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Meinertzhagen, A., Petit, C., Zander, D., Simonetti, O., Maurel, T., Jourdain, M. (2002) Low voltage stress induced leakage currents and surface states in ultrathin (1.2–2.5 nm) oxides. Journal of Applied Physics, 91 (4). 2123-2132 doi:10.1063/1.1430536

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Reference TypeJournal (article/letter/editorial)
TitleLow voltage stress induced leakage currents and surface states in ultrathin (1.2–2.5 nm) oxides
JournalJournal of Applied Physics
AuthorsMeinertzhagen, A.Author
Petit, C.Author
Zander, D.Author
Simonetti, O.Author
Maurel, T.Author
Jourdain, M.Author
Year2002 (February 15)Volume91
Issue4
PublisherAIP Publishing
DOIdoi:10.1063/1.1430536Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5113629Long-form Identifiermindat:1:5:5113629:5
GUID0
Full ReferenceMeinertzhagen, A., Petit, C., Zander, D., Simonetti, O., Maurel, T., Jourdain, M. (2002) Low voltage stress induced leakage currents and surface states in ultrathin (1.2–2.5 nm) oxides. Journal of Applied Physics, 91 (4). 2123-2132 doi:10.1063/1.1430536
Plain TextMeinertzhagen, A., Petit, C., Zander, D., Simonetti, O., Maurel, T., Jourdain, M. (2002) Low voltage stress induced leakage currents and surface states in ultrathin (1.2–2.5 nm) oxides. Journal of Applied Physics, 91 (4). 2123-2132 doi:10.1063/1.1430536
In(2002, February) Journal of Applied Physics Vol. 91 (4) AIP Publishing

See Also

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Meinertzhagen, A., Petit, C., Jourdain, M., Mondon, F. (1998) Stress-induced leakage current reduction by a low field of opposite polarity to the stress field. Journal of Applied Physics, 84 (9). 5070-5079 doi:10.1063/1.368755
Zander, D., Saigne, F., Petit, C., Meinertzhagen, A. (2001) Electrical stress effects on ultrathin (2.3 nm) oxides. Journal of Non-Crystalline Solids, 280 (1) 86-91 doi:10.1016/s0022-3093(00)00393-8
Simonetti, O., Maurel, T., Jourdain, M. (2002) Characterization of ultrathin metal–oxide–semiconductor structures using coupled current and capacitance–voltage models based on quantum calculation. Journal of Applied Physics, 92 (8). 4449-4458 doi:10.1063/1.1506000
Zander, D., Boch, J., Saigné, F., Meinertzhagen, A., Simonetti, O. (2003) Effect of boron neutralization on interface state creation after direct tunneling injections at 100 °C in 2,3-nm ultrathin gate oxides. Applied Physics Letters, 83 (5). 926-927 doi:10.1063/1.1598291
Hadjadj, A., Simonetti, O., Maurel, T., Salace, G., Petit, C. (2002) Si–SiO2 barrier height and its temperature dependence in metal-oxide-semiconductor structures with ultrathin gate oxide. Applied Physics Letters, 80 (18). 3334-3336 doi:10.1063/1.1476709
El Hdiy, A., Salace, G., Petit, C., Jourdain, M., Meinertzhagen, A. (1993) Relaxation of interface states and positive charge in thin gate oxide after Fowler–Nordheim stress. Journal of Applied Physics, 73 (7). 3569-3570 doi:10.1063/1.352911
Meinertzhagen, A., Petit, C., Yard, G., Jourdain, M., El Hdiy, A. (1996) On the positive charge and interface states in metal‐oxide‐semiconductor capacitors. Journal of Applied Physics, 80 (1). 271-277 doi:10.1063/1.362815
Goguenheim, D, Bravaix, A, Vuillaume, D, Mondon, F, Jourdain, M, Meinertzhagen, A (1999) Stress induced leakage currents in N-MOSFETs submitted to channel hot carrier injections. Journal of Non-Crystalline Solids, 245 (1) 41-47 doi:10.1016/s0022-3093(98)00852-7
Meinertzhagen, A., Petit, C., Yard, G., Jourdain, M., Salace, G. (1996) On the decay of the trapped holes and the slow states in metal–oxide–semiconductor capacitors. Journal of Applied Physics, 79 (5). 2549-2558 doi:10.1063/1.361121
Endoh, Tetsuo, Chiba, Takao, Sakuraba, Hiroshi, Lenski, Markus, Masuoka, Fujio (1999) A quantitative analysis of stress-induced leakage currents and extraction of trap properties in 6.8 nm ultrathin silicon dioxide films. Journal of Applied Physics, 86 (4). 2095-2099 doi:10.1063/1.371015
Nicollian, Paul E., Krishnan, Anand T., Reddy, Vijay K. (2008) Two-trap model for low voltage stress-induced leakage current in ultrathin SiON dielectrics. Journal of Applied Physics, 104 (5). 53718pp. doi:10.1063/1.2969791
 
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