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Ryou, J.-H., Liu, J. P., Zhang, Y., Horne, C. A., Lee, W., Shen, S.-C., Dupuis, R. D. (2008) Surface treatment on the growth surface of semi-insulating GaN bulk substrate for III-nitride heterostructure field-effect transistors. physica status solidi (c), 5 (6). 1849-1851 doi:10.1002/pssc.200778698

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Reference TypeJournal (article/letter/editorial)
TitleSurface treatment on the growth surface of semi-insulating GaN bulk substrate for III-nitride heterostructure field-effect transistors
Journalphysica status solidi (c)
AuthorsRyou, J.-H.Author
Liu, J. P.Author
Zhang, Y.Author
Horne, C. A.Author
Lee, W.Author
Shen, S.-C.Author
Dupuis, R. D.Author
Year2008 (May)Volume5
Issue6
PublisherWiley
DOIdoi:10.1002/pssc.200778698Search in ResearchGate
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Mindat Ref. ID5116472Long-form Identifiermindat:1:5:5116472:0
GUID0
Full ReferenceRyou, J.-H., Liu, J. P., Zhang, Y., Horne, C. A., Lee, W., Shen, S.-C., Dupuis, R. D. (2008) Surface treatment on the growth surface of semi-insulating GaN bulk substrate for III-nitride heterostructure field-effect transistors. physica status solidi (c), 5 (6). 1849-1851 doi:10.1002/pssc.200778698
Plain TextRyou, J.-H., Liu, J. P., Zhang, Y., Horne, C. A., Lee, W., Shen, S.-C., Dupuis, R. D. (2008) Surface treatment on the growth surface of semi-insulating GaN bulk substrate for III-nitride heterostructure field-effect transistors. physica status solidi (c), 5 (6). 1849-1851 doi:10.1002/pssc.200778698
In(2008, May) physica status solidi (c) Vol. 5 (6) Wiley

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Liu, J. P., Ryou, J.-H., Yoo, D., Zhang, Y., Limb, J., Horne, C. A., Shen, S.-C., Dupuis, R. D., Hanser, A. D., Preble, E. A., Evans, K. R. (2008) III-nitride heterostructure field-effect transistors grown on semi-insulating GaN substrate without regrowth interface charge. Applied Physics Letters, 92 (13). 133513pp. doi:10.1063/1.2906372
Sridharan, Sriraaman, Yoder, P. D., Shen, S. C., Ryou, J. H., Dupuis, R. D. (2009) Geiger mode simulation of GaN homojunction avalanche photodetectors. physica status solidi (c), 6. doi:10.1002/pssc.200880903
Zhang, Yun, Yoo, Dongwon, Limb, Jae-Boum, Ryou, Jae-Hyun, Dupuis, Russell D., Shen, Shyh-Chiang (2008) GaN ultraviolet avalanche photodiodes fabricated on free-standing bulk GaN substrates. physica status solidi (c), 5 (6). 2290-2292 doi:10.1002/pssc.200778704
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Yoder, P. D., Sridharan, Sriraaman, Graham, Samuel, Shen, S.-C., Ryou, J.-H., Dupuis, R. D. (2011) Traveling dipole domains in AlGaN/GaN heterostructures and the direct generation of millimeter-wave oscillations. physica status solidi (c), 8 (7). 2285-2287 doi:10.1002/pssc.201001143
Chung, T., Limb, J.-B., Chowdhury, U., Li, P., Ryou, J.-H., Yoo, D., Zakharov, D., Liliental-Weber, Z., Dupuis, R. D. (2005) MOCVD growth of InGaN:Mg for GaN/InGaN HBTs. physica status solidi (c), 2 (7). 2157-2160 doi:10.1002/pssc.200461598
Shin, T. I., Lee, H. J., Chung, K. W., Kang, M. S., Yoon, D. H. (2004) Bulk GaN single crystal growth for substrate by solvent-thermal method. physica status solidi (c), 1 (10). 2441-2444 doi:10.1002/pssc.200404974
Wakamiya, Y., Hasegawa, F., Kawanishi, H. (2008) Investigation on conductivity at the GaN/AlN/SiC substrate interface for vertical nitride power FETs. physica status solidi (c), 5 (6). 1505-1507 doi:10.1002/pssc.200778426
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