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Goguenheim, D, Bravaix, A, Vuillaume, D, Mondon, F, Jourdain, M, Meinertzhagen, A (1999) Stress induced leakage currents in N-MOSFETs submitted to channel hot carrier injections. Journal of Non-Crystalline Solids, 245 (1) 41-47 doi:10.1016/s0022-3093(98)00852-7

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Reference TypeJournal (article/letter/editorial)
TitleStress induced leakage currents in N-MOSFETs submitted to channel hot carrier injections
JournalJournal of Non-Crystalline Solids
AuthorsGoguenheim, DAuthor
Bravaix, AAuthor
Vuillaume, DAuthor
Mondon, FAuthor
Jourdain, MAuthor
Meinertzhagen, AAuthor
Year1999 (April)Volume245
Issue1
PublisherElsevier BV
DOIdoi:10.1016/s0022-3093(98)00852-7Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID637854Long-form Identifiermindat:1:5:637854:1
GUID0
Full ReferenceGoguenheim, D, Bravaix, A, Vuillaume, D, Mondon, F, Jourdain, M, Meinertzhagen, A (1999) Stress induced leakage currents in N-MOSFETs submitted to channel hot carrier injections. Journal of Non-Crystalline Solids, 245 (1) 41-47 doi:10.1016/s0022-3093(98)00852-7
Plain TextGoguenheim, D, Bravaix, A, Vuillaume, D, Mondon, F, Jourdain, M, Meinertzhagen, A (1999) Stress induced leakage currents in N-MOSFETs submitted to channel hot carrier injections. Journal of Non-Crystalline Solids, 245 (1) 41-47 doi:10.1016/s0022-3093(98)00852-7
In(1999, April) Journal of Non-Crystalline Solids Vol. 245 (1) Elsevier BV

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Goguenheim, Didier, Trapes, Céline, Bravaix, Alain (2003) Comparison of degradation modes in 1.2–2.1 nm thick SiO2 oxides submitted to uniform and hot carrier injections in NMOSFETS. Journal of Non-Crystalline Solids, 322 (1) 183-190 doi:10.1016/s0022-3093(03)00200-x
Bravaix, Alain, Goguenheim, Didier, Revil, Nathalie, Rubaldo, Laurent, Vincent, Emmanuel (2003) Efficiency of interface trap generation under hole injections in 2.1 nm thick gate-oxide P-MOSFETs. Journal of Non-Crystalline Solids, 322 (1) 139-146 doi:10.1016/s0022-3093(03)00194-7
Goguenheim, Didier, Bravaix, Alain, Ananou, Bouchra, Trapes, Céline, Mondon, Francois, Reimbold, Gilles (2001) Temperature and field dependence of stress induced leakage currents in very thin (<5 nm) gate oxides. Journal of Non-Crystalline Solids, 280 (1) 78-85 doi:10.1016/s0022-3093(00)00357-4
Nebel, F., Jourdain, M., Meinertzhagen, A., Candelier, P. (1997) Generation of hot holes in MOSFET. Journal of Non-Crystalline Solids, 216. 168-173 doi:10.1016/s0022-3093(97)00183-x
Bravaix, A., Vuillaume, D., Thirion, V., Dorval, D., Straboni, A. (1995) Damage induced by carrier injection in 8 nm thick oxides and nitrided oxides. Journal of Non-Crystalline Solids, 187. 365-368 doi:10.1016/0022-3093(95)00165-4
Yard, G., Meinertzhagen, A., Petit, C., Jourdain, M., Mondon, F. (1997) Comparison of the charges generated by Fowler-Nordheim tunneling injection in different oxides of metal-oxide-semiconductor capacitors. Journal of Non-Crystalline Solids, 216. 174-179 doi:10.1016/s0022-3093(97)00184-1
Meinertzhagen, A., Petit, C., Jourdain, M., Mondon, F. (1998) Stress-induced leakage current reduction by a low field of opposite polarity to the stress field. Journal of Applied Physics, 84 (9). 5070-5079 doi:10.1063/1.368755
Trapes, Céline, Goguenheim, Didier, Bravaix, Alain (2003) Impact of carrier injection in 2.2 nm-thick SiO2 oxides after first and substrate enhanced electron injection. Journal of Non-Crystalline Solids, 322 (1) 199-205 doi:10.1016/s0022-3093(03)00202-3
Jahan, C., Barla, K. (1999) Effect of boron penetration on the stress induced leakage current in PMOS structures with p+ doped polysilicon gate. Journal of Non-Crystalline Solids, 245 (1) 33-40 doi:10.1016/s0022-3093(98)00851-5
Pierunek, S, Pogany, D, Autran, J.L, Leroy, B (1999) Study of hot carrier degradation in dram cells combining random telegraph signal and charge pumping measurements. Journal of Non-Crystalline Solids, 245 (1) 59-66 doi:10.1016/s0022-3093(98)00871-0
Nebel, F, Jourdain, M (1999) On the correlation between interface defects, positive oxide charge and hole fluence throughout the oxide. Journal of Non-Crystalline Solids, 245 (1) 67-72 doi:10.1016/s0022-3093(98)00872-2
 
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