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Nyamhere, C., Das, M., Auret, F. D., Chawanda, A. (2008) A study of electron induced defects in n-type germanium by deep level transient spectroscopy (DLTS). physica status solidi (c), 5 (2). 623-625 doi:10.1002/pssc.200776812

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Reference TypeJournal (article/letter/editorial)
TitleA study of electron induced defects in n-type germanium by deep level transient spectroscopy (DLTS)
Journalphysica status solidi (c)
AuthorsNyamhere, C.Author
Das, M.Author
Auret, F. D.Author
Chawanda, A.Author
Year2008 (February)Volume5
Issue2
PublisherWiley
DOIdoi:10.1002/pssc.200776812Search in ResearchGate
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Mindat Ref. ID5115511Long-form Identifiermindat:1:5:5115511:1
GUID0
Full ReferenceNyamhere, C., Das, M., Auret, F. D., Chawanda, A. (2008) A study of electron induced defects in n-type germanium by deep level transient spectroscopy (DLTS). physica status solidi (c), 5 (2). 623-625 doi:10.1002/pssc.200776812
Plain TextNyamhere, C., Das, M., Auret, F. D., Chawanda, A. (2008) A study of electron induced defects in n-type germanium by deep level transient spectroscopy (DLTS). physica status solidi (c), 5 (2). 623-625 doi:10.1002/pssc.200776812
In(2008, February) physica status solidi (c) Vol. 5 (2) Wiley

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Nyamhere, Cloud, Auret, F.D., Das, A.G.M., Chawanda, A. (2007) A study of the dependence of electron-induced defects on the doping impurity density in n-type germanium by deep-level transient spectroscopy (DLTS). Physica B: Condensed Matter, 401. 499-502 doi:10.1016/j.physb.2007.09.008
Nyamhere, C., Das, A.G.M., Auret, F.D., Chawanda, A., Pineda-Vargas, C.A., Venter, A. (2011) Deep level transient spectroscopy (DLTS) study of defects introduced in antimony doped Ge by 2MeV proton irradiation. Physica B: Condensed Matter, 406 (15). 3056-3059 doi:10.1016/j.physb.2011.05.005
Nyamhere, C., Das, A.G.M., Auret, F.D., Chawanda, A., Mtangi, W., Odendaal, Q., Carr, A. (2009) Characterization of defects introduced in Sb doped Ge by 3keV Ar sputtering using deep level transient spectroscopy (DLTS) and Laplace-DLTS (LDLTS). Physica B: Condensed Matter, 404 (22). 4379-4381 doi:10.1016/j.physb.2009.09.037
Chawanda, A., Nyamhere, C., Auret, F. D, Mtangi, W., Diale, M., Nel, J. M. (2010) Comparison of metal Schottky contacts on n-Ge (100) at different annealing temperatures. physica status solidi (c), 7 (2). 248-251 doi:10.1002/pssc.200982404
Nyamhere, C, Das, A G M, Auret, F D, C, M Hayes (2008) Deep level transient spectroscopy characterization of defects introduced inp-Si by electron beam deposition and proton irradiation. Journal of Physics: Conference Series, 100. 42004pp. doi:10.1088/1742-6596/100/4/042004
Emiroglu, D., Evans-Freeman, J., Kappers, M. J., McAleese, C., Humphreys, C. J. (2008) High resolution Laplace deep level transient spectroscopy studies of electron and hole traps in n-type GaN. physica status solidi (c), 5 (6). 1482-1484 doi:10.1002/pssc.200778408
Nguyen, T. P., Renaud, C., Rendu, P. Le, Yang, S. H. (2009) Investigation of defects in organic semiconductors by charge based Deep Level Transient Spectroscopy (Q-DLTS). physica status solidi (c), 6 (8). 1856-1861 doi:10.1002/pssc.200881458
Coelho, S. M. M., Auret, F. D., Janse van Rensberg, P. J., Nyamhere, C., Nel, J. M., Hayes, M. (2008) IV and CV measurements of Schottky diodes deposited on Ge by electron beam and sputter deposition. physica status solidi (c), 5 (2). 626-629 doi:10.1002/pssc.200776815
Schindele, David, Pichler, Peter, Lorenz, Jürgen, Oesterlin, Peter, Ryssel, Heiner (2011) Defects formed by pulsed laser annealing: electrical properties and depth profiles in n-type silicon measured by deep level transient spectroscopy. physica status solidi (c), 8 (3). 956-959 doi:10.1002/pssc.201000166
Auret, F D, Nel, M (1991) Detection of near-surface defects in semiconductors by deep-level transient spectroscopy. Measurement Science and Technology, 2. 623-627 doi:10.1088/0957-0233/2/7/008
Aziz, M., Mari, R. H., Felix, J. F., Mesli, A., Taylor, D., Lemine, M. O., Henini, M., Pillai, R., Starikov, D., Boney, C., Bensaoula, A. (2013) Deep level transient spectroscopy characterisation of defects in AlGaN/Si dual-band (UV/IR) detectors grown by MBE. physica status solidi (c), 10 (1). 101-104 doi:10.1002/pssc.201200409
 
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