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Kao, C. J., Chen, M. C., Tun, C. J., Chi, G. C., Sheu, J. K., Lai, W. C., Lee, M. L., Ren, F., Pearton, S. J. (2005) Comparison of low-temperature GaN, SiO2, and SiNx as gate insulators on AlGaN∕GaN heterostructure field-effect transistors. Journal of Applied Physics, 98 (6). 64506pp. doi:10.1063/1.2058173

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Reference TypeJournal (article/letter/editorial)
TitleComparison of low-temperature GaN, SiO2, and SiNx as gate insulators on AlGaN∕GaN heterostructure field-effect transistors
JournalJournal of Applied Physics
AuthorsKao, C. J.Author
Chen, M. C.Author
Tun, C. J.Author
Chi, G. C.Author
Sheu, J. K.Author
Lai, W. C.Author
Lee, M. L.Author
Ren, F.Author
Pearton, S. J.Author
Year2005 (September 15)Volume98
Issue6
PublisherAIP Publishing
DOIdoi:10.1063/1.2058173Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5136171Long-form Identifiermindat:1:5:5136171:2
GUID0
Full ReferenceKao, C. J., Chen, M. C., Tun, C. J., Chi, G. C., Sheu, J. K., Lai, W. C., Lee, M. L., Ren, F., Pearton, S. J. (2005) Comparison of low-temperature GaN, SiO2, and SiNx as gate insulators on AlGaN∕GaN heterostructure field-effect transistors. Journal of Applied Physics, 98 (6). 64506pp. doi:10.1063/1.2058173
Plain TextKao, C. J., Chen, M. C., Tun, C. J., Chi, G. C., Sheu, J. K., Lai, W. C., Lee, M. L., Ren, F., Pearton, S. J. (2005) Comparison of low-temperature GaN, SiO2, and SiNx as gate insulators on AlGaN∕GaN heterostructure field-effect transistors. Journal of Applied Physics, 98 (6). 64506pp. doi:10.1063/1.2058173
In(2005, September) Journal of Applied Physics Vol. 98 (6) AIP Publishing

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Kao, C. J., Sheu, J. K., Lai, W. C., Lee, M. L., Chen, M. C., Chi, G. C. (2004) Effect of GaN cap layer grown at a low temperature on electrical characteristics of Al0.25Ga0.75N∕GaN heterojunction field-effect transistors. Applied Physics Letters, 85 (8). 1430-1432 doi:10.1063/1.1784038
Lee, M. L., Sheu, J. K., Lai, W. C., Su, Y. K., Chang, S. J., Kao, C. J., Tun, C. J., Chen, M. G., Chang, W. H., Chi, G. C., Tsai, J. M. (2003) Characterization of GaN Schottky barrier photodetectors with a low-temperature GaN cap layer. Journal of Applied Physics, 94 (3). 1753-1757 doi:10.1063/1.1587890
Lee, M. L., Sheu, J. K., Lai, W. C., Chang, S. J., Su, Y. K., Chen, M. G., Kao, C. J., Chi, G. C., Tsai, J. M. (2003) GaN Schottky barrier photodetectors with a low-temperature GaN cap layer. Applied Physics Letters, 82 (17). 2913-2915 doi:10.1063/1.1570519
Sheu, J. K., Lee, M. L., Yeh, L. S., Kao, C. J., Tun, C. J., Chen, M. G., Chi, G. C., Chang, S. J., Su, Y. K., Lee, C. T. (2002) Planar GaN n+–p photodetectors formed by Si implantation into p-GaN. Applied Physics Letters, 81 (22). 4263-4265 doi:10.1063/1.1524689
Sheu, J. K., Lee, M. L., Lai, W. C., Tseng, H. C., Chi, G. C. (2005) Rectifying characteristics of WSi0.8–GaN Schottky barrier diodes with a GaN cap layer grown at low temperature. Journal of Applied Physics, 98 (3). 36106pp. doi:10.1063/1.2006220
Sheu, J. K., Tun, C. J., Tsai, M. S., Lee, C. C., Chi, G. C., Chang, S. J., Su, Y. K. (2002) n+-GaN formed by Si implantation intop-GaN. Journal of Applied Physics, 91 (4). 1845-1848 doi:10.1063/1.1432118
Chen, M. C., Sheu, J. K., Lee, M. L., Kao, C. J., Tun, C. J., Chi, G. C. (2006) Planar Ultraviolet Photodetectors Formed by Si Implantation into p-GaN. Journal of the Electrochemical Society, 153. doi:10.1149/1.2214536
Sheu, J. K., Lee, M. L., Lai, W. C. (2005) Effect of low-temperature-grown GaN cap layer on reduced leakage current of GaN Schottky diodes. Applied Physics Letters, 86 (5). 52103pp. doi:10.1063/1.1861113
Sheu, J. K., Chen, S. S., Lee, M. L., Lai, W. C., Chi, G. C. (2005) Effects of Thermal Annealing on Si-Implanted GaN Films Grown at Low Temperature by Metallorganic Vapor Phase. Journal of the Electrochemical Society, 152. doi:10.1149/1.2039941
Chen, M. C., Sheu, J. K., Lee, M. L., Tun, C. J., Chi, G. C. (2006) Improved performance of planar GaN-based p-i-n photodetectors with Mg-implanted isolation ring. Applied Physics Letters, 89 (18). 183509pp. doi:10.1063/1.2372767
Khanna, Rohit, Pearton, S. J., Ren, F., Kravchenko, I., Kao, C. J., Chi, G. C. (2005) W2B-based rectifying contacts to n-GaN. Applied Physics Letters, 87 (5). 52110pp. doi:10.1063/1.2007865
 
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