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Dimoulas, A., Vellianitis, G., Travlos, A., Ioannou-Sougleridis, V., Nassiopoulou, A. G. (2002) Structural and electrical quality of the high-k dielectric Y2O3 on Si (001): Dependence on growth parameters. Journal of Applied Physics, 92 (1). 426-431 doi:10.1063/1.1483379

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Reference TypeJournal (article/letter/editorial)
TitleStructural and electrical quality of the high-k dielectric Y2O3 on Si (001): Dependence on growth parameters
JournalJournal of Applied Physics
AuthorsDimoulas, A.Author
Vellianitis, G.Author
Travlos, A.Author
Ioannou-Sougleridis, V.Author
Nassiopoulou, A. G.Author
Year2002 (July)Volume92
Issue1
PublisherAIP Publishing
DOIdoi:10.1063/1.1483379Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5115093Long-form Identifiermindat:1:5:5115093:0
GUID0
Full ReferenceDimoulas, A., Vellianitis, G., Travlos, A., Ioannou-Sougleridis, V., Nassiopoulou, A. G. (2002) Structural and electrical quality of the high-k dielectric Y2O3 on Si (001): Dependence on growth parameters. Journal of Applied Physics, 92 (1). 426-431 doi:10.1063/1.1483379
Plain TextDimoulas, A., Vellianitis, G., Travlos, A., Ioannou-Sougleridis, V., Nassiopoulou, A. G. (2002) Structural and electrical quality of the high-k dielectric Y2O3 on Si (001): Dependence on growth parameters. Journal of Applied Physics, 92 (1). 426-431 doi:10.1063/1.1483379
In(2002, July) Journal of Applied Physics Vol. 92 (1) AIP Publishing

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Ioannou-Sougleridis, V., Vellianitis, G., Dimoulas, A. (2003) Electrical properties of Y2O3 high-κ gate dielectric on Si(001): The influence of postmetallization annealing. Journal of Applied Physics, 93 (7). 3982-3989 doi:10.1063/1.1558965
Dimoulas, A., Travlos, A., Vellianitis, G., Boukos, N., Argyropoulos, K. (2001) Direct heteroepitaxy of crystalline Y2O3 on Si (001) for high-k gate dielectric applications. Journal of Applied Physics, 90 (8). 4224-4230 doi:10.1063/1.1403678
Apostolopoulos, G., Vellianitis, G., Dimoulas, A., Alexe, M., Scholz, R., Fanciulli, M., Dekadjevi, D. T., Wiemer, C. (2002) High epitaxial quality Y2O3 high-κ dielectric on vicinal Si(001) surfaces. Applied Physics Letters, 81 (19). 3549-3551 doi:10.1063/1.1519727
Dimoulas, A., Vellianitis, G., Mavrou, G., Apostolopoulos, G., Travlos, A., Wiemer, C., Fanciulli, M., Rittersma, Z. M. (2004) La2Hf2O7 high-κ gate dielectric grown directly on Si(001) by molecular-beam epitaxy. Applied Physics Letters, 85 (15). 3205-3207 doi:10.1063/1.1806556
Ouisse, T, Ioannou-Sougleridis, V, Kouvatsos, D, Nassiopoulou, A G (2000) Electrical modelling of Si/SiO2superlattices. Journal of Physics D: Applied Physics, 33. 2691-2698 doi:10.1088/0022-3727/33/21/305
Ioannou-Sougleridis, V., Ouisse, T., Nassiopoulou, A. G., Bassani, F., Arnaud d’Avitaya, F. (2001) Nonlinear electrical transport in nc-Si/CaF2 multilayer structures with ultrathin CaF2 layers. Journal of Applied Physics, 89 (1). 610-614 doi:10.1063/1.1330551
Ioannou-Sougleridis, V., Nassiopoulou, A. G., Ouisse, T., Bassani, F., Arnaud d’Avitaya, F. (2001) Electroluminescence from silicon nanocrystals in Si/CaF2 superlattices. Applied Physics Letters, 79 (13). 2076-2078 doi:10.1063/1.1405004
Travlos, A., Boukos, N., Apostolopoulos, G., Dimoulas, A. (2003) Oxygen vacancy ordering in epitaxial layers of yttrium oxide on Si (001). Applied Physics Letters, 82 (23). 4053-4055 doi:10.1063/1.1581985
Ioannou-Sougleridis, V., Nassiopoulou, A. G. (2009) Dynamic charge transfer effects in two-dimensional silicon nanocrystal layers embedded within SiO2. Journal of Applied Physics, 106 (5). 54508pp. doi:10.1063/1.3211988
Goldenblum, A., Pintilie, I., Buda, M., Popa, A., Lisca, M., Botila, T., Teodorescu, V., Dimoulas, A., Vellianitis, G. (2006) Electrical properties of as-grown molecular beam epitaxy high-k gate dielectrics deposited on silicon. Journal of Applied Physics, 99 (6). 64105pp. doi:10.1063/1.2180428
Ioannou-Sougleridis, V., Nassiopoulou, A. G. (2003) Investigation of charging phenomena in silicon nanocrystal metal–oxide–semiconductor capacitors using ramp current–voltage measurements. Journal of Applied Physics, 94 (6). 4084-4087 doi:10.1063/1.1604459
 
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