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Matthews, K. D., Chen, X., Hao, D., Schaff, W. J., Eastman, L. F. (2008) MBE growth and characterization of Mg-doped InGaN and InAlN. physica status solidi (c), 5 (6). 1863-1865 doi:10.1002/pssc.200778707

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Reference TypeJournal (article/letter/editorial)
TitleMBE growth and characterization of Mg-doped InGaN and InAlN
Journalphysica status solidi (c)
AuthorsMatthews, K. D.Author
Chen, X.Author
Hao, D.Author
Schaff, W. J.Author
Eastman, L. F.Author
Year2008 (May)Volume5
Issue6
PublisherWiley
DOIdoi:10.1002/pssc.200778707Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5116487Long-form Identifiermindat:1:5:5116487:2
GUID0
Full ReferenceMatthews, K. D., Chen, X., Hao, D., Schaff, W. J., Eastman, L. F. (2008) MBE growth and characterization of Mg-doped InGaN and InAlN. physica status solidi (c), 5 (6). 1863-1865 doi:10.1002/pssc.200778707
Plain TextMatthews, K. D., Chen, X., Hao, D., Schaff, W. J., Eastman, L. F. (2008) MBE growth and characterization of Mg-doped InGaN and InAlN. physica status solidi (c), 5 (6). 1863-1865 doi:10.1002/pssc.200778707
In(2008, May) physica status solidi (c) Vol. 5 (6) Wiley

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Chen, X., Matthews, K. D., Hao, D., Schaff, W. J., Eastman, L. F. (2008) Growth, fabrication, and characterization of InGaN solar cells. physica status solidi (a), 205 (5). 1103-1105 doi:10.1002/pssa.200778695
King, P. D. C., Veal, T. D., Schaff, W. J., McConville, C. F. (2009) Surface electronic properties of Mg-doped InAlN alloys. physica status solidi (b), 246 (6). 1169-1172 doi:10.1002/pssb.200880766
Schaff, William J., Chen, Xiaodong, Hao, Dong, Matthews, Kris, Richards, Troy, Eastman, Lester F., Lu, Hai, Cho, Clara Ji-Hyun, Cha, Ho-Young (2008) Electrical properties of InGaN grown by molecular beam epitaxy. physica status solidi (b), 245 (5). 868-872 doi:10.1002/pssb.200778710
Gherasoiu, I., O'Steen, M., Bird, T., Gotthold, D., Chandolu, A., Song, D. Y., Xu, S. X., Holtz, M., Nikishin, S. A., Schaff, W. J. (2008) Growth of high quality InN on production style PA-MBE system. physica status solidi (c), 5 (6). 1642-1644 doi:10.1002/pssc.200778561
Baumann, E., Giorgetta, F. R., Hofstetter, D., Wu, H., Schaff, W. J., Eastman, L. F., Kirste, L. (2005) Resonant tunnelling and intersubband absorption in AlN - GaN superlattices. physica status solidi (c), 2 (3). 1014-1018 doi:10.1002/pssc.200460611
Matthews, K. D., Chen, X., Hao, D., Schaff, W. J., Eastman, L. F. (2010) GaN photovoltaic leakage current and correlation to grain size. Journal of Applied Physics, 108 (7). 73105pp. doi:10.1063/1.3488886
Burnham, S. D., Henderson, W., Doolittle, W. A. (2008) Closed-loop MBE growth of droplet-free GaN with very metal rich conditions using Metal Modulated Epitaxy with Mg and In. physica status solidi (c), 5 (6). 1855-1858 doi:10.1002/pssc.200778703
Ager, J. W., Miller, N., Jones, R. E., Yu, K. M., Wu, J., Schaff, W. J., Walukiewicz, W. (2008) Mg-doped InN and InGaN – Photoluminescence, capacitance–voltage and thermopower measurements. physica status solidi (b), 245 (5). 873-877 doi:10.1002/pssb.200778731
Hawkridge, Michael E., Liliental-Weber, Zuzanna, Yu, Kin M., Reichertz, Lothar A., Schaff, William J., Ager, Joel W., Walukiewicz, Wladek (2009) Stacking faults and phase changes in Mg-doped InGaN grown on Si. physica status solidi (c), 6. doi:10.1002/pssc.200880978
Cheng, A. T., Su, Y. K., Lai, W. C. (2008) Characterization of Mg-doped AlInN grown by metalorganic vapor phase epitaxy. physica status solidi (c), 5 (6). 1685-1687 doi:10.1002/pssc.200778587
Higashiwaki, M., Matsui, T. (2005) MBE growth and device characteristics of InAlN/GaN HFETs. physica status solidi (c), 2 (7). 2598-2601 doi:10.1002/pssc.200461389
 
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