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Ouisse, T, Ioannou-Sougleridis, V, Kouvatsos, D, Nassiopoulou, A G (2000) Electrical modelling of Si/SiO2superlattices. Journal of Physics D: Applied Physics, 33. 2691-2698 doi:10.1088/0022-3727/33/21/305

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Reference TypeJournal (article/letter/editorial)
TitleElectrical modelling of Si/SiO2superlattices
JournalJournal of Physics D: Applied Physics
AuthorsOuisse, TAuthor
Ioannou-Sougleridis, VAuthor
Kouvatsos, DAuthor
Nassiopoulou, A GAuthor
Year2000 (November 7)Volume33
PublisherIOP Publishing
DOIdoi:10.1088/0022-3727/33/21/305Search in ResearchGate
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Mindat Ref. ID5668178Long-form Identifiermindat:1:5:5668178:1
GUID0
Full ReferenceOuisse, T, Ioannou-Sougleridis, V, Kouvatsos, D, Nassiopoulou, A G (2000) Electrical modelling of Si/SiO2superlattices. Journal of Physics D: Applied Physics, 33. 2691-2698 doi:10.1088/0022-3727/33/21/305
Plain TextOuisse, T, Ioannou-Sougleridis, V, Kouvatsos, D, Nassiopoulou, A G (2000) Electrical modelling of Si/SiO2superlattices. Journal of Physics D: Applied Physics, 33. 2691-2698 doi:10.1088/0022-3727/33/21/305
In(2000) Journal of Physics D: Applied Physics Vol. 33. IOP Publishing

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Ioannou-Sougleridis, V., Ouisse, T., Nassiopoulou, A. G., Bassani, F., Arnaud d’Avitaya, F. (2001) Nonlinear electrical transport in nc-Si/CaF2 multilayer structures with ultrathin CaF2 layers. Journal of Applied Physics, 89 (1). 610-614 doi:10.1063/1.1330551
Ioannou-Sougleridis, V., Nassiopoulou, A. G., Ouisse, T., Bassani, F., Arnaud d’Avitaya, F. (2001) Electroluminescence from silicon nanocrystals in Si/CaF2 superlattices. Applied Physics Letters, 79 (13). 2076-2078 doi:10.1063/1.1405004
Kouvatsos, D. N., Ioannou-Sougleridis, V., Nassiopoulou, A. G. (2003) Charging effects in silicon nanocrystals within SiO2 layers, fabricated by chemical vapor deposition, oxidation, and annealing. Applied Physics Letters, 82 (3). 397-399 doi:10.1063/1.1537869
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Dimoulas, A., Vellianitis, G., Travlos, A., Ioannou-Sougleridis, V., Nassiopoulou, A. G. (2002) Structural and electrical quality of the high-k dielectric Y2O3 on Si (001): Dependence on growth parameters. Journal of Applied Physics, 92 (1). 426-431 doi:10.1063/1.1483379
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