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Sheu, J. K., Tun, C. J., Tsai, M. S., Lee, C. C., Chi, G. C., Chang, S. J., Su, Y. K. (2002) n+-GaN formed by Si implantation intop-GaN. Journal of Applied Physics, 91 (4). 1845-1848 doi:10.1063/1.1432118

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Reference TypeJournal (article/letter/editorial)
Titlen+-GaN formed by Si implantation intop-GaN
JournalJournal of Applied Physics
AuthorsSheu, J. K.Author
Tun, C. J.Author
Tsai, M. S.Author
Lee, C. C.Author
Chi, G. C.Author
Chang, S. J.Author
Su, Y. K.Author
Year2002 (February 15)Volume91
Issue4
PublisherAIP Publishing
DOIdoi:10.1063/1.1432118Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5113675Long-form Identifiermindat:1:5:5113675:4
GUID0
Full ReferenceSheu, J. K., Tun, C. J., Tsai, M. S., Lee, C. C., Chi, G. C., Chang, S. J., Su, Y. K. (2002) n+-GaN formed by Si implantation intop-GaN. Journal of Applied Physics, 91 (4). 1845-1848 doi:10.1063/1.1432118
Plain TextSheu, J. K., Tun, C. J., Tsai, M. S., Lee, C. C., Chi, G. C., Chang, S. J., Su, Y. K. (2002) n+-GaN formed by Si implantation intop-GaN. Journal of Applied Physics, 91 (4). 1845-1848 doi:10.1063/1.1432118
In(2002, February) Journal of Applied Physics Vol. 91 (4) AIP Publishing

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