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Sekiguchi, Hiroto, Kato, Kei, Kikuchi, Akihiko, Kishino, Katsumi (2008) Effect of Be-doping on InGaN/GaN nanocolumn light-emitting diode structures by rf-plasma-assisted molecular-beam epitaxy. physica status solidi (c), 5 (9). 3069-3072 doi:10.1002/pssc.200779291

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Reference TypeJournal (article/letter/editorial)
TitleEffect of Be-doping on InGaN/GaN nanocolumn light-emitting diode structures by rf-plasma-assisted molecular-beam epitaxy
Journalphysica status solidi (c)
AuthorsSekiguchi, HirotoAuthor
Kato, KeiAuthor
Kikuchi, AkihikoAuthor
Kishino, KatsumiAuthor
Year2008 (July)Volume5
Issue9
PublisherWiley
DOIdoi:10.1002/pssc.200779291Search in ResearchGate
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Mindat Ref. ID5116963Long-form Identifiermindat:1:5:5116963:7
GUID0
Full ReferenceSekiguchi, Hiroto, Kato, Kei, Kikuchi, Akihiko, Kishino, Katsumi (2008) Effect of Be-doping on InGaN/GaN nanocolumn light-emitting diode structures by rf-plasma-assisted molecular-beam epitaxy. physica status solidi (c), 5 (9). 3069-3072 doi:10.1002/pssc.200779291
Plain TextSekiguchi, Hiroto, Kato, Kei, Kikuchi, Akihiko, Kishino, Katsumi (2008) Effect of Be-doping on InGaN/GaN nanocolumn light-emitting diode structures by rf-plasma-assisted molecular-beam epitaxy. physica status solidi (c), 5 (9). 3069-3072 doi:10.1002/pssc.200779291
In(2008, July) physica status solidi (c) Vol. 5 (9) Wiley

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Sekiguchi, Hiroto, Kishino, Katsumi, Kikuchi, Akihiko (2010) Formation of InGaN quantum dots in regularly arranged GaN nanocolumns grown by rf-plasma-assisted molecular-beam epitaxy. physica status solidi (c), 7 (10). 2374-2377 doi:10.1002/pssc.201083915
Kouno, Tetsuya, Kishino, Katsumi, Sekiguchi, Hiroto, Kikuchi, Akihiko (2009) Ti-mask selective-area growth of GaN nanorings by RF-plasma-assisted molecular-beam epitaxy. physica status solidi (c), 6. doi:10.1002/pssc.200880988
Kato, Kei, Kishino, Katsumi, Sekiguchi, Hiroto, Kikuchi, Akihiko (2009) Overgrowth of GaN on Be-doped coalesced GaN nanocolumn layer by rf-plasma-assisted molecular-beam epitaxy—Formation of high-quality GaN microcolumns. Journal of Crystal Growth, 311 (10). 2956-2961 doi:10.1016/j.jcrysgro.2009.01.057
Ishizawa, Shunsuke, Kikuchi, Akihiko, Kishino, Katsumi (2008) Selective growth of GaN nanocolumns on predeposited Al patterns by rf-plasma-assisted molecular-beam epitaxy. physica status solidi (c), 5 (6). 1879-1882 doi:10.1002/pssc.200778730
Kishino, Katsumi, Sekiguchi, Hiroto, Kikuchi, Akihiko (2009) Improved Ti-mask selective-area growth (SAG) by rf-plasma-assisted molecular beam epitaxy demonstrating extremely uniform GaN nanocolumn arrays. Journal of Crystal Growth, 311 (7). 2063-2068 doi:10.1016/j.jcrysgro.2008.11.056
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Sekiguchi, Hiroto, Nakazato, Takuya, Kikuchi, Akihiko, Kishino, Katsumi (2007) Structural and optical properties of GaN nanocolumns grown on (0001) sapphire substrates by rf-plasma-assisted molecular-beam epitaxy. Journal of Crystal Growth, 300 (1). 259-262 doi:10.1016/j.jcrysgro.2006.11.036
Sekiguchi, Hiroto, Kishino, Katsumi, Kikuchi, Akihiko (2010) Emission color control from blue to red with nanocolumn diameter of InGaN/GaN nanocolumn arrays grown on same substrate. Applied Physics Letters, 96 (23). 231104pp. doi:10.1063/1.3443734
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