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Shin, T. I., Lee, H. J., Chung, K. W., Kang, M. S., Yoon, D. H. (2004) Bulk GaN single crystal growth for substrate by solvent-thermal method. physica status solidi (c), 1 (10). 2441-2444 doi:10.1002/pssc.200404974

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Reference TypeJournal (article/letter/editorial)
TitleBulk GaN single crystal growth for substrate by solvent-thermal method
Journalphysica status solidi (c)
AuthorsShin, T. I.Author
Lee, H. J.Author
Chung, K. W.Author
Kang, M. S.Author
Yoon, D. H.Author
Year2004 (September)Volume1
Issue10
PublisherWiley
DOIdoi:10.1002/pssc.200404974Search in ResearchGate
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Mindat Ref. ID5107811Long-form Identifiermindat:1:5:5107811:3
GUID0
Full ReferenceShin, T. I., Lee, H. J., Chung, K. W., Kang, M. S., Yoon, D. H. (2004) Bulk GaN single crystal growth for substrate by solvent-thermal method. physica status solidi (c), 1 (10). 2441-2444 doi:10.1002/pssc.200404974
Plain TextShin, T. I., Lee, H. J., Chung, K. W., Kang, M. S., Yoon, D. H. (2004) Bulk GaN single crystal growth for substrate by solvent-thermal method. physica status solidi (c), 1 (10). 2441-2444 doi:10.1002/pssc.200404974
In(2004, September) physica status solidi (c) Vol. 1 (10) Wiley

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Hwang, W. J., Lee, T. H., Nam, O. H., Kim, H. K., Kwak, J. S., Park, Y. J., Shin, M. W. (2006) Thermal analysis of GaN-based laser diode package. physica status solidi (c), 3 (6). 2174-2177 doi:10.1002/pssc.200565170
Shin, T. I., Yoon, D. H. (2005) Growth behaviour of bulk GaN single crystals grown with various flux ratios using solventā€thermal method. Crystal Research and Technology, 40 (9) 827-831 doi:10.1002/crat.200410441
Ostermaier, C., Lee, H.-C., Hyun, S.-Y., Ahn, S.-I., Kim, K.-W., Cho, H.-I., Ha, J.-B., Lee, J.-H. (2008) Interface characterization of ALD deposited Al2O3 on GaN by CV method. physica status solidi (c), 5 (6). 1992-1994 doi:10.1002/pssc.200778663
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