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Sugiura, S., Kishimoto, S., Mizutani, T., Kuroda, M., Ueda, T., Tanaka, T. (2008) Normally-off AlGaN/GaN MOSHFETs with HfO2 gate oxide. physica status solidi (c), 5 (6). 1923-1925 doi:10.1002/pssc.200778449

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Reference TypeJournal (article/letter/editorial)
TitleNormally-off AlGaN/GaN MOSHFETs with HfO2 gate oxide
Journalphysica status solidi (c)
AuthorsSugiura, S.Author
Kishimoto, S.Author
Mizutani, T.Author
Kuroda, M.Author
Ueda, T.Author
Tanaka, T.Author
Year2008 (May)Volume5
Issue6
PublisherWiley
DOIdoi:10.1002/pssc.200778449Search in ResearchGate
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Mindat Ref. ID5116077Long-form Identifiermindat:1:5:5116077:9
GUID0
Full ReferenceSugiura, S., Kishimoto, S., Mizutani, T., Kuroda, M., Ueda, T., Tanaka, T. (2008) Normally-off AlGaN/GaN MOSHFETs with HfO2 gate oxide. physica status solidi (c), 5 (6). 1923-1925 doi:10.1002/pssc.200778449
Plain TextSugiura, S., Kishimoto, S., Mizutani, T., Kuroda, M., Ueda, T., Tanaka, T. (2008) Normally-off AlGaN/GaN MOSHFETs with HfO2 gate oxide. physica status solidi (c), 5 (6). 1923-1925 doi:10.1002/pssc.200778449
In(2008, May) physica status solidi (c) Vol. 5 (6) Wiley

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Sugiyama, T., Iida, D., Iwaya, M., Kamiyama, S., Amano, H., Akasaki, I. (2010) Threshold voltage control using SiNx in normally off AlGaN/GaN HFET with p-GaN gate. physica status solidi (c), 7 (7). 1980-1982 doi:10.1002/pssc.200983595
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