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Katz, O., Garber, V., Meyler, B., Bahir, G., Salzman, J. (2002) Anisotropy in detectivity of GaN Schottky ultraviolet detectors: Comparing lateral and vertical geometry. Applied Physics Letters, 80 (3). 347-349 doi:10.1063/1.1433910

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Reference TypeJournal (article/letter/editorial)
TitleAnisotropy in detectivity of GaN Schottky ultraviolet detectors: Comparing lateral and vertical geometry
JournalApplied Physics Letters
AuthorsKatz, O.Author
Garber, V.Author
Meyler, B.Author
Bahir, G.Author
Salzman, J.Author
Year2002 (January 21)Volume80
Issue3
PublisherAIP Publishing
DOIdoi:10.1063/1.1433910Search in ResearchGate
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Mindat Ref. ID8532421Long-form Identifiermindat:1:5:8532421:1
GUID0
Full ReferenceKatz, O., Garber, V., Meyler, B., Bahir, G., Salzman, J. (2002) Anisotropy in detectivity of GaN Schottky ultraviolet detectors: Comparing lateral and vertical geometry. Applied Physics Letters, 80 (3). 347-349 doi:10.1063/1.1433910
Plain TextKatz, O., Garber, V., Meyler, B., Bahir, G., Salzman, J. (2002) Anisotropy in detectivity of GaN Schottky ultraviolet detectors: Comparing lateral and vertical geometry. Applied Physics Letters, 80 (3). 347-349 doi:10.1063/1.1433910
In(2002, January) Applied Physics Letters Vol. 80 (3) AIP Publishing

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Katz, O., Garber, V., Meyler, B., Bahir, G., Salzman, J. (2001) Gain mechanism in GaN Schottky ultraviolet detectors. Applied Physics Letters, 79 (10). 1417-1419 doi:10.1063/1.1394717
Katz, O., Garber, V., Meyler, B., Bahir, G., Salzman, J. (2001) Vertical versus Lateral GaN Schottky Ultraviolet Detectors and Their Gain Mechanism. physica status solidi (a), 188 (1). 345-349 doi:10.1002/1521-396x(200111)188:1<345::aid-pssa345>3.0.co;2-l
Katz, O., Bahir, G., Salzman, J. (2004) Persistent photocurrent and surface trapping in GaN Schottky ultraviolet detectors. Applied Physics Letters, 84 (20). 4092-4094 doi:10.1063/1.1753056
Zamir, S., Meyler, B., Salzman, J., Wu, F., Golan, Y. (2002) Enhanced photoluminescence from GaN grown by lateral confined epitaxy. Journal of Applied Physics, 91 (3). 1191-1197 doi:10.1063/1.1432115
Zamir, S., Meyler, B., Salzman, J. (2001) Thermal microcrack distribution control in GaN layers on Si substrates by lateral confined epitaxy. Applied Physics Letters, 78 (3). 288-290 doi:10.1063/1.1338968
Skorka, O., Meyler, B., Salzman, J. (2004) Propagation loss in GaN-based ridge waveguides. Applied Physics Letters, 84 (19). 3801-3803 doi:10.1063/1.1741025
Zhang, J. C., Meyler, B., Vardi, A., Bahir, G., Salzman, J. (2008) Stranski–Krastanov growth of GaN quantum dots on AlN template by metalorganic chemical vapor deposition. Journal of Applied Physics, 104 (4). 44307pp. doi:10.1063/1.2969915
Salzman, J., Uzan-Saguy, C., Kalish, R., Richter, V., Meyler, B. (2000) Thermally activated electrical conductivity in thin GaN epitaxial films. Applied Physics Letters, 76 (11). 1431-1433 doi:10.1063/1.126054
Adivarahan, V., Simin, G., Yang, J. W., Lunev, A., Khan, M. Asif, Pala, N., Shur, M., Gaska, R. (2000) SiO2-passivated lateral-geometry GaN transparent Schottky-barrier detectors. Applied Physics Letters, 77 (6). 863-865 doi:10.1063/1.1306647
Tisch, U., Meyler, B., Katz, O., Finkman, E., Salzman, J. (2001) Dependence of the refractive index of AlxGa1−xN on temperature and composition at elevated temperatures. Journal of Applied Physics, 89 (5). 2676-2685 doi:10.1063/1.1341212
Zamir, S., Meyler, B., Salzman, J. (2002) Reduction of cracks in GaN films grown on Si-on-insulator by lateral confined epitaxy. Journal of Crystal Growth, 243 (3). 375-380 doi:10.1016/s0022-0248(02)01578-6
 
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