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Ishizawa, Shunsuke, Kikuchi, Akihiko, Kishino, Katsumi (2008) Selective growth of GaN nanocolumns on predeposited Al patterns by rf-plasma-assisted molecular-beam epitaxy. physica status solidi (c), 5 (6). 1879-1882 doi:10.1002/pssc.200778730

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Reference TypeJournal (article/letter/editorial)
TitleSelective growth of GaN nanocolumns on predeposited Al patterns by rf-plasma-assisted molecular-beam epitaxy
Journalphysica status solidi (c)
AuthorsIshizawa, ShunsukeAuthor
Kikuchi, AkihikoAuthor
Kishino, KatsumiAuthor
Year2008 (May)Volume5
Issue6
PublisherWiley
DOIdoi:10.1002/pssc.200778730Search in ResearchGate
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Mindat Ref. ID5116518Long-form Identifiermindat:1:5:5116518:1
GUID0
Full ReferenceIshizawa, Shunsuke, Kikuchi, Akihiko, Kishino, Katsumi (2008) Selective growth of GaN nanocolumns on predeposited Al patterns by rf-plasma-assisted molecular-beam epitaxy. physica status solidi (c), 5 (6). 1879-1882 doi:10.1002/pssc.200778730
Plain TextIshizawa, Shunsuke, Kikuchi, Akihiko, Kishino, Katsumi (2008) Selective growth of GaN nanocolumns on predeposited Al patterns by rf-plasma-assisted molecular-beam epitaxy. physica status solidi (c), 5 (6). 1879-1882 doi:10.1002/pssc.200778730
In(2008, May) physica status solidi (c) Vol. 5 (6) Wiley

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Kouno, Tetsuya, Kishino, Katsumi, Sekiguchi, Hiroto, Kikuchi, Akihiko (2009) Ti-mask selective-area growth of GaN nanorings by RF-plasma-assisted molecular-beam epitaxy. physica status solidi (c), 6. doi:10.1002/pssc.200880988
Ishizawa, Shunsuke, Sekiguchi, Hiroto, Kikuchi, Akihiko, Kishino, Katsumi (2007) Selective growth of GaN nanocolumns by Al thin layer on substrate. physica status solidi (b), 244 (6). 1815-1819 doi:10.1002/pssb.200674911
Sekiguchi, Hiroto, Kishino, Katsumi, Kikuchi, Akihiko (2010) Formation of InGaN quantum dots in regularly arranged GaN nanocolumns grown by rf-plasma-assisted molecular-beam epitaxy. physica status solidi (c), 7 (10). 2374-2377 doi:10.1002/pssc.201083915
Sekiguchi, Hiroto, Kato, Kei, Kikuchi, Akihiko, Kishino, Katsumi (2008) Effect of Be-doping on InGaN/GaN nanocolumn light-emitting diode structures by rf-plasma-assisted molecular-beam epitaxy. physica status solidi (c), 5 (9). 3069-3072 doi:10.1002/pssc.200779291
Kamimura, Jumpei, Kouno, Tetsuya, Ishizawa, Shunsuke, Kikuchi, Akihiko, Kishino, Katsumi (2007) Growth of high-In-content InAlN nanocolumns on Si (111) by RF-plasma-assisted molecular-beam epitaxy. Journal of Crystal Growth, 300 (1). 160-163 doi:10.1016/j.jcrysgro.2006.11.029
Kouno, Tetsuya, Kikuchi, Akihiko, Kishino, Katsumi (2006) Growth of high-In-content InGaN multiple quantum disk nanocolumns on Si(111) by RF plasma-assisted molecular-beam epitaxy. physica status solidi (b), 243 (7). 1481-1485 doi:10.1002/pssb.200565254
Sekiguchi, Hiroto, Kato, Kei, Tanaka, Jo, Kikuchi, Akihiko, Kishino, Katsumi (2008) Ultraviolet GaN-based nanocolumn light-emitting diodes grown on n-(111) Si substrates by rf-plasma-assisted molecular beam epitaxy. physica status solidi (a), 205 (5). 1067-1069 doi:10.1002/pssa.200778733
Sekiguchi, Hiroto, Nakazato, Takuya, Kikuchi, Akihiko, Kishino, Katsumi (2007) Structural and optical properties of GaN nanocolumns grown on (0001) sapphire substrates by rf-plasma-assisted molecular-beam epitaxy. Journal of Crystal Growth, 300 (1). 259-262 doi:10.1016/j.jcrysgro.2006.11.036
Kishino, Katsumi, Sekiguchi, Hiroto, Kikuchi, Akihiko (2009) Improved Ti-mask selective-area growth (SAG) by rf-plasma-assisted molecular beam epitaxy demonstrating extremely uniform GaN nanocolumn arrays. Journal of Crystal Growth, 311 (7). 2063-2068 doi:10.1016/j.jcrysgro.2008.11.056
Kato, Kei, Kishino, Katsumi, Sekiguchi, Hiroto, Kikuchi, Akihiko (2009) Overgrowth of GaN on Be-doped coalesced GaN nanocolumn layer by rf-plasma-assisted molecular-beam epitaxy—Formation of high-quality GaN microcolumns. Journal of Crystal Growth, 311 (10). 2956-2961 doi:10.1016/j.jcrysgro.2009.01.057
Kikuchi, Akihiko, Yamano, Kouji, Tada, Makoto, Kishino, Katsumi (2004) Stimulated emission from GaN nanocolumns. physica status solidi (b), 241 (12). 2754-2758 doi:10.1002/pssb.200405103
 
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