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Nebel, F, Jourdain, M (1999) On the correlation between interface defects, positive oxide charge and hole fluence throughout the oxide. Journal of Non-Crystalline Solids, 245 (1) 67-72 doi:10.1016/s0022-3093(98)00872-2

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Reference TypeJournal (article/letter/editorial)
TitleOn the correlation between interface defects, positive oxide charge and hole fluence throughout the oxide
JournalJournal of Non-Crystalline Solids
AuthorsNebel, FAuthor
Jourdain, MAuthor
Year1999 (April)Volume245
Issue1
PublisherElsevier BV
DOIdoi:10.1016/s0022-3093(98)00872-2Search in ResearchGate
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Mindat Ref. ID637875Long-form Identifiermindat:1:5:637875:6
GUID0
Full ReferenceNebel, F, Jourdain, M (1999) On the correlation between interface defects, positive oxide charge and hole fluence throughout the oxide. Journal of Non-Crystalline Solids, 245 (1) 67-72 doi:10.1016/s0022-3093(98)00872-2
Plain TextNebel, F, Jourdain, M (1999) On the correlation between interface defects, positive oxide charge and hole fluence throughout the oxide. Journal of Non-Crystalline Solids, 245 (1) 67-72 doi:10.1016/s0022-3093(98)00872-2
In(1999, April) Journal of Non-Crystalline Solids Vol. 245 (1) Elsevier BV

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Jolly, F, Cantin, J.L, Rochet, F, Dufour, G, von Bardeleben, H.J (1999) Temperature effects on the Si/SiO2 interface defects and suboxide distribution. Journal of Non-Crystalline Solids, 245 (1) 217-223 doi:10.1016/s0022-3093(98)00864-3
Bardeleben, H.J.von, Cantin, J.L., Gosset, L.G., Ganem, J.J., Trimaille, I., Rigo, S. (1999) Electron paramagnetic resonance spectra of interface defects in nitric oxide treated Si/SiO2. Journal of Non-Crystalline Solids, 245 (1) 169-174 doi:10.1016/s0022-3093(98)00862-x
Prat, J.L, Terki, F., Pelous, J. (1998) Connection between fictive temperature and structural defects responsible for the relaxational processes in oxide glasses. Journal of Non-Crystalline Solids, 235. 388-392 doi:10.1016/s0022-3093(98)00654-1
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Goguenheim, D, Bravaix, A, Vuillaume, D, Mondon, F, Jourdain, M, Meinertzhagen, A (1999) Stress induced leakage currents in N-MOSFETs submitted to channel hot carrier injections. Journal of Non-Crystalline Solids, 245 (1) 41-47 doi:10.1016/s0022-3093(98)00852-7
Jelenkovic, E.V, Tong, K.Y (1999) Charge relaxation in nitrided and non-nitrided sputtered oxide. Journal of Non-Crystalline Solids, 254 (1) 99-105 doi:10.1016/s0022-3093(99)00380-4
(1999) Index. Journal of Non-Crystalline Solids, 258 (1) 245-246 doi:10.1016/s0022-3093(99)00599-2
Pejović, M., Jakšić, A., Ristić, G. (1998) The behaviour of radiation-induced gate-oxide defects in MOSFETs during annealing at 140°C. Journal of Non-Crystalline Solids, 240 (1) 182-192 doi:10.1016/s0022-3093(98)00718-2
(2004) Editorial board. Journal of Non-Crystalline Solids, 343 (1) doi:10.1016/s0022-3093(04)00872-5
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