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Zamir, S., Meyler, B., Salzman, J., Wu, F., Golan, Y. (2002) Enhanced photoluminescence from GaN grown by lateral confined epitaxy. Journal of Applied Physics, 91 (3). 1191-1197 doi:10.1063/1.1432115

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Reference TypeJournal (article/letter/editorial)
TitleEnhanced photoluminescence from GaN grown by lateral confined epitaxy
JournalJournal of Applied Physics
AuthorsZamir, S.Author
Meyler, B.Author
Salzman, J.Author
Wu, F.Author
Golan, Y.Author
Year2002 (February)Volume91
Issue3
PublisherAIP Publishing
DOIdoi:10.1063/1.1432115Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5113544Long-form Identifiermindat:1:5:5113544:5
GUID0
Full ReferenceZamir, S., Meyler, B., Salzman, J., Wu, F., Golan, Y. (2002) Enhanced photoluminescence from GaN grown by lateral confined epitaxy. Journal of Applied Physics, 91 (3). 1191-1197 doi:10.1063/1.1432115
Plain TextZamir, S., Meyler, B., Salzman, J., Wu, F., Golan, Y. (2002) Enhanced photoluminescence from GaN grown by lateral confined epitaxy. Journal of Applied Physics, 91 (3). 1191-1197 doi:10.1063/1.1432115
In(2002, February) Journal of Applied Physics Vol. 91 (3) AIP Publishing

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Zamir, S., Meyler, B., Salzman, J. (2001) Thermal microcrack distribution control in GaN layers on Si substrates by lateral confined epitaxy. Applied Physics Letters, 78 (3). 288-290 doi:10.1063/1.1338968
Zamir, S., Meyler, B., Salzman, J. (2002) Reduction of cracks in GaN films grown on Si-on-insulator by lateral confined epitaxy. Journal of Crystal Growth, 243 (3). 375-380 doi:10.1016/s0022-0248(02)01578-6
Zamir, S., Meyler, B., Salzman, J. (2001) Lateral confined epitaxy of GaN layers on Si substrates. Journal of Crystal Growth, 230 (3). 341-345 doi:10.1016/s0022-0248(01)01247-7
Golan, Y., Fini, P., Dahan, D., Wu, F., Zamir, S., Salzman, J., Speck, J. S. (2003) High-quality GaN on intentionally roughened c-sapphire. The European Physical Journal Applied Physics, 22 (1). 11-14 doi:10.1051/epjap:2003012
Katz, O., Garber, V., Meyler, B., Bahir, G., Salzman, J. (2002) Anisotropy in detectivity of GaN Schottky ultraviolet detectors: Comparing lateral and vertical geometry. Applied Physics Letters, 80 (3). 347-349 doi:10.1063/1.1433910
Zamir, S, Meyler, B, Zolotoyabko, E, Salzman, J (2000) The effect of AlN buffer layer on GaN grown on (111)-oriented Si substrates by MOCVD. Journal of Crystal Growth, 218 (2). 181-190 doi:10.1016/s0022-0248(00)00570-4
Skorka, O., Meyler, B., Salzman, J. (2004) Propagation loss in GaN-based ridge waveguides. Applied Physics Letters, 84 (19). 3801-3803 doi:10.1063/1.1741025
Fang, Z. M., Ma, K. Y., Cohen, R. M., Stringfellow, G. B. (1990) Photoluminescence of InAsBi and InAsSbBi grown by organometallic vapor phase epitaxy. Journal of Applied Physics, 68 (3). 1187-1191 doi:10.1063/1.346715
Shalish, I., Kronik, L., Segal, G., Shapira, Yoram, Zamir, S., Meyler, B., Salzman, J. (2000) Grain-boundary-controlled transport in GaN layers. Physical Review B, 61 (23) 15573-15576 doi:10.1103/physrevb.61.15573
Zhang, J. C., Meyler, B., Vardi, A., Bahir, G., Salzman, J. (2008) Stranski–Krastanov growth of GaN quantum dots on AlN template by metalorganic chemical vapor deposition. Journal of Applied Physics, 104 (4). 44307pp. doi:10.1063/1.2969915
Katz, O., Garber, V., Meyler, B., Bahir, G., Salzman, J. (2001) Gain mechanism in GaN Schottky ultraviolet detectors. Applied Physics Letters, 79 (10). 1417-1419 doi:10.1063/1.1394717
 
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