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Boutros, K. S., Shinohara, K., Ha, W., Paniagua, A., Brar, B. (2008) Laterally engineered field-plate GaN HEMTs for millimeter-wave applications. physica status solidi (c), 5 (6). 2022-2025 doi:10.1002/pssc.200778711

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Reference TypeJournal (article/letter/editorial)
TitleLaterally engineered field-plate GaN HEMTs for millimeter-wave applications
Journalphysica status solidi (c)
AuthorsBoutros, K. S.Author
Shinohara, K.Author
Ha, W.Author
Paniagua, A.Author
Brar, B.Author
Year2008 (May)Volume5
Issue6
PublisherWiley
DOIdoi:10.1002/pssc.200778711Search in ResearchGate
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Mindat Ref. ID5116489Long-form Identifiermindat:1:5:5116489:0
GUID0
Full ReferenceBoutros, K. S., Shinohara, K., Ha, W., Paniagua, A., Brar, B. (2008) Laterally engineered field-plate GaN HEMTs for millimeter-wave applications. physica status solidi (c), 5 (6). 2022-2025 doi:10.1002/pssc.200778711
Plain TextBoutros, K. S., Shinohara, K., Ha, W., Paniagua, A., Brar, B. (2008) Laterally engineered field-plate GaN HEMTs for millimeter-wave applications. physica status solidi (c), 5 (6). 2022-2025 doi:10.1002/pssc.200778711
In(2008, May) physica status solidi (c) Vol. 5 (6) Wiley

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Nakajima, Atsushi, Itagaki, Keiichi, Horio, Kazushige (2009) Reduction of buffer-related current collapse in field-plate AlGaN/GaN HEMTs. physica status solidi (c), 6. doi:10.1002/pssc.200880756
Itagaki, K., Nakajima, A., Horio, K. (2008) Reduction of buffer-related current collapse in GaN FETs under favour of a field plate. physica status solidi (c), 5 (9). 2976-2978 doi:10.1002/pssc.200779155
Nakajima, Atsushi, Itagaki, Keiichi, Horio, Kazushige (2009) Effects of field plate on buffer trapping in AlGaN/GaN HEMTs. physica status solidi (c), 6 (12). 2840-2842 doi:10.1002/pssc.200982557
Onodera, Hiraku, Hanawa, Hideyuki, Horio, Kazushige (2016) Analysis of breakdown characteristics in source field-plate AlGaN/GaN HEMTs. physica status solidi (c), 13 (5). 350-353 doi:10.1002/pssc.201510155
Horio, K., Nakajima, A. (2008) Analysis of buffer-trapping effects on gate lag, drain lag and current collapse in AlGaN/GaN HEMTs. physica status solidi (c), 5 (6). 1898-1901 doi:10.1002/pssc.200778401
Nakajima, Akira, Shimizu, Mitsuaki, Okumura, Hajime (2007) Novel field plate structure of AlGaN/GaN HEMTs. physica status solidi (c), 4 (7). 2736-2739 doi:10.1002/pssc.200674876
Haupt, C., Maroldt, S., Quay, R., Pletschen, W., Leuther, A., Ambacher, O. (2011) Development of a high transconductance GaN MMIC technology for millimeter wave applications. physica status solidi (c), 8 (2). 297-299 doi:10.1002/pssc.201000535
Horio, Kazushige, Onodera, Hiraku (2012) Backside-electrode effects on current collapse in field-plate AlGaN/GaN HEMTs. physica status solidi (c), 9 (7). 1655-1657 doi:10.1002/pssc.201100554
Ito, M., Kishimoto, S., Nakamura, F., Mizutani, T. (2008) Enhancement-mode AlGaN/GaN HEMTs with thin InGaN cap layer. physica status solidi (c), 5 (6). 1929-1931 doi:10.1002/pssc.200778451
Kanamura, M., Ohki, T., Imanishi, K., Makiyama, K., Okamoto, N., Kikkawa, T., Hara, N., Joshin, K. (2008) High power and high gain AlGaN/GaN MIS-HEMTs with high-k dielectric layer. physica status solidi (c), 5 (6). 2037-2040 doi:10.1002/pssc.200778738
Ostermaier, C., Lee, H.-C., Hyun, S.-Y., Ahn, S.-I., Kim, K.-W., Cho, H.-I., Ha, J.-B., Lee, J.-H. (2008) Interface characterization of ALD deposited Al2O3 on GaN by CV method. physica status solidi (c), 5 (6). 1992-1994 doi:10.1002/pssc.200778663
 
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