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Sawada, T., Takahashi, K., Imai, K., Suzuki, K., Kimura, N., Kitamori, K. (2008) Influence of surface preparation and i-AlGaN thickness on electrical properties of i-AlGaN/GaN heterostructures. physica status solidi (c), 5 (6). 1695-1698 doi:10.1002/pssc.200778591

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Reference TypeJournal (article/letter/editorial)
TitleInfluence of surface preparation and i-AlGaN thickness on electrical properties of i-AlGaN/GaN heterostructures
Journalphysica status solidi (c)
AuthorsSawada, T.Author
Takahashi, K.Author
Imai, K.Author
Suzuki, K.Author
Kimura, N.Author
Kitamori, K.Author
Year2008 (May)Volume5
Issue6
PublisherWiley
DOIdoi:10.1002/pssc.200778591Search in ResearchGate
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Mindat Ref. ID5116310Long-form Identifiermindat:1:5:5116310:1
GUID0
Full ReferenceSawada, T., Takahashi, K., Imai, K., Suzuki, K., Kimura, N., Kitamori, K. (2008) Influence of surface preparation and i-AlGaN thickness on electrical properties of i-AlGaN/GaN heterostructures. physica status solidi (c), 5 (6). 1695-1698 doi:10.1002/pssc.200778591
Plain TextSawada, T., Takahashi, K., Imai, K., Suzuki, K., Kimura, N., Kitamori, K. (2008) Influence of surface preparation and i-AlGaN thickness on electrical properties of i-AlGaN/GaN heterostructures. physica status solidi (c), 5 (6). 1695-1698 doi:10.1002/pssc.200778591
In(2008, May) physica status solidi (c) Vol. 5 (6) Wiley

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