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Veis, M., Hagihara, K., Nakagawa, S., Inoue, Y., Ishida, A. (2008) AlN/GaN superlattice quality improvement by using multiple superlattice structure. physica status solidi (c), 5 (6). 1547-1549 doi:10.1002/pssc.200778464

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Reference TypeJournal (article/letter/editorial)
TitleAlN/GaN superlattice quality improvement by using multiple superlattice structure
Journalphysica status solidi (c)
AuthorsVeis, M.Author
Hagihara, K.Author
Nakagawa, S.Author
Inoue, Y.Author
Ishida, A.Author
Year2008 (May)Volume5
Issue6
PublisherWiley
DOIdoi:10.1002/pssc.200778464Search in ResearchGate
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Mindat Ref. ID5116104Long-form Identifiermindat:1:5:5116104:2
GUID0
Full ReferenceVeis, M., Hagihara, K., Nakagawa, S., Inoue, Y., Ishida, A. (2008) AlN/GaN superlattice quality improvement by using multiple superlattice structure. physica status solidi (c), 5 (6). 1547-1549 doi:10.1002/pssc.200778464
Plain TextVeis, M., Hagihara, K., Nakagawa, S., Inoue, Y., Ishida, A. (2008) AlN/GaN superlattice quality improvement by using multiple superlattice structure. physica status solidi (c), 5 (6). 1547-1549 doi:10.1002/pssc.200778464
In(2008, May) physica status solidi (c) Vol. 5 (6) Wiley

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