Sawada, T, Izumi, Y, Kimura, N, Suzuki, K, Imai, K, Kim, S.-W, Suzuki, T (2003) Properties of GaN and AlGaN Schottky contacts revealed from I–V–T and C–V–T measurements. Applied Surface Science, 216. 192-197 doi:10.1016/s0169-4332(03)00440-9
| Reference Type | Journal (article/letter/editorial) | ||
|---|---|---|---|
| Title | Properties of GaN and AlGaN Schottky contacts revealed from I–V–T and C–V–T measurements | ||
| Journal | Applied Surface Science | ||
| Authors | Sawada, T | Author | |
| Izumi, Y | Author | ||
| Kimura, N | Author | ||
| Suzuki, K | Author | ||
| Imai, K | Author | ||
| Kim, S.-W | Author | ||
| Suzuki, T | Author | ||
| Year | 2003 (June) | Volume | 216 |
| Publisher | Elsevier BV | ||
| DOI | doi:10.1016/s0169-4332(03)00440-9Search in ResearchGate | ||
| Generate Citation Formats | |||
| Mindat Ref. ID | 9905296 | Long-form Identifier | mindat:1:5:9905296:8 |
| GUID | 0 | ||
| Full Reference | Sawada, T, Izumi, Y, Kimura, N, Suzuki, K, Imai, K, Kim, S.-W, Suzuki, T (2003) Properties of GaN and AlGaN Schottky contacts revealed from I–V–T and C–V–T measurements. Applied Surface Science, 216. 192-197 doi:10.1016/s0169-4332(03)00440-9 | ||
| Plain Text | Sawada, T, Izumi, Y, Kimura, N, Suzuki, K, Imai, K, Kim, S.-W, Suzuki, T (2003) Properties of GaN and AlGaN Schottky contacts revealed from I–V–T and C–V–T measurements. Applied Surface Science, 216. 192-197 doi:10.1016/s0169-4332(03)00440-9 | ||
| In | (n.d.) Applied Surface Science Vol. 216. Elsevier BV | ||
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