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Tonisch, K., Buchheim, C., Niebelschütz, F., Donahue, M., Goldhahn, R., Cimalla, V., Ambacher, O. (2008) Piezoelectric actuation of all-nitride MEMS. physica status solidi (c), 5 (6). 1910-1913 doi:10.1002/pssc.200778423

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Reference TypeJournal (article/letter/editorial)
TitlePiezoelectric actuation of all-nitride MEMS
Journalphysica status solidi (c)
AuthorsTonisch, K.Author
Buchheim, C.Author
Niebelschütz, F.Author
Donahue, M.Author
Goldhahn, R.Author
Cimalla, V.Author
Ambacher, O.Author
Year2008 (May)Volume5
Issue6
PublisherWiley
DOIdoi:10.1002/pssc.200778423Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5116039Long-form Identifiermindat:1:5:5116039:9
GUID0
Full ReferenceTonisch, K., Buchheim, C., Niebelschütz, F., Donahue, M., Goldhahn, R., Cimalla, V., Ambacher, O. (2008) Piezoelectric actuation of all-nitride MEMS. physica status solidi (c), 5 (6). 1910-1913 doi:10.1002/pssc.200778423
Plain TextTonisch, K., Buchheim, C., Niebelschütz, F., Donahue, M., Goldhahn, R., Cimalla, V., Ambacher, O. (2008) Piezoelectric actuation of all-nitride MEMS. physica status solidi (c), 5 (6). 1910-1913 doi:10.1002/pssc.200778423
In(2008, May) physica status solidi (c) Vol. 5 (6) Wiley

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Tonisch, K., Buchheim, C., Niebelschütz, F., Schober, A., Gobsch, G., Cimalla, V., Ambacher, O., Goldhahn, R. (2008) Piezoelectric actuation of (GaN/)AlGaN/GaN heterostructures. Journal of Applied Physics, 104 (8). 84516pp. doi:10.1063/1.3005885
Niebelschütz, F., Cimalla, V., Tonisch, K., Haupt, Ch., Brückner, K., Stephan, R., Hein, M., Ambacher, O. (2008) AlGaN/GaN-based MEMS with two-dimensional electron gas for novel sensor applications. physica status solidi (c), 5 (6). 1914-1916 doi:10.1002/pssc.200778424
Tonisch, K., Cimalla, V., Niebelschütz, F., Romanus, H., Eickhoff, M., Ambacher, O. (2007) Fully unstrained GaN on sacrificial AlN layers by nano-heteroepitaxy. physica status solidi (c), 4 (7). 2248-2251 doi:10.1002/pssc.200674813
Cimalla, V., Niebelschütz, M., Ecke, G., Ambacher, O., Goldhahn, R., Lu, H., Schaff, W. J. (2006) The conductivity of Mg-doped InN. physica status solidi (c), 3 (6). 1721-1724 doi:10.1002/pssc.200565473
Tonisch, K., Cimalla, V., Foerster, Ch., Dontsov, D., Ambacher, O. (2006) Piezoelectric properties of thin AlN layers for MEMS application determined by piezoresponse force microscopy. physica status solidi (c), 3 (6). 2274-2277 doi:10.1002/pssc.200565123
Cimalla, V., Ecke, G., Niebelschütz, M., Ambacher, O., Goldhahn, R., Lu, H., Schaff, W. J. (2005) Surface conductivity of epitaxial InN. physica status solidi (c), 2 (7). 2254-2257 doi:10.1002/pssc.200461448
Niebelschuetz, F., Brueckner, K., Tonisch, K., Stephan, R., Cimalla, V., Ambacher, O., Hein, M. A. (2010) Piezoelectric actuated epitaxially grown AlGaN/GaN-resonators. physica status solidi (c), 7 (7). 1829-1831 doi:10.1002/pssc.200983616
Lebedev, V., Cengher, D., Fischer, M., Tonisch, K., Cimalla, V., Niebelschütz, M., Ambacher, O. (2007) Fabrication of one-dimensional “trenched” GaN nanowires and their interconnections. physica status solidi (a), 204 (10). 3387-3391 doi:10.1002/pssa.200723163
Buchheim, C., Goldhahn, R., Gobsch, G., Tonisch, K., Cimalla, V., Niebelschütz, F., Ambacher, O. (2008) Electric field distribution in GaN∕AlGaN∕GaN heterostructures with two-dimensional electron and hole gas. Applied Physics Letters, 92 (1). 13510pp. doi:10.1063/1.2830836
Niebelschütz, M., Cimalla, V., Ambacher, O., Machleidt, T., Franke, K.-H., Ristic, J., Grandal, J., Sánchez-García, M. A., Calleja, E. (2008) Space charged region in GaN and InN nanocolumns investigated by atomic force microscopy. physica status solidi (c), 5 (6). 1609-1611 doi:10.1002/pssc.200778533
Morales, F. M., Lozano, J. G., García, R., Lebedev, V., Wang, Ch. Y., Cimalla, V., Ambacher, O., González, D. (2008) Structure of cubic polytype indium nitride layers on top of modified sapphire substrates. physica status solidi (c), 5 (2). doi:10.1002/pssc.200890001
 
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