Tajima, J., Kubota, Y., Togashi, R., Murakami, H., Kumagai, Y., Koukitu, A. (2008) Growth of thin protective AlN layers on sapphire substrates at 1065 °C for hydride vapor phase epitaxy of AlN above 1300 °C. physica status solidi (c), 5 (6). 1515-1517 doi:10.1002/pssc.200778433
| Reference Type | Journal (article/letter/editorial) | ||
|---|---|---|---|
| Title | Growth of thin protective AlN layers on sapphire substrates at 1065 °C for hydride vapor phase epitaxy of AlN above 1300 °C | ||
| Journal | physica status solidi (c) | ||
| Authors | Tajima, J. | Author | |
| Kubota, Y. | Author | ||
| Togashi, R. | Author | ||
| Murakami, H. | Author | ||
| Kumagai, Y. | Author | ||
| Koukitu, A. | Author | ||
| Year | 2008 (May) | Volume | 5 |
| Issue | 6 | ||
| Publisher | Wiley | ||
| DOI | doi:10.1002/pssc.200778433Search in ResearchGate | ||
| Generate Citation Formats | |||
| Mindat Ref. ID | 5116053 | Long-form Identifier | mindat:1:5:5116053:9 |
| GUID | 0 | ||
| Full Reference | Tajima, J., Kubota, Y., Togashi, R., Murakami, H., Kumagai, Y., Koukitu, A. (2008) Growth of thin protective AlN layers on sapphire substrates at 1065 °C for hydride vapor phase epitaxy of AlN above 1300 °C. physica status solidi (c), 5 (6). 1515-1517 doi:10.1002/pssc.200778433 | ||
| Plain Text | Tajima, J., Kubota, Y., Togashi, R., Murakami, H., Kumagai, Y., Koukitu, A. (2008) Growth of thin protective AlN layers on sapphire substrates at 1065 °C for hydride vapor phase epitaxy of AlN above 1300 °C. physica status solidi (c), 5 (6). 1515-1517 doi:10.1002/pssc.200778433 | ||
| In | (2008, May) physica status solidi (c) Vol. 5 (6) Wiley | ||
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