, V., Lebedev, V., Kups, Th., Ecke, G., Hauguth, S., Ambacher, O., Lozano, J. G., Morales, F. M., GonzĂĄlez, D. (2008) InN/In2O3 heterostructures. physica status solidi (c), 5 (6). 1627-1629 doi:10.1002/pssc.200778549
Lee, Dong Uk, Ha, Lim-Kyoung, Kim, Jin Soak, Kim, Eun Kyu, Koh, Eui Kwan, Han, Il Ki (2008) Dislocation related defect states in GaN irradiated with 1 MeV electron-beam. physica status solidi (c), 5 (6). 1630-1632 doi:10.1002/pssc.200778552
Won, Yong Sun, Kim, Young Seok, Kryliouk, Olga, Anderson, Tim (2008) Growth mechanism of catalyst- and template-free InN nanorods. physica status solidi (c), 5 (6). 1633-1638 doi:10.1002/pssc.200778558
Lai, W. C., Huang, Y. S., Yen, Y. W., Sheu, J. K., Hsueh, T. H, Kuo, C. H., Chang, S. J. (2008) The CL emission observation of the InGaN/GaN MQWs V shaped pits with different superlattices underlayers. physica status solidi (c), 5 (6). 1639-1641 doi:10.1002/pssc.200778559
Gherasoiu, I., O'Steen, M., Bird, T., Gotthold, D., Chandolu, A., Song, D. Y., Xu, S. X., Holtz, M., Nikishin, S. A., Schaff, W. J. (2008) Growth of high quality InN on production style PA-MBE system. physica status solidi (c), 5 (6). 1642-1644 doi:10.1002/pssc.200778561
Meshi, L., Cherns, D., Griffiths, I., Khongphetsak, S., Gott, A., Liu, C., Denchitcharoen, S., Shields, P., Wang, W., Campion, R., Novikov, S., Foxon, T. (2008) The reduction of threading dislocations in GaN using a GaN nanocolumn interlayer. physica status solidi (c), 5 (6). 1645-1647 doi:10.1002/pssc.200778562
Davydov, V. Yu., Klochikhin, A. A., Smirnov, M. B., Kitaev, Yu. E., Smirnov, A. N., Lundina, E. Y., Lu, Hai, Schaff, William J., Lee, H.-M., Lin, H.-W., Hong, Y.-L., Gwo, S. (2008) SIMS and Raman studies of Mg-doped InN. physica status solidi (c), 5 (6). 1648-1651 doi:10.1002/pssc.200778563
Sumner, J., Oliver, R. A., Kappers, M. J., Humphreys, C. J. (2008) Assessment of scanning spreading resistance microscopy for application to n-type GaN. physica status solidi (c), 5 (6). 1652-1654 doi:10.1002/pssc.200778569
O'Malley, S. M., Bonanno, P. L., Wunderer, T., BrĂŒckner, P., Neubert, B., Scholz, F., Kazimirov, A., Sirenko, A. A. (2008) X-ray diffraction studies of selective area grown InGaN/GaN multiple quantum wells on multi-facet GaN ridges. physica status solidi (c), 5 (6). 1655-1658 doi:10.1002/pssc.200778571
Goto, H., Lee, S. W., Lee, H. J., Lee, Hyo-Jong, Ha, J. S., Cho, M. W., Yao, T. (2008) Chemical lift-off of GaN epitaxial films grown on c-sapphire substrates with CrN buffer layers. physica status solidi (c), 5 (6). 1659-1661 doi:10.1002/pssc.200778573
Fuhrmann, D., Jönen, H., Hoffmann, L., Bremers, H., Rossow, U., Hangleiter, A. (2008) High quality, high efficiency and ultrahigh In-content InGaN QWs – the problem of thermal stability. physica status solidi (c), 5 (6). 1662-1664 doi:10.1002/pssc.200778575
Miyajima, Takao, Uemura, Shigeaki, Kudo, Yoshihiro, Kitajima, Yoshinori, Yamamoto, Akio, Muto, Daisuke, Nanishi, Yasushi (2008) Determination of the Mg occupation site in MOCVD- and MBE-grown Mg-doped InN using X-ray absorption fine-structure measurements. physica status solidi (c), 5 (6). 1665-1667 doi:10.1002/pssc.200778580
Ma, Max Xianyun, Jia, Helen Jinghong (2008) EpiEL provides advanced optical characterization for nitride LED epi-wafers. physica status solidi (c), 5 (6). 1668-1670 doi:10.1002/pssc.200778581
Wu, Pei-Lun, Huang, Hsin-Hsiung, Zeng, Hung-Yu, Liu, Po-Chun, Lai, Chih-Ming, Tsay, Jeng-Dar, Lee, Wei-I (2008) Comparison between extended microtunnels along different crystal orientations in GaN. physica status solidi (c), 5 (6). 1671-1674 doi:10.1002/pssc.200778582
Ruiz-Zepeda, F., Contreras, O., Dadgar, A., Krost, A. (2008) GaN growth on silane exposed AlN seed layers. physica status solidi (c), 5 (6). 1675-1677 doi:10.1002/pssc.200778583
Segura-Ruiz, J., Garro, N., Cantarero, A., Denker, C., Werner, F., Malindretos, J., Rizzi, A. (2008) Photoluminescence and Raman spectroscopy of MBE-grown InN nanocolumns. physica status solidi (c), 5 (6). 1678-1681 doi:10.1002/pssc.200778585
Hatakenaka, S., Wakahara, A., Nakanishi, Y., Furukawa, Y., Okada, H., Yonezu, H. (2008) Luminescence properties of GaPN layer grown by OMVPE. physica status solidi (c), 5 (6). 1682-1684 doi:10.1002/pssc.200778586
Cheng, A. T., Su, Y. K., Lai, W. C. (2008) Characterization of Mg-doped AlInN grown by metalorganic vapor phase epitaxy. physica status solidi (c), 5 (6). 1685-1687 doi:10.1002/pssc.200778587
Yakovlev, E. V., Lobanova, A. V., Talalaev, R. A., Watson, I. M., Lorenz, K., Alves, E. (2008) Mechanisms of AlInN growth by MOVPE: modeling and experimental study. physica status solidi (c), 5 (6). 1688-1690 doi:10.1002/pssc.200778588
Kondratyev, A. V., Talalaev, R. A., Segal, A. S., Yakovlev, E. V., Lundin, W. V., Zavarin, E. E., Sinitsyn, M. A., Tsatsulnikov, A. F., Nikolaev, A.E. (2008) Effect of metallic surface coverage on material quality in III-nitride MOVPE. physica status solidi (c), 5 (6). 1691-1694 doi:10.1002/pssc.200778589
Sawada, T., Takahashi, K., Imai, K., Suzuki, K., Kimura, N., Kitamori, K. (2008) Influence of surface preparation and i-AlGaN thickness on electrical properties of i-AlGaN/GaN heterostructures. physica status solidi (c), 5 (6). 1695-1698 doi:10.1002/pssc.200778591
Choe, Hyeokmin, Lee, Sanghwa, Sohn, Yuri, Kim, Chinkyo (2008) In-situ measurement of the strain relaxation of GaN nanograins during X-ray irradiation. physica status solidi (c), 5 (6). 1699-1701 doi:10.1002/pssc.200778593
Tsai, Wen-Che, Lin, Hsuan, Ke, Wen-Chen, Chang, Wen-Hao, Chou, Wu-Ching, Chen, Wei-Kuo, Lee, Ming-Chih (2008) Structural and optical properties of indium-rich InGaN islands. physica status solidi (c), 5 (6). 1702-1705 doi:10.1002/pssc.200778594
Denker, Christian, Malindretos, Joerg, Werner, Florian, Limbach, Friederich, Schuhmann, Henning, Niermann, Tore, Seibt, Michael, Rizzi, Angela (2008) Self-organized growth of InN-nanocolumns on p-Si(111) by MBE. physica status solidi (c), 5 (6). 1706-1708 doi:10.1002/pssc.200778596
Jindal, V., Tripathi, N., Tungare, M., Paschos, O., Haldar, P., Shahedipour-Sandvik, F. (2008) Selective area heteroepitaxy of low dimensionala -plane andc -plane InGaN nanostructures using pulsed MOCVD. physica status solidi (c), 5 (6). 1709-1711 doi:10.1002/pssc.200778599
Nakamura, T., Kataoka, T., Katayama, R., Yamamoto, T., Onabe, K. (2008) RF-MBE growth of cubic InN films on YSZ(001) vicinal substrates. physica status solidi (c), 5 (6). 1712-1714 doi:10.1002/pssc.200778600
Kuboya, S., Takahashi, S., Thieu, Q. T., Nakajima, F., Katayama, R., Onabe, K. (2008) MOVPE growth and photoluminescence properties of InAsN QDs. physica status solidi (c), 5 (6). 1715-1718 doi:10.1002/pssc.200778601
Imade, Mamoru, Yamada, Norihide, Kitano, Yoshihiro, Kawamura, Fumio, Yoshimura, Masashi, Kitaoka, Yasuo, Mori, Yusuke, Sasaki, Takatomo (2008) Increase in the growth rate of GaN single crystals grown by gallium hydride vapor phase epitaxy method. physica status solidi (c), 5 (6). 1719-1722 doi:10.1002/pssc.200778602
Billingsley, Daniel, Pritchett, David, Henderson, Walter, Carver, Alexander G., Burnham, Shawn D., Doolittle, W. Alan (2008) Investigation into the use of molecular hydrogen on the growth of gallium nitride via metal-organic molecular beam epitaxy. physica status solidi (c), 5 (6). 1723-1725 doi:10.1002/pssc.200778603
Pritchett, D., Henderson, W., Billingsley, D., Doolittle, W. A. (2008) InGaN compositional patterning by ultraviolet photoexcitation during NH3-based MOMBE – A pathway to 3D epitaxy. physica status solidi (c), 5 (6). 1726-1729 doi:10.1002/pssc.200778604
Hirano, S., Inoue, T., Shikata, G., Orihara, M., Hijikata, Y., Yaguchi, H., Yoshida, S., Hirabayashi, Y. (2008) Photoluminescence study of hexagonal InN/InGaN quantum well structures grown on 3C-SiC (001) substrates by molecular beam epitaxy. physica status solidi (c), 5 (6). 1730-1732 doi:10.1002/pssc.200778606
Ive, T., Ben-Yaacov, T., Asamizu, H., Van de Walle, C. G., Mishra, U., DenBaars, S. P., Speck, J. S. (2008) Properties of ZnO(0001) layers grown by metalorganic chemical vapor deposition on GaN(0001) templates. physica status solidi (c), 5 (6). 1733-1735 doi:10.1002/pssc.200778612
Wang, Shen-Jie, Li, Nola, Park, Eun-Hyun, Feng, Zhe Chuan, Valencia, Adriana, Nause, Jeff, Kane, Matthew, Summers, Chris, Ferguson, Ian (2008) MOCVD growth of GaN-based materials on ZnO substrates. physica status solidi (c), 5 (6). 1736-1739 doi:10.1002/pssc.200778614
Gupta, Shalini, Kang, Hun, Kane, Matthew H., Park, Eun-Hyun, Ferguson, Ian T. (2008) Growth and magnetization study of transition metal doped GaN nanostructures. physica status solidi (c), 5 (6). 1740-1742 doi:10.1002/pssc.200778615
Datta, R., McAleese, C., Cherns, P., Rayment, F. D. G., Humphreys, C. J. (2008) Origin of additional threading dislocations in AlGaN grown on GaN using AlN as an interlayer. physica status solidi (c), 5 (6). 1743-1745 doi:10.1002/pssc.200778616
Saida, J., Kim, E. H., Hikosaka, T., Honda, Y., Yamaguchi, M., Sawaki, N. (2008) Energy relaxation processes of photo-generated carriers in Mg doped (0001)GaN and (1-101)GaN. physica status solidi (c), 5 (6). 1746-1749 doi:10.1002/pssc.200778620
Arehart, A. R., Corrion, A., Poblenz, C., Speck, J. S., Mishra, U. K., DenBaars, S. P., Ringel, S. A. (2008) Comparison of deep level incorporation in ammonia and rf-plasma assisted molecular beam epitaxy n-GaN films. physica status solidi (c), 5 (6). 1750-1752 doi:10.1002/pssc.200778622
Soh, C. B., Chua, S. J., Sim, S. H., Tripathy, S., Alves, E. (2008) Luminescence and vibrational properties of erbium-implanted nanoporous GaN. physica status solidi (c), 5 (6). 1753-1755 doi:10.1002/pssc.200778623
Perea-Lopez, Nestor, Tao, Jonathan H., McKittrick, Joanna, Talbot, Jan B., Raukas, M., Laski, J., Mishra, K. C., Hirata, Gustavo (2008) Eu3+ activated GaN thin films grown on sapphire by pulsed laser deposition. physica status solidi (c), 5 (6). 1756-1758 doi:10.1002/pssc.200778625
Kurihara, K., Fukui, K., Yanagawa, T., Yamamoto, A. (2008) Infrared micro optical reflectance spectra of InN. physica status solidi (c), 5 (6). 1759-1761 doi:10.1002/pssc.200778628
Yamamoto, A., Sugita, K., Nagai, Y., Hashimoto, A. (2008) Etching and optical deterioration of nitrogen-face of wurtzite InN in NH3 ambient. physica status solidi (c), 5 (6). 1762-1764 doi:10.1002/pssc.200778629
Sugita, K., Nagai, Y., Matsuoka, D., Hashimoto, A., Harima, H., Yamamoto, A. (2008) Marked improvements in electrical and optical properties for MOVPE InN annealed at a low temperature (300 °C) in O2 atmosphere. physica status solidi (c), 5 (6). 1765-1767 doi:10.1002/pssc.200778630
Paskov, P. P., Monemar, B., Iida, D., Kawashima, T., Iwaya, M., Kamiyama, S., Amano, H., Akasaki, I. (2008) Nonpolar GaN layers grown by sidewall epitaxial lateral overgrowth: optical evidences for a reduced stacking fault density. physica status solidi (c), 5 (6). 1768-1770 doi:10.1002/pssc.200778632
Iwao, K., Yamamoto, A., Hashimoto, A. (2008) New nitridation technique for mosaicity control in RF-MBE InN growth. physica status solidi (c), 5 (6). 1771-1773 doi:10.1002/pssc.200778633
Thapa, S. B., Hertkorn, J., Scholz, F., Prinz, G. M., Feneberg, M., Schirra, M., Thonke, K., Sauer, R., Biskupek, J., Kaiser, U. (2008) MOVPE growth of high quality AlN layers and effects of Si doping. physica status solidi (c), 5 (6). 1774-1776 doi:10.1002/pssc.200778634
Zhu, M., Detchprohm, T., You, S., Wang, Y., Xia, Y., Zhao, W., Li, Y., Senawiratne, J., Zhang, Z., Wetzel, C. (2008) V-defect analysis in green and deep green light emitting diode structures. physica status solidi (c), 5 (6). 1777-1779 doi:10.1002/pssc.200778635
Wang, S.-L., Yeh, B.-C., Wu, H.-M., Peng, L.-H., Lai, C.-M., Ko, T.-S., Lu, T.-C., Wang, S.-C., Kung, A.-H. (2008) Optical properties ofa -plane GaN strained by photo-chemically grown gallium hydroxide. physica status solidi (c), 5 (6). 1780-1782 doi:10.1002/pssc.200778636
Hara, K., Mori, T., Komoda, H., Oogi, Y., Kominami, H., Nakanishi, Y. (2008) Fabrication of GaN/AlN bilayer particles by a vapor phase method. physica status solidi (c), 5 (6). 1783-1785 doi:10.1002/pssc.200778637
Johnston, C. F., Kappers, M. J., Barnard, J. S., Humphreys, C. J. (2008) Morphological study of non-polar (11-20) GaN grown on r-plane (1-102) sapphire. physica status solidi (c), 5 (6). 1786-1788 doi:10.1002/pssc.200778638
Kitamura, T., Nakashima, S., Nakamura, N., Furuta, K., Okumura, H. (2008) Raman scattering analysis of GaN with various dislocation densities. physica status solidi (c), 5 (6). 1789-1791 doi:10.1002/pssc.200778640
Syrkin, A. L., Ivantsov, V., Usikov, A., Dmitriev, V. A., Chambard, G., Ruterana, P., Davydov, A. V., Sundaresan, S. G., Lutsenko, E., Mudryi, A. V., Readinger, E. D., Chern-Metcalfe, G. D., Wraback, M. (2008) InN layers grown by the HVPE. physica status solidi (c), 5 (6). 1792-1794 doi:10.1002/pssc.200778646
Liliental-Weber, Z., Hawkridge, M., Mangum, J., Kryliouk, O. (2008) InN nanorods and nanowires grown on different substrates. physica status solidi (c), 5 (6). 1795-1798 doi:10.1002/pssc.200778649
Brunner, F., Protzmann, H., Heuken, M., Knauer, A., Weyers, M., Kneissl, M. (2008) High-temperature growth of AlN in a production scale 11 × 2â€Č MOVPE reactor. physica status solidi (c), 5 (6). 1799-1801 doi:10.1002/pssc.200778658
Zhang, Y., McAleese, C., Xiu, H., Humphreys, C. J., Lieten, R. R., Degroote, S., Borghs, G. (2008) Structural features in GaN grown on a Ge(111) substrate. physica status solidi (c), 5 (6). 1802-1804 doi:10.1002/pssc.200778659
Kohno, M., Nakamura, T., Kataoka, T., Katayama, R., Onabe, K. (2008) Electrical conduction in cubic GaN films grown on GaAs(001) by RF-MBE. physica status solidi (c), 5 (6). 1805-1807 doi:10.1002/pssc.200778661
Shikata, G., Hirano, S., Inoue, T., Orihara, M., Hijikata, Y., Yaguchi, H., Yoshida, S. (2008) Improvement of the surface morphology ofa -plane InN using low-temperature InN buffer layers. physica status solidi (c), 5 (6). 1808-1810 doi:10.1002/pssc.200778662
Wang, Kejia (Albert), Kosel, Thomas, Jena, Debdeep (2008) Structural and transport properties of InN grown on GaN by MBE. physica status solidi (c), 5 (6). 1811-1814 doi:10.1002/pssc.200778664
Wernicke, Tim, Netzel, Carsten, Weyers, Markus, Kneissl, Michael (2008) Semipolar GaN grown on m-plane sapphire using MOVPE. physica status solidi (c), 5 (6). 1815-1817 doi:10.1002/pssc.200778670
Li, Da-Bing, Aoki, Masakazu, Miyake, Hideto, Hiramatsu, Kazumasa (2008) Improved surface morphology of flow-modulated MOVPE grown AlN on sapphire using thin medium-temperature AlN buffer layer. physica status solidi (c), 5 (6). 1818-1821 doi:10.1002/pssc.200778671
Miyake, Hideto, Ishii, Takeharu, Motogaito, Atsushi, Hiramatsu, Kazumasa (2008) Improved optical properties of AlGaN using periodic structures. physica status solidi (c), 5 (6). 1822-1824 doi:10.1002/pssc.200778677
Usikov, A., Soukhoveev, V., Shapovalova, L., Syrkin, A., Kovalenkov, O., Volkova, A., Sizov, V., Ivantsov, V., Dmitriev, V. (2008) New results on HVPE growth of AlN, GaN, InN and their alloys. physica status solidi (c), 5 (6). 1825-1828 doi:10.1002/pssc.200778680
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Mai, D., Niermann, T., Zenneck, J., Roever, M., Pinto, A. Bedoya, Malindretos, J., Seibt, M., Rizzi, A. (2008) Influence of the Mn compositional distribution on the magnetic order in diluted GaMnN layers. physica status solidi (c), 5 (6). 1832-1835 doi:10.1002/pssc.200778689
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Rahimzadeh Khoshroo, L., Mauder, C., Zhang, W., Fieger, M., Eickelkamp, M., Dikme, Y., Woitok, J., Niyamakom, P., Vescan, A., Kalisch, H., Heuken, M., Jansen, R. H. (2008) Optimisation of AlInN/GaN HEMT structures. physica status solidi (c), 5 (6). 2041-2043 doi:10.1002/pssc.200778739
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Peter, M., Laubsch, A., Stauss, P., Walter, A., Baur, J., Hahn, B. (2008) Green ThinGaN power-LED demonstrates 100 lm. physica status solidi (c), 5 (6). 2050-2052 doi:10.1002/pssc.200778554
Reed, Meredith L., Wraback, Michael, Lunev, A., Bilenko, Y., Hu, X., Sattu, A., Deng, J., Shatalov, M., Gaska, R. (2008) Device self-heating effects in deep UV LEDs studied by systematic variation in pulsed current injection. physica status solidi (c), 5 (6). 2053-2055 doi:10.1002/pssc.200778402
Corbett, B., Zhu, D., Roycroft, B., Maaskant, P., Akhter, M., McAleese, C., Kappers, M. J., Humphreys, C. J. (2008) High brightness near-ultraviolet resonant LEDs. physica status solidi (c), 5 (6). 2056-2058 doi:10.1002/pssc.200778405
Wunderer, T., Lipski, F., Hertkorn, J., BrĂŒckner, P., Scholz, F., Feneberg, M., Schirra, M., Thonke, K., Chuvilin, A., Kaiser, U. (2008) Bluish-green semipolar GaInN/GaN light emitting diodes on {101} GaN side facets. physica status solidi (c), 5 (6). 2059-2062 doi:10.1002/pssc.200778406
Lee, Kang Jea, Oh, Tae Su, Suh, Eun Kyung, Shim, Kyu Hwan, Young Lim, Kee (2008) Optical properties of InGaN/GaN MQW microdisk arrays on GaN/Si(111) template. physica status solidi (c), 5 (6). 2063-2065 doi:10.1002/pssc.200778407
Bulashevich, K. A., Karpov, S. Yu. (2008) Is Auger recombination responsible for the efficiency rollover in III-nitride light-emitting diodes?. physica status solidi (c), 5 (6). 2066-2069 doi:10.1002/pssc.200778414
Bogdanov, M. V., Bulashevich, K. A., Evstratov, I. Yu., Karpov, S. Yu. (2008) Current spreading, heat transfer, and light extraction in multi-pixel LED array. physica status solidi (c), 5 (6). 2070-2072 doi:10.1002/pssc.200778415
Braun, Harald, Meyer, Tobias, Scholz, Dominik, Schwarz, Ulrich T., BrĂŒninghoff, Stefanie, Lell, Alfred, Strauß, Uwe (2008) Spectral and time resolved scanning near-field microscopy of broad area 405 nm InGaN laser diode dynamics. physica status solidi (c), 5 (6). 2073-2076 doi:10.1002/pssc.200778416
Strauss, Uwe, Eichler, Christoph, Rumbolz, Christian, Lell, Alfred, Lutgen, Stephan, Tautz, Sönke, Schillgalies, Marc, BrĂŒninghoff, Stefanie (2008) Beam quality of blue InGaN laser for projection. physica status solidi (c), 5 (6). 2077-2079 doi:10.1002/pssc.200778417
Kuo, C. W., Chen, C. M., Feng, H. C., Kuo, C. H. (2008) Reliable nitride-based near-ultraviolet light-emitting diodes with meshed p-GaN. physica status solidi (c), 5 (6). 2080-2082 doi:10.1002/pssc.200778418
Ishida, Fumio, Yoshimura, Kazumasa, Hoshino, Katsuyuki, Tadatomo, Kazuyuki (2008) Improved light extraction efficiency of GaN-based light emitting diodes by using needle-shape indium tin oxide p-contact. physica status solidi (c), 5 (6). 2083-2085 doi:10.1002/pssc.200778439
Ishikawa, H., Jimbo, T., Egawa, T. (2008) GaInN light emitting diodes with AlInN/GaN distributed Bragg reflector on Si. physica status solidi (c), 5 (6). 2086-2088 doi:10.1002/pssc.200778441
Feneberg, Martin, Lipski, Frank, Schirra, Martin, Sauer, Rolf, Thonke, Klaus, Wunderer, Thomas, BrĂŒckner, Peter, Scholz, Ferdinand (2008) High quantum efficiency of semipolar GaInN/GaN quantum wells. physica status solidi (c), 5 (6). 2089-2091 doi:10.1002/pssc.200778445
As, D. J., Schörmann, J., Tschumak, E., Lischka, K., DeCuir, E. A., Manasreh, M. O. (2008) Growth of nonpolar cubic GaN/AlN multiple quantum wells with intersubband transitions for 1.5 ”m applications. physica status solidi (c), 5 (6). 2092-2095 doi:10.1002/pssc.200778446
Tamulaitis, G., Mickevičius, J., Kuokơtis, E., Liu, K., Shur, M. S., Zhang, J. P., Gaska, R. (2008) Carrier dynamics in wide-band-gap AlGaN/AlGaN quantum wells. physica status solidi (c), 5 (6). 2096-2098 doi:10.1002/pssc.200778448
Lai, Chun-Feng, Kuo, H. C., Chao, C. H., Hsueh, H. T., Wang, J.-F. T., Yeh, W. Y., Chi, J. Y., Lu, T. C., Wang, S. C. (2008) Azimuthal anisotropy of light extraction from photonic crystal light-emitting diodes. physica status solidi (c), 5 (6). 2099-2101 doi:10.1002/pssc.200778453
Takano, T., Fujikawa, S., Kondo, Y., Hirayama, H. (2008) Remarkable improvement in output power for an InAlGaN based ultraviolet LED by improving the crystalline quality of AlN/AlGaN templates. physica status solidi (c), 5 (6). 2102-2104 doi:10.1002/pssc.200778455
Jimi, H., Inada, T., Horiguchi, M., Satake, A., Fujiwara, K. (2008) Comparative study of temperature-dependent electroluminescence efficiency in blue and green (In,Ga)N multiple-quantum-well diodes. physica status solidi (c), 5 (6). 2105-2107 doi:10.1002/pssc.200778458
Tyagi, Anurag, Zhong, Hong, Chung, Roy B., Feezell, Daniel F., Saito, Makoto, Fujito, Kenji, Speck, James S., DenBaars, Steven P., Nakamura, Shuji (2008) InGaN/GaN laser diodes on semipolar (10) bulk GaN substrates. physica status solidi (c), 5 (6). 2108-2110 doi:10.1002/pssc.200778460
Lin, E. Y., Chen, C. Y., Lay, T. S., Wang, T. C., Tsay, J. D., Peng, P. X., Lin, T. Y. (2008) Internal quantum efficiency and optical polarization analysis of InGaN/GaN multiple quantum wells ona -plane GaN. physica status solidi (c), 5 (6). 2111-2113 doi:10.1002/pssc.200778461
Ishiguro, T., Toda, Y., Adachi, S., Hoshino, K., Arakawa, Y. (2008) Dephasing studies of exciton fine structure in uniaxially-strained GaN. physica status solidi (c), 5 (6). 2114-2116 doi:10.1002/pssc.200778466
Hauguth-Frank, S., Lebedev, V., BĂŒchner, H.-J., JĂ€ger, G., Ambacher, O. (2008) Ultra-thin InGaN photodetectors for standing wave interferometry. physica status solidi (c), 5 (6). 2117-2119 doi:10.1002/pssc.200778467
Nevou, L., Julien, F. H., Tchernycheva, M., Guillot, F., Sarigiannidou, E., Monroy, E. (2008) Near-infrared intersubband emission from GaN/AlN quantum dots and quantum wells. physica status solidi (c), 5 (6). 2120-2122 doi:10.1002/pssc.200778469
Satake, A., Soejima, K., Aizawa, H., Fujiwara, K. (2008) Enhanced capture of photogenerated carriers by optimum forward bias condition in blue and green (In,Ga)N single-quantum-well diodes. physica status solidi (c), 5 (6). 2123-2125 doi:10.1002/pssc.200778471
Kojima, Kazunobu, Funato, Mitsuru, Kawakami, Yoichi, Braun, Harald, Schwarz, Ulrich, Nagahama, Shinichi, Mukai, Takashi (2008) Inhomogeneously broadened optical gain spectra of InGaN quantum well laser diodes. physica status solidi (c), 5 (6). 2126-2128 doi:10.1002/pssc.200778472
Hoshi, Takuya, Koyama, Takahiro, Sugawara, Mariko, Uedono, Akira, Kaeding, John F., Sharma, Rajat, Nakamura, Shuji, Chichibu, Shigefusa F. (2008) Correlation between the violet luminescence intensity and defect density in AlN epilayers grown by ammonia-source molecular beam epitaxy. physica status solidi (c), 5 (6). 2129-2132 doi:10.1002/pssc.200778473
Maier, M., Köhler, K., Kunzer, M., Wiegert, J., Liu, S., Kaufmann, U., Wagner, J. (2008) Enhancement of (AlGaIn)N near-UV LED efficiency using freestanding GaN substrate. physica status solidi (c), 5 (6). 2133-2135 doi:10.1002/pssc.200778475
Chen, Y. F., Chen, W. C., Chuang, R. W., Su, Y. K., Tsai, H. L. (2008) Effect of AlGaAs cladding layer on GaInNAs/GaAs MQW p-i-n photodetector. physica status solidi (c), 5 (6). 2136-2138 doi:10.1002/pssc.200778477
Yu, Wen-Chien, Ye, Shu-Mei, Hsiao, Feng-Ke, Lee, Chi-Ling, Lee, Wei-I (2008) Formation of nitride laser cavities with cleaved facets on transferred laser diodes on GaAs substrates. physica status solidi (c), 5 (6). 2139-2141 doi:10.1002/pssc.200778478
Iida, K., Watanabe, H., Takeda, K., Mori, F., Tsuzuki, H., Yamashita, Y., Iwaya, M., Kamiyama, S., Amano, H., Akasaki, I., Maruyama, H., Takagi, T., Bandoh, A. (2008) Optimization of underlying layer and the device structure for group-III-nitride-based UV emitters on sapphire. physica status solidi (c), 5 (6). 2142-2144 doi:10.1002/pssc.200778485
Kawashima, T., Hayakawa, T., Hayashi, M., Nagai, T., Iida, D., Miura, A., Kasamatsu, Y., Iwaya, M., Kamiyama, S., Amano, H., Akasaki, I. (2008) Improvement in performance of m-plane GaInN light emitting diode grown on m-plane SiC by sidewall epitaxial lateral overgrowth. physica status solidi (c), 5 (6). 2145-2147 doi:10.1002/pssc.200778486
Dahal, R., Li, J., Fan, Z. Y., Nakarmi, M. L., Tahtamouni, T. M. Al, Lin, J. Y., Jiang, H. X. (2008) AlN MSM and Schottky photodetectors. physica status solidi (c), 5 (6). 2148-2151 doi:10.1002/pssc.200778489
Yen, H. H., Kuo, H. C., Yeh, W. Y. (2008) Improvement of GaN-based LED with SiO2 photonic crystal on an ITO film by holographic lithography. physica status solidi (c), 5 (6). 2152-2154 doi:10.1002/pssc.200778495
Cuong, Tran Viet, Kim, Hyung Gu, Na, Min Gyu, Kim, Hyun Kyu, Kim, Hee Yun, Ryu, Jae Hyoung, Hong, Chang-Hee (2008) Characterization of plasma damage-free InGaN/GaN LED with periodic deflectors. physica status solidi (c), 5 (6). 2155-2157 doi:10.1002/pssc.200778498
Tachibana, Koichi, Nago, Hajime, Nunoue, Shin-ya (2008) Direct observation of uniform optical properties from microphotoluminescence mapping of InGaN quantum wells grown on slightly misoriented GaN substrates. physica status solidi (c), 5 (6). 2158-2160 doi:10.1002/pssc.200778500
Wang, Te-Chung, Ko, Tsung-Shine, Lu, Tien-Chang, Kuo, Hao-Chung, Gao, Run-Ci, Tsay, Jenq-Dar, Wang, Sing-Chung (2008) Internal quantum efficiency behavior of a-plane and c-plane InGaN/GaN multiple quantum well with different indium compositions. physica status solidi (c), 5 (6). 2161-2163 doi:10.1002/pssc.200778503
Jahn, U., Calleja, E., Ristić, J., Trampert, A., Rivera, C. (2008) Spatially resolved luminescence spectroscopy of single GaN/(Al,Ga)N quantum disks. physica status solidi (c), 5 (6). 2164-2166 doi:10.1002/pssc.200778508
Tsai, Shin-Li, Wu, Jenq-Shinn, Lin, Hung-Ji, Lin, Der-Yuh, Zheng, Jin-Yao (2008) Simulation and design of InGaAsN metal-semiconductor-metal photodetectors for long wavelength optical communications. physica status solidi (c), 5 (6). 2167-2169 doi:10.1002/pssc.200778510
Kunzer, M., Leancu, C.-C., Maier, M., Köhler, K., Kaufmann, U., Wagner, J. (2008) Well width dependent luminescence characteristics of UV-violet emitting GaInN QW LED structures. physica status solidi (c), 5 (6). 2170-2172 doi:10.1002/pssc.200778511
Teisseyre, H., Szyman’ski, M., Khachapuridze, A., ƚwietlik, T., Skierbiszewski, C., Feduniewicz-Ć»muda, A., Siekacz, M., Ɓucznik, B., Kamler, G., Kryƛko, M., Suski, T., Perlin, P., Grzegory, I., Porowski, S. (2008) Optically pumped lasing of GaN/AlGaN structures grown along a non-polar crystallographic direction. physica status solidi (c), 5 (6). 2173-2175 doi:10.1002/pssc.200778521
Arai, M., Sugimoto, K., Egawa, S., Honda, T. (2008) Fabrication of GaN-based UV TF-ELDs by CS-MBE technique and their application to RGB light-emitting pixels. physica status solidi (c), 5 (6). 2176-2178 doi:10.1002/pssc.200778522
Hwang, Sungmin, Yoon, Joosun, Shim, Jongin, Yoo, Kyungyul (2008) Effect of electrode pattern on light emission distribution in InGaN/GaN light emitting diode. physica status solidi (c), 5 (6). 2179-2182 doi:10.1002/pssc.200778524
Soh, C. B., Chua, S. J., Hartono, H. (2008) Voltage tunable wavelength LEDs. physica status solidi (c), 5 (6). 2183-2185 doi:10.1002/pssc.200778526
Wu, S. E., Hsueh, T. H., Liu, C. P., Sheu, J. K., Lai, W. C., Chang, S. J. (2008) Non-lithographic nanopatterning of InGaN/GaN multiple quantum well nanopillars by focused ion beams. physica status solidi (c), 5 (6). 2186-2188 doi:10.1002/pssc.200778529
Chua, S. J., Soh, C. B., Liu, W., Teng, J. H., Ang, S. S., Teo, S. L. (2008) Quantum dots excited InGaN/GaN phosphor-free white LEDs. physica status solidi (c), 5 (6). 2189-2191 doi:10.1002/pssc.200778535
Schillgalies, M., Laubsch, A., Lutgen, St., Avramescu, A., BrĂŒderl, G., Queren, D., Strauss, U. (2008) Defect-related recombination in InGaN-lasers. physica status solidi (c), 5 (6). 2192-2194 doi:10.1002/pssc.200778537
Saito, Shinji, Narita, Tetsuo, Zaima, Kotaro, Tachibana, Koichi, Nago, Hajime, Hatakoshi, Gen-ichi, Nunoue, Shinya (2008) Estimation of internal quantum efficiency in InGaN-based light emitting diodes using electroluminescence decay times. physica status solidi (c), 5 (6). 2195-2197 doi:10.1002/pssc.200778538
Ng, W. N., Leung, C. H., Lai, P. T., Choi, H. W. (2008) Micro-pixel light emitting diodes with wavelength-tunable output. physica status solidi (c), 5 (6). 2198-2200 doi:10.1002/pssc.200778539
Hui, K. N., Ng, W. N., Leung, C. H., Lai, P. T., Choi, H. W. (2008) Polychromatic emission from fluorescent-microsphere-coated LEDs. physica status solidi (c), 5 (6). 2201-2203 doi:10.1002/pssc.200778545
Xiu, H., Thrush, E. J., Kauer, M., Smeeton, T. M., Hooper, S. E., Heffernan, J., Humphreys, C. J. (2008) Degradation of III-nitride laser diodes grown by molecular beam epitaxy. physica status solidi (c), 5 (6). 2204-2206 doi:10.1002/pssc.200778546
Detchprohm, T., Zhu, M., Xia, Y., Li, Y., Zhao, W., Senawiratne, J., Wetzel, C. (2008) Improved performance of GaInN based deep green light emitting diodes through V-defect reduction. physica status solidi (c), 5 (6). 2207-2209 doi:10.1002/pssc.200778566
Jhin, Junggeun, Baek, Jong Hyeob, Lee, Jae Sang (2008) Effects of patterned ion implanted sapphire substrate for LED. physica status solidi (c), 5 (6). 2213-2215 doi:10.1002/pssc.200778570
Fellows, Natalie, Masui, Hisashi, Sato, Hitoshi, Asamizu, Hirokuni, Iza, Michael, Zhong, Hong, Nakamura, Shuji, DenBaars, Steven P. (2008) Enhancement of external quantum efficiency in GaN-based light emitting diodes using a suspended geometry. physica status solidi (c), 5 (6). 2216-2218 doi:10.1002/pssc.200778572
Salcianu, C. O., Thrush, E. J., Plumb, R. G., Boyd, A. R., Rockenfeller, O., Schmitz, D., Heuken, M., Humphreys, C. J. (2008) Palladium-based on-wafer electroluminescence studies of GaN-based LED structures. physica status solidi (c), 5 (6). 2219-2221 doi:10.1002/pssc.200778576
Miyajima, Takao, Uemura, Shigeaki, Kudo, Yoshihiro, Terada, Yasuko, Fuutagawa, Noriyuki (2008) Direct observation of indium compositional fluctuation in GaInN/GaN multi-quantum wells using an X-ray micro-beam from the 8-GeV storage ring. physica status solidi (c), 5 (6). 2222-2224 doi:10.1002/pssc.200778578
Honda, T., Kobayashi, T., Komiyama, S., Mashiyama, Y., Arai, M., Yoshioka, K. (2008) Fabrication of GaN-based Schottky-type light-emitting diodes for micropixels in flat-panel displays. physica status solidi (c), 5 (6). 2225-2227 doi:10.1002/pssc.200778592
Tripathi, N., Bell, L. D., Grandusky, J. R., Jindal, V., Shahedipour-Sandvik, F. (2008) Growth and characterization of a novel hyperspectral detector using the III-nitrides. physica status solidi (c), 5 (6). 2228-2230 doi:10.1002/pssc.200778597
Feng, Shih-Wei, Tsai, Tzong-Liang, Lan, Wen-How, Huang, C. J., Shih, Ming-Chang (2008) Time-resolved electro-luminescence studies of InGaN blue LEDs with chip size variations. physica status solidi (c), 5 (6). 2231-2233 doi:10.1002/pssc.200778613
Hikosaka, T., Tanikawa, T., Honda, Y., Yamaguchi, M., Sawaki, N. (2008) Fabrication and properties of semi-polar (1-101) and (11-22) InGaN/GaN light emitting diodes on patterned Si substrates. physica status solidi (c), 5 (6). 2234-2237 doi:10.1002/pssc.200778642
Schulze, F., Dadgar, A., Krtschil, A., Hums, C., Reissmann, L., Diez, A., Christen, J., Krost, A. (2008) MOVPE growth of blue InxGa1–xN/GaN LEDs on 150 mm Si(001). physica status solidi (c), 5 (6). 2238-2240 doi:10.1002/pssc.200778643
Voss, L. F., Stafford, L., Hlad, M., Gila, B. P., Abernathy, C. R., Pearton, S. J., Ren, F., Kravchenko, I. (2008) High temperature Ohmic contacts to p-type GaN for use in light emitting applications. physica status solidi (c), 5 (6). 2241-2243 doi:10.1002/pssc.200778644
Syrkin, A., Ivantsov, V., Kovalenkov, O., Usikov, A., Dmitriev, V., Liliental-Weber, Z., Reed, M. L., Readinger, E. D., Shen, H., Wraback, M. (2008) First all-HVPE grown InGaN/InGaN MQW LED structures for 460-510 nm. physica status solidi (c), 5 (6). 2244-2246 doi:10.1002/pssc.200778647
Senawiratne, J., Zhao, W., Detchprohm, T., Chatterjee, A., Li, Y., Zhu, M., Xia, Y., Plawsky, J. L., Wetzel, C. (2008) Junction temperature analysis in green light emitting diode dies on sapphire and GaN substrates. physica status solidi (c), 5 (6). 2247-2249 doi:10.1002/pssc.200778648
Meneghini, M., Trevisanello, L., Zehnder, U., Meneghesso, G., Zanoni, E. (2008) Thermal degradation of InGaN/GaN LEDs ohmic contacts. physica status solidi (c), 5 (6). 2250-2253 doi:10.1002/pssc.200778654
Stokker-Cheregi, F., Vinattieri, A., Feltin, E., Simeonov, D., Carlin, J.-F., Butté, R., Grandjean, N., Gurioli, M. (2008) Biexciton recombination in high quality GaN/AlGaN quantum wells. physica status solidi (c), 5 (6). 2254-2256 doi:10.1002/pssc.200778656
Stokker-Cheregi, F., Vinattieri, A., Colocci, M., Semond, F., Leroux, M., Massies, J., Sellers, I. R., Gurioli, M. (2008) Temperature dependence of the polariton relaxation bottleneck in a GaN microcavity. physica status solidi (c), 5 (6). 2257-2259 doi:10.1002/pssc.200778657
Fujikawa, Sachie, Takano, Takayoshi, Kondo, Yukihiro, Hirayama, Hideki (2008) Realization of 340 nm-band high-power InAlGaN-based ultraviolet light-emitting diodes by the suppression of electron overflow. physica status solidi (c), 5 (6). 2260-2262 doi:10.1002/pssc.200778666
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