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Sakuta, H., Fukui, T., Miyachi, T., Kurai, S., Taguchi, T. (2008) High-resolution Rutherford backscattering spectrometry for InAlGaN/AlGaN single quantum well structure. physica status solidi (c), 5 (6). 1870-1872 doi:10.1002/pssc.200778721

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Reference TypeJournal (article/letter/editorial)
TitleHigh-resolution Rutherford backscattering spectrometry for InAlGaN/AlGaN single quantum well structure
Journalphysica status solidi (c)
AuthorsSakuta, H.Author
Fukui, T.Author
Miyachi, T.Author
Kurai, S.Author
Taguchi, T.Author
Year2008 (May)Volume5
Issue6
PublisherWiley
DOIdoi:10.1002/pssc.200778721Search in ResearchGate
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Mindat Ref. ID5116502Long-form Identifiermindat:1:5:5116502:0
GUID0
Full ReferenceSakuta, H., Fukui, T., Miyachi, T., Kurai, S., Taguchi, T. (2008) High-resolution Rutherford backscattering spectrometry for InAlGaN/AlGaN single quantum well structure. physica status solidi (c), 5 (6). 1870-1872 doi:10.1002/pssc.200778721
Plain TextSakuta, H., Fukui, T., Miyachi, T., Kurai, S., Taguchi, T. (2008) High-resolution Rutherford backscattering spectrometry for InAlGaN/AlGaN single quantum well structure. physica status solidi (c), 5 (6). 1870-1872 doi:10.1002/pssc.200778721
In(2008, May) physica status solidi (c) Vol. 5 (6) Wiley

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Sakuta, H., Kawano, Y., Yamanaka, Y., Kurai, S., Taguchi, T. (2005) Diffusion of In atoms in InGaN ultra-thin films during post-growth thermal annealing by high-resolution Rutherford backscattering spectrometry. physica status solidi (c), 2 (7). 2407-2410 doi:10.1002/pssc.200461296
Sakuta, H., Miyachi, T., Kurai, S., Taguchi, T. (2007) RBS/PIXE channeling for InAlGaN epitaxial layers. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 259 (2). 951-954 doi:10.1016/j.nimb.2007.02.087
Takano, T., Fujikawa, S., Kondo, Y., Hirayama, H. (2008) Remarkable improvement in output power for an InAlGaN based ultraviolet LED by improving the crystalline quality of AlN/AlGaN templates. physica status solidi (c), 5 (6). 2102-2104 doi:10.1002/pssc.200778455
Sakuta, H., Yamanaka, Y., Kurai, S., Taguchi, T. (2005) Thickness dependence of In content of InGaN mixed films by high-resolution Rutherford backscattering spectrometry. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 232 (1). 295-298 doi:10.1016/j.nimb.2005.03.061
Fujikawa, Sachie, Takano, Takayoshi, Kondo, Yukihiro, Hirayama, Hideki (2008) 340 nm-band high-power InAlGaN quantum well ultraviolet light-emitting diode using p-type InAlGaN layers. physica status solidi (c), 5 (6). 2280-2282 doi:10.1002/pssc.200778687
Hua, B., Motohisa, J., Hara, S., Fukui, T. (2008) Microcavity structures in single GaAs nanowires. physica status solidi (c), 5 (9). 2722-2725 doi:10.1002/pssc.200779161
Sugiura, S., Kishimoto, S., Mizutani, T., Kuroda, M., Ueda, T., Tanaka, T. (2008) Normally-off AlGaN/GaN MOSHFETs with HfO2 gate oxide. physica status solidi (c), 5 (6). 1923-1925 doi:10.1002/pssc.200778449
Kolbe, T., Knauer, A., Wenzel, H., Einfeldt, S., Kueller, V., Vogt, P., Weyers, M., Kneissl, M. (2009) Emission characteristics of InGaN multi quantum well light emitting diodes with differently strained InAlGaN barriers. physica status solidi (c), 6. doi:10.1002/pssc.200880895
Fujita, T., Toizumi, T., Nakazato, Y., Tackeuchi, A., Chinone, T., Liang, J. H., Kajikawa, M. (2008) Competition between quantum-confined Stark effect and free-carrier screening effect in AlGaN/GaN multiple quantum wells. physica status solidi (c), 5 (1). 356-359 doi:10.1002/pssc.200776584
Ito, M., Kishimoto, S., Nakamura, F., Mizutani, T. (2008) Enhancement-mode AlGaN/GaN HEMTs with thin InGaN cap layer. physica status solidi (c), 5 (6). 1929-1931 doi:10.1002/pssc.200778451
Kurihara, K., Fukui, K., Yanagawa, T., Yamamoto, A. (2008) Infrared micro optical reflectance spectra of InN. physica status solidi (c), 5 (6). 1759-1761 doi:10.1002/pssc.200778628
 
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